IRH9250PBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3;型号: | IRH9250PBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
文件: | 总4页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1392
IRH9250
AVALANCHE ENERGY AND dv/dt RATED
HEXFET® TRANSISTOR
P-CHANNEL
RAD HARD
Product Summary
-200 Volt, 0.315Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retainidenticalelectrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
Part Number
IRH9250
BVDSS
-200V
RDS(on)
ID
0.315Ω
-14A
Features:
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
patented HEXFET technology, the user can expect the n Identical Pre- and Post-Electrical Test Conditions
highest quality and reliability in the industry.
n
n
n
n
n
n
n
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRH9250
-14
Units
I
D
@ V
= -12V, T = 25°C Continuous Drain Current
GS C
I
@ V
= -12V, T = 100°C Continuous Drain Current
C
-9
A
D
GS
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
-56
DM
@ T = 25°C
P
150
W
W/K ꢀ
V
D
C
1.2
V
±20
GS
E
Single Pulse Avalanche Energy
Avalanche Current
500
mJ
AS
I
-14
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
15
mJ
AR
dv/dt
-5.5
V/ns
T
-55 to 150
J
oC
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. (1 .6mm) from case for 10s)
11.5 (typical)
g
Notes: See page 4
To Order
Previous Datasheet
IRH9250 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Index
Next Data Sheet
Pre-Radiation
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0 mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
-0.10
DSS
J
D
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
-2.0
4.0
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
-25
-250
V
= -12V, I = -9A
D
DS(on)
GS
V = -12V, I = -14A
GS
Ω
V
S ( )
D
V
g
V
V
=V , I = -1.0 mA
GS(th)
fs
DS
DS
GS
D
Ω
> -15V, I
= -9A
DS
I
V
= 0.8 x Max. Rating,V = 0V
= 0.8 x Max. Rating
DS
DSS
DS
GS
µA
—
V
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
200
45
85
60
240
225
175
—
V
V
= - 20V
= 20V
GSS
GS
GS
nA
nC
I
GSS
Q
Q
Q
V
= -12V, I = -14A
GS D
V = Max. Rating x 0.5
DS
g
gs
gd
t
V
DD
= -50V, I = -14A, R = 2.35Ω
d(on)
D
G
t
r
ns
t
d(off)
t
f
L
Measured from the
D
S
Modified MOSFET
symbol showing the
internal inductances.
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
pF
L
Internal Source Inductance
—
8.7
—
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
1100
310
55
—
—
—
V
= 0V, V
= -25V
f = 1.0 MHz
iss
oss
rss
GS DS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current
(Body Diode)
Pulse Source Current
—
—
—
—
-14
-56
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
S
A
SM
(Body Diode) ➀
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ForwardTurn-OnTime
—
—
—
—
—
—
-3.6
740
7.0
V
ns
µC
T = 25°C, I = -14A,V
= 0V
GS
j
SD
rr
RR
S
T = 25°C, I = -14A, di/dt ≤ -100 A/µs
j
F
V
≤ -14V
DD
t
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
on
S D
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.12
0.83
30 K/Wꢀ
—
thJC
thJA
RthCS
Typical socket mount
Notes: See page 4
To Order
Previous Datasheet
IRH9250 Device
Index
Next Data Sheet
Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at International Rectifier uses two
radiation environments.
Both pre- and post-radiation performance are tested and
specified using the same drive circuitry and test conditions
in order to provide a direct comparison. It should be noted
that at a radiation level of 1 x 105 Rads (Si), no change in
limits are specified in DC parameters.
Every manufacturing lot is tested in a low dose rate (total
dose) environment per MlL-STD-750, test method 1019.
International Rectifier has imposed a standard gate voltage
High dose rate testing may be done on a special request
basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec.
of -12 volts per note 6 and a V
bias condition equal to
DSS
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier P-
Channel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects environment
80% of the device rated voltage per note 7. Pre- and post-
radiation limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1. The values in
Table 1 will be met for either of the two low dose rate test
circuits that are used.
and the results are shown in Table 3.
IRH9250
100K Rads (Si)
Table 1. Low Dose Rate
Min.
Max.
Parameter
Units
V
Test Conditions
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage -200
—
-4.0
-100
100
VGS = 0V, ID = -1.0 mA
VGS = VDS, ID = -1.0 mA
VGS = -20V
Gate Threshold Voltage
-2.0
—
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
nA
IGSS
—
VGS = 20V
IDSS
—
-25
µA
VDS = 0.8 x Max Rating, VGS = 0V
VGS = -12V, ID = -9A
RDS(on)➀
—
0.315
Ω
On-State Resistance One
VSD
Diode ForwardVoltage
—
-3.6
V
TC = 25°C, IS = -14A,VGS = 0V
Test Conditions
Table 2. High Dose Rate
1011 Rads (Si)/sec1012 Rads (Si)/sec
Min. Typ Max. Min.Typ. Max.
Parameter
Units
V
V
DSS
Drain-to-Source Voltage
—
—
-160
—
—
-160
Applied drain-to-source voltage
during gamma-dot
I
—
—
27
-100
—
—
—
-800
—
—
—
0.5
-100
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
-160 A/µsec Rate of rise of photo-current
L
µH
Circuit inductance required to limit di/dt
1
Table 3. Single Event Effects
LET (Si)
Fluence Range
V
Bias
(V)
-200
V
Bias
GS
(V)
DS
Parameter
Typ.
-200
Units
V
Ion
Ni
(MeV/mg/cm2) (ion/cm2)
(µm)
BV
28
1 x 105
~41
5
DSS
To Order
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IRH9250 Device
Index
Next Data Sheet
Radiation Characteristics
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
Total Dose Irradiation withV
Bias.
GS
= 0 during
-12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019.
DS
@ V
DD
= -25V, Starting T = 25°C,
Total Dose Irradiation withV
Bias.
(pre-radiation)
J
DS
E
= [0.5
L
(I2
)
[BV
/(BV
-V )]
V
= 0.8 rated BV
AS
*
*
L
*
DSS
DSS DD
DS DSS
applied and V = 0 during irradiation per
GS
Peak I = -14A, V
= -12V, 25 ≤ R ≤ 200Ω
L
GS
G
MlL-STD-750, method 1019.
I
≤ -14A, di/dt ≤ -140 A/µs,
SD
V
≤ BV
, T ≤ 150°C
J
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
DD
DSS
Suggested R = 2.35ý
G
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Process characterized by independent laboratory.
ꢀK/W = °C/W
W/K = W/°C
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions
Conforms to JEDEC OutlineTO-204AA (ModifiedTO-3)
Dimensions in Millimeters and (Inches)
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
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