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IRH7450SE [INFINEON]

TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A); 晶体管N沟道（ BVDSS = 500V ， RDS（ON） = 0.51ohm ，ID = 11A）
IRH7450SE
型号： IRH7450SE
厂家： Infineon    Infineon
描述：

TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)
晶体管N沟道（ BVDSS = 500V ， RDS（ON） = 0.51ohm ，ID = 11A）

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD 9.1390  
IRH7450SE  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET  
Product Summary  
Part Number  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the (SEE) pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality and  
reliability in the industry.  
BVDSS  
RDS(on)  
ID  
IRH7450SE  
500V  
0.51Ω  
11A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRH7450SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
11  
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
7.0  
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
44  
DM  
@ T = 25°C  
P
D
150  
1.2  
W
W/K ꢀ  
V
C
V
±20  
500  
11  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
15  
mJ  
AR  
dv/dt  
3.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
(0.0063 in. (1.6mm) from case for 10 sec.)  
11.5 (typical)  
Lead Temperature  
Weight  
300  
To Order  
 
 
Previous Datasheet  
IRH7450SE Device  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Index  
Next Data Sheet  
Pre-Radiation  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
500  
—
—
—
—
V
V
= 0V, I = 1.0 mA  
D
DSS  
GS  
V/°C Reference to 25°C, I = 1.0 mA  
∆BV  
/∆T  
Temperature Coefficient of Breakdown  
Voltage  
0.6  
DSS  
J
D
R
Static Drain-to-Source  
On-State Resistance  
Gate Threshold Voltage  
ForwardTransconductance  
Zero Gate Voltage Drain Current  
—
—
2.5  
3
—
—
—
—
—
—
—
—
0.51  
0.57  
4.5  
—
50  
250  
V
V
= 12V, I =7.0A  
GS D  
DS(on)  
„
Ω
V
S ( )  
= 12V, I = 11A  
GS D  
V
g
V
V
= V , I = 1.0 mA  
GS(th)  
fs  
DS  
DS  
GS  
D
Ω
> 15V, I  
= 7.0A „  
DS  
I
V
= 0.8 x Max Rating,V  
= 0V  
DSS  
DS GS  
µA  
V
= 0.8 x Max Rating  
DS  
V
= 0V, T = 125°C  
GS  
J
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (“Miller”) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Internal Drain Inductance  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7  
100  
-100  
180  
45  
105  
45  
190  
190  
130  
—
V
= 20V  
GS  
GSS  
nA  
nC  
I
V
GS  
= -20V  
GSS  
Q
Q
Q
V
=12V, I = 11A  
GS D  
V = Max. Rating x 0.5  
DS  
g
gs  
gd  
t
V
= 250V, I =11A,  
d(on)  
DD D  
t
R = 2.35Ω  
G
r
ns  
t
d(off)  
t
f
Measured from the  
Modified MOSFET  
symbol showing the  
internal inductances.  
L
D
S
drain lead, 6mm (0.25  
in.) from package to  
center of die.  
nH  
pF  
Measured from the  
source lead, 6mm  
(0.25 in.) from package  
to source bonding pad.  
L
Internal Source Inductance  
—
8.7  
—
C
C
C
Input Capacitance  
Output Capacitance  
ReverseTransfer Capacitance  
—
—
—
4000  
330  
52  
—
—
—
V
= 0V, V  
DS  
f = 1.0 MHz  
= 25V  
iss  
oss  
rss  
GS  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode)   
—
—
—
—
11  
44  
Modified MOSFET symbol showing the  
integral reverse p-n junction rectifier.  
S
SM  
A
V
t
Q
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
1.6  
1100 ns  
16 µC  
V
T = 25°C, I = 11A, V  
= 0V „  
j
SD  
rr  
RR  
S
GS  
T = 25°C, I =11 A, di/dt ≤ 100A/µs  
j
F
V
≤ 50V „  
DD  
t
ForwardTurn-OnTime  
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
R
R
Junction-to-Case  
Junction-to-Ambient  
—
—
—
—
0.83  
30  
thJC  
thJA  
K/W ꢀ  
R
Case-to-Sink  
—
0.12  
—
Typical Socket Mount  
thCS  
To Order  
Previous Datasheet  
IRH7450SE Device  
Index  
Next Data Sheet  
Radiation Characteristics  
Radiation Performance of Rad Hard HEXFETs  
International Rectifier Radiation Hardened HEX-  
FETs are tested to verify their hardness capability.  
The hardness assurance program at International  
