IRH9250 [INFINEON]

TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A); 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.315ohm ，ID = -14A ）


型号：	IRH9250
厂家：	Infineon
描述：	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.315ohm ，ID = -14A ）晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：115K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1392

IRH9250

AVALANCHE ENERGY AND dv/dt RATED

HEXFET^®TRANSISTOR

P-CHANNEL

RAD HARD

Product Summary

-200 Volt, 0.315Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Under identical pre- and post-

radiation test conditions, International Rectifier’s P-Channel

RAD HARD HEXFETs retainidenticalelectrical specifications

up to 1 x 10⁵Rads (Si) total dose. No compensation in gate

drive circuitry is required. These devices are also capable

of surviving transient ionization pulses as high as 1 x 10¹²

Rads (Si)/Sec, and return to normal operation within a few

microseconds. Single Event Effect (SEE) testing of

International Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the P-

Channel RAD HARD process utilizes International Rectifier’s

Part Number

IRH9250

BV_DSS

-200V

R_DS(on)

I_D

0.315Ω

-14A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

patented HEXFET technology, the user can expect the n Identical Pre- and Post-Electrical Test Conditions

highest quality and reliability in the industry.

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control,very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high-energy pulse circuits in space and

weapons environments.

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRH9250

-14

Units

@ V

= -12V, T = 25°C Continuous Drain Current

GS C

@ V

= -12V, T = 100°C Continuous Drain Current

-9

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-56

@ T = 25°C

150

W/K ꢀ

1.2

±20

Single Pulse Avalanche Energy

Avalanche Current

500

-14

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

-5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1 .6mm) from case for 10s)

11.5 (typical)

Notes: See page 4

To Order

Previous Datasheet

IRH9250 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Index

Next Data Sheet

Pre-Radiation

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

-200

—

= 0V, I = -1.0 mA

DSS

V/°C Reference to 25°C, I = -1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.10

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

-2.0

4.0

—

0.315

0.33

-4.0

—

-25

-250

= -12V, I = -9A

DS(on)

V = -12V, I = -14A

Ω

S ( )

=V , I = -1.0 mA

GS(th)

Ω

> -15V, I

= -9A

= 0.8 x Max. Rating,V = 0V

= 0.8 x Max. Rating

DSS

µA

—

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

8.7

-100

100

200

240

225

175

—

= - 20V

= 20V

GSS

= -12V, I = -14A

GS D

V = Max. Rating x 0.5

= -50V, I = -14A, R = 2.35Ω

d(on)

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Internal Source Inductance

—

8.7

—

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Input Capacitance

Output Capacitance

ReverseTransfer Capacitance

—

1100

310

—

= 0V, V

= -25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current

(Body Diode)

Pulse Source Current

—

-14

-56

Modified MOSFET symbol

showing the integral Reverse

p-n junction rectifier.

(Body Diode) ➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

ForwardTurn-OnTime

—

-3.6

740

7.0

µC

T = 25°C, I = -14A,V

= 0V

T = 25°C, I = -14A, di/dt ≤ -100 A/µs

≤ -14V

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

0.12

0.83

30 K/Wꢀ

—

thJC

thJA

RthCS

Typical socket mount

Notes: See page 4

To Order

Previous Datasheet

IRH9250 Device

Index

Next Data Sheet

Radiation Characteristics

Radiation Performance of P-Channel Rad

Hard HEXFETs

International Rectifier Radiation Hardened HEXFETs are

tested to verify their hardness capability. The hardness

assurance program at International Rectifier uses two

radiation environments.

Both pre- and post-radiation performance are tested and

specified using the same drive circuitry and test conditions

in order to provide a direct comparison. It should be noted

that at a radiation level of 1 x 10⁵Rads (Si), no change in

limits are specified in DC parameters.

Every manufacturing lot is tested in a low dose rate (total

dose) environment per MlL-STD-750, test method 1019.

International Rectifier has imposed a standard gate voltage

High dose rate testing may be done on a special request

basis, using a dose rate up to 1 x 10¹²Rads (Si)/Sec.

of -12 volts per note 6 and a V

bias condition equal to

DSS

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as stated

in MIL-PRF-19500 Group D. International Rectifier P-

Channel radiation hardened HEXFETs have been

characterized in heavy ion Single Event Effects environment

80% of the device rated voltage per note 7. Pre- and post-

radiation limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1. The values in

Table 1 will be met for either of the two low dose rate test

circuits that are used.

and the results are shown in Table 3.

IRH9250

100K Rads (Si)

Table 1. Low Dose Rate

Min.

Max.

Parameter

Units

Test Conditions

BVDSS

VGS(th)

IGSS

Drain-to-Source Breakdown Voltage -200

—

-4.0

-100

100

VGS = 0V, ID = -1.0 mA

VGS = VDS, ID = -1.0 mA

VGS = -20V

Gate Threshold Voltage

-2.0

—

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

IGSS

—

VGS = 20V

IDSS

—

-25

µA

VDS = 0.8 x Max Rating, VGS = 0V

VGS = -12V, ID = -9A

RDS(on)➀

—

0.315

Ω

On-State Resistance One

VSD

Diode ForwardVoltage

—

-3.6

TC = 25°C, IS = -14A,VGS = 0V

Test Conditions

Table 2. High Dose Rate

10¹¹Rads (Si)/sec10¹²Rads (Si)/sec

Min. Typ Max. Min.Typ. Max.

Parameter

Units

DSS

Drain-to-Source Voltage

—

-160

—

-160

Applied drain-to-source voltage

during gamma-dot

—

-100

—

-800

—

0.5

-100

—

Peak radiation induced photo-current

di/dt

-160 A/µsec Rate of rise of photo-current

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

-200

Bias

(V)

Parameter

Typ.

-200

Units

Ion

(MeV/mg/cm²) (ion/cm²)

(µm)

1 x 10⁵

~41

DSS

To Order

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IRH9250 Device

Index

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Radiation Characteristics

Repetitive Rating; Pulse width limited by

maximum junction temperature.

Refer to current HEXFET reliability report.

Total Dose Irradiation withV

Bias.

= 0 during

-12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

@ V

= -25V, Starting T = 25°C,

Total Dose Irradiation withV

Bias.

(pre-radiation)

= [0.5

(I²

)

[BV

/(BV

-V )]

= 0.8 rated BV

DSS

DSS DD

DS DSS

applied and V = 0 during irradiation per

Peak I = -14A, V

= -12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

≤ -14A, di/dt ≤ -140 A/µs,

≤ BV

, T ≤ 150°C

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

DSS

Suggested R = 2.35ý

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

W/K = W/°C

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions

Conforms to JEDEC OutlineTO-204AA (ModifiedTO-3)

Dimensions in Millimeters and (Inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

To Order

IRH9250 [INFINEON]

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