IRHD320CW40 [INFINEON]
Rectifier Diode, 1 Phase, 2 Element, 410A, 400V V(RRM), Silicon, TO-244AB, LEAD FREE, TO-244, 2 PIN;
| 型号： | IRHD320CW40 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 410A, 400V V(RRM), Silicon, TO-244AB, LEAD FREE, TO-244, 2 PIN 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20037 04/05
IRHD320CW40
Ultrafast, Soft Recovery Diode
HEXFRED TM
LUG
LUG
Features
VR = 400V
VF(typ.)e = 1V
IF(AV) = 320A
Qrr (typ.) = 420nC
IRRM(typ.)= 8.7A
trr(typ.) = 45ns
TERMINAL
ANODE 1
TERMINAL
ANODE 2
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
di(rec)M/dt (typ.)e = 280A/µs
BASE COMMON CATHODE
Description/ Applications
HEXFREDTM diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameters
Cathode-to-Anode Voltage
Max
400
Units
V
VR
IF @ TC = 25°C
Continuous Forward Current
321
A
IF @ TC = 100°C Continuous Forward Current
160
IFSM
EAS
Single Pulse Forward Current c
Non-Repetitive Avalanche Energy d
1200
1.4
625
mJ
W
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
250
TJ, TSTG
Operating Junction and Storage Temperature Range
- 55 to 150
°C
Case Styles
IRHD320CW40
TO-244
c
Limited by junction temperature
L = 100µH, duty cycle limited by max T
125°C
d
e
J
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1
IRHD320CW40
Bulletin PD-20037 04/05
Electrical Characteristics (per Leg) @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VBR
VFM
Cathode Anode
Breakdown Voltage,
400
-
-
V
IR = 100µA
Max. Forward Voltage
-
-
-
-
-
-
-
1.10 1.35
1.30 1.55
1.00 1.20
V
V
IF = 160A
IF = 320A
See Fig. 1
V
IF = 160A, TJ = 125°C
VR = VR Rated
TJ = 125°C, VR = 320V
VR = 200V
IRM
Max. Reverse Leakage Current
2.0
3.0
12
16
µA
µA
pF
nH
See Fig. 2
See Fig. 3
CT
LS
Junction Capacitance
Series Inductance
370 500
5.0
-
From top of terminal hole. to mounting plane
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
trr
Reverse Recovery Time
-
-
-
-
-
-
-
-
-
45
-
ns
IF = 1.0A, diF/dt = 200A/µs, VR = 30V
trr1
90 140
290 440
8.7 20
TJ = 25°C
See Fig. 5
trr2
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 160A
VR = 200V
diF /dt = 200A/µs
IRRM1
IRRM2
Qrr1
Peak Recovery Current
A
See Fig. 6
18
30
Reverse Recovery Charge
420 1100 nC
2600 7000
See Fig. 7
See Fig. 8
Qrr2
di(rec)M /d/t1
di(rec)M /d/t2
300
280
-
-
A/µs TJ = 25°C
TJ = 25°C
Thermal - Mechanical Characteristics
Parameters
Min
Typ
-
-
-
Max
- 55 to 150
- 55 to 150
0.24
Units
°C
TJ
TStg
RthJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
-
-
-
Per Leg
°C/W
K/W
Per Module
-
-
-
-
0.12
-
-
RthCS
Wt
0.10
68 (2.4)
g (oz)
lbf.in
Mounting Torque (*)
30 (3.4)
12 (1.4)
30 (3.4)
-
-
-
-
-
-
40 (4.6)
18 (2.1)
40 4.6)
80
Mounting Torque Center Hole
Terminal Torque
(N.m)
Vertical Pull
lbf.in
2 inch Lever Pull
-
35
(*) Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to
mounting surface. Gradually tighten each mounting bolt in 5-10lbf.in steps until desired or maximum torque limits are reached
2
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IRHD320CW40
Bulletin PD-20037 04/05
100000
10000
1000
100
T = 150°C
J
1000
100
10
T = 125°C
J
10
T = 25°C
J
1
T = 150°C
J
0.1
T = 125°C
J
0
100
200
300
400
Reverse Voltage - V (V)
R
T = 25°C
J
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
A
10000
1000
100
T = 25°C
J
1
0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V
(V)
FM
1
10
100
1000
Reverse Voltage - V (V)
R
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current (per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
1
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
P
DM
t
1
t
D = 0.08
2
Notes:
1. Duty factor D = t / t
1
2
Single Pulse
(Thermal Resistance)
2. Peak T = P
J
x Z
+ T
thJC
C
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, (per Leg)
3
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IRHD320CW40
Bulletin PD-20037 04/05
500
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
= 200A
F
I
= 200A
F
I
= 160A
F
I
= 160A
300
200
100
I
= 70A
F
F
I
= 70A
F
0
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 5 - Typical Reverse Recovery vs. di /dt,
f
Fig. 6 - Typical Recovery Current vs. di /dt,
f
(per Leg)
(per Leg)
6000
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 200A
F
4000
2000
0
I
= 160A
F
I
= 70A
F
I
= 70A
F
1000
I
= 160A
F
I
= 200A
F
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. di /dt,
f
Fig. 8 - Typical di(rec)M/dt vs. di /dt,
f
(per Leg)
(per Leg)
4
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IRHD320CW40
Bulletin PD-20037 04/05
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
di F /dt
dif/dt
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75 I
RRM
1
di /dt
di F/dt
1. di /dt - Rate of change of current through zero
F
4. Qrr - Area under curve defined by t
rr
crossing
and I
RRM
t
x I
2
rr
RRM
Q
=
rr
2. I
- Peak reverse recovery current
RRM
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
(rec) M
rr
crossing point of negative going I to point where
current during t portion of t
b rr
F
RRM
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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IRHD320CW40
Bulletin PD-20037 04/05
I
L(PK)
L = 100µH
HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
Rg = 25 ohm
DIODE
+
CURRENT
MONITOR
DECAY
TIME
Vd = 50V
V
(AVAL)
V
R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
Outline Table
Conforms to JEDEC Outline TO-244
Dimensions in millimeters and (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04/05
6
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