Rectifier uses two radiation environments.  
post-radiation performance are tested and specified  
using the same drive circuitry and test conditions in  
order to provide a direct comparison. It should be  
noted that at a radiation level of 1 x 105 Rads (Si),  
no change in limits are specified in DC parameters.  
Every manufacturing lot is tested in a low dose rate  
(total dose) environment per MlL-STD-750, test  
method 1019. International Rectifier has imposed a  
standard gate voltage of 12 volts per note 6 and a  
High dose rate testing may be done on a special  
request basis, using a dose rate up to 1 x 1012 Rads  
(Si)/Sec.  
V
bias condition equal to 80% of the device  
DSS  
International Rectifier radiation hardened HEXFETs  
have been characterized in neutron and heavy ion  
Single Event Effects (SEE) environments. Single  
Event Effects characterization is shown in Table 3.  
rated voltage per note 7. Pre- and post-radiation  
limits of the devices irradiated to 1 x 105 Rads (Si)  
are identical and are presented in Table 1.The val-  
ues in Table 1 will be met for either of the two low  
dose rate test circuits that are used. Both pre- and  
Table 1. Low Dose Rate † ‡  
IRH7450SE  
Parameter  
100K Rads (Si)  
min.  
Units  
V
Test Conditions Š  
max.  
—
BV  
V
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage „  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
Static Drain-to-Source „  
500  
2.5  
—
V
= 0V, I = 1.0 mA  
GS D  
DSS  
4.5  
V
GS  
= V , I = 1.0 mA  
GS(th)  
DS  
GS  
D
I
100  
-100  
50  
V
= 20V  
GSS  
nA  
I
—
V
= -20V  
GS  
GSS  
I
—
µA  
V
= 0.8 x Max Rating, V  
= 0V  
DSS  
DS  
GS  
R
—
0.51  
Ω
V = 12V, I =7A  
GS  
D
DS(on)1  
On-State Resistance One  
V
SD  
Diode Forward Voltage „  
—
1.6  
V
T
C
= 25°C, I = 11A,V  
= 0V  
GS  
S
Table 2. High Dose Rate ˆ  
1011 Rads (Si)/sec 1012 Rads (Si)/sec  
Parameter  
Drain-to-Source Voltage  
Min. Typ Max. Min. Typ. Max. Units  
Test Conditions  
Applied drain-to-source voltage  
V
DSS  
—
—
400  
—
—
400  
V
during gamma-dot  
I
—
—
27  
8
—
—
—
15  
—
—
—
133  
8
—
—
—
3
—
A
Peak radiation induced photo-current  
PP  
di/dt  
A/µsec Rate of rise of photo-current  
µH Circuit inductance required to limit di/dt  
L
1
Table 3. Single Event Effects ‰  
LET (Si)  
Fluence Range  
V
Bias  
(V)  
400  
V
Bias  
GS  
(V)  
-5  
DS  
Parameter  
Typ.  
500  
Units  
V
Ion  
Ni  
(MeV/mg/cm2) (ions/cm2) (µm)  
28  
1 x 105  
~35  
BV  
DSS  
To Order  
Previous Datasheet  
IRH7450SE Device  
Index  
Next Data Sheet  
Radiation Characteristics  
†Total Dose Irradiation with V  
Bias.  
GS  
= 0 during  
Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
12 volt V  
applied and V  
DS  
GS  
irradiation per MIL-STD-750, method 1019.  
Refer to current HEXFET reliability report.  
‡Total Dose Irradiation withV Bias.  
‚@ V  
= 50V, Starting T = 25°C,  
J
DS  
(pre-radiation)  
DD  
= [0.5  
E
L
(I 2) [BV  
/(BV -V )]  
DSS DSS DD  
V
= 0.8 rated BV  
DS  
applied and V  
DSS  
= 0 during irradiation per  
AS  
*
*
*
L
Peak I = 11A, V  
= 12V, 25 ≤ R ≤ 200Ω  
GS  
MlL-STD-750, method 1019.  
L
GS  
G
ƒI  
SD  
≤ 11A, di/dt ≤ 130 A/µs,  
ˆThis test is performed using a flash x-ray  
source operated in the e-beam mode (energy  
~2.5 MeV), 30 nsec pulse.  
V
≤ BV , T ≤ 150°C  
DD  
DSS  
J
Suggested RG = 2.35Ω  
„Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
‰Process characterized by independent laboratory.  
ꢀK/W = °C/W  
ŠAll Pre-Radiation and Post-Radiation test  
conditions are identical to facilitate direct  
comparison for circuit applications.  
W/K = W/°C  
Case Outline and Dimensions — TO-204AA (Modified TO-3)  
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371  
http://www.irf.com/  
Data and specifications subject to change without notice.  
4/96  
To Order  

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