IRHE9130SCSPBF [INFINEON]
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18;
| 型号： | IRHE9130SCSPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90881C
IRHE9130
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™ HEXFET®
MOSFETTECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHE9130
100K Rads (Si)
300K Rads (Si)
0.30Ω
0.30Ω
-6.5A JANSR2N7389U
-6.5A JANSF2N7389U
IRHE93130
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
LCC - 18
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
-6.5
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
-4.1
-26
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
Linear Derating Factor
0.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
165
mJ
A
AS
I
-6.5
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
-22
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s)
0.42 (Typical)
For footnotes refer to the last page
www.irf.com
1
2/20/03
IRHE9130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
=0 V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.112
DSS
J
D
Voltage
R
V
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
—
—
—
—
—
—
0.30
0.35
-4.0
—
V
V
= -12V, I = -4.1A
D
DS(on)
GS
Ω
= -12V, I = -6.5A
GS
D
-2.0
2.5
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> -15V, I
= -4.1A
DS
DS
I
-25
V
= -80V,V =0V
DS GS
DSS
µA
—
-250
V
= -80V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
45
V
= -20V
GSS
GS
nA
nC
V
= 20V
GSS
GS
Q
Q
Q
V
= -12V, I = -6.5A
g
gs
gd
d(on)
r
GS D
10
V
= -50V
DS
25
t
t
t
t
30
V
= -50V, I = -6.5A,
DD
GS
D
50
V
= -12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
70
d(off)
70
—
f
L
L
S +
D
Measured from the center of
drain pad to center of source pad
nH
C
C
C
Input Capacitance
—
—
—
1200
290
76
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-6.5
-26
S
A
SM
V
-3.0
250
0.74 µC
V
T = 25°C, I = -6.5A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
T = 25°C, I = -6.5A, di/dt ≤ -100A/µs
j
rr
RR
F
V
≤ -25V ➀
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
5.0
—
thJC
°C/W
Junction-to-PC Board
19
Solder to a copper clad PC Board
thJPCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHE9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
- 2.0
—
—
-100
-2.0
—
—
-5.0
-100
100
V
= 0V, I = -1.0mA
DSS
GS D
V
V
- 4.0
-100
100
V = V , I = -1.0mA
GS
DS D
GS(th)
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
—
—
V
GS
GSS
I
—
-25
—
-25
µA
V
=-80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (LCC-18)
Diode Forward Voltage
➀
—
0.259
—
0.259
Ω
V
= -12V, I =-4.1A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.30
-3.0
—
—
0.30
-3.0
Ω
V
= -12V, I =-4.1A
D
GS
V
SD
➀
V
V
= 0V, I = -6.5A
GS S
1. Part number IRHE9130 (JANSR2N7389U)
2. Part number IRHE93130 (JANSF2N7389U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Energy
Range
VDS(V)
(MeV)
285
305
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
43
39
32.6
Cu
Br
I
28
36.8
59.8
-100
-100
-60
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
343
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE9130
Pre-Irradiation
100
100
10
1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
-6.5A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
10
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
1
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHE9130
2000
20
16
12
8
V
= 0V,
f = 1MHz
C
GS
I = -6.5
D
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
V
V
V
=-80V
=-50V
=-20V
rss
DS
DS
DS
C
= C + C
oss
ds
1500
1000
500
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
°
T = 150 C
J
1ms
1
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
1.0
1.8
2.6
3.4
4.2
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHE9130
Pre-Irradiation
RD
7.0
6.0
5.0
4.0
3.0
2.0
1.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHE9130
L
V
D S
400
300
200
100
0
I
D
TOP
-2.9A
-4.1A
D .U .T
R
G
V
D D
A
BOTTOM -6.5A
I
A S
D R IV ER
-20V
VGS
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHE9130
Pre-Irradiation
Footnotes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -25V, starting T = 25°C, L= 7.8mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = -6.5A, V
= -12V
GS
L
➀ Total Dose Irradiation with V
Bias.
➀ I
≤ -6.5A, di/dt ≤ -430A/µs,
DS
applied and V = 0 during
GS
SD
DD
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — LCC-18
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Data and specifications subject to change without notice. 02/03
8
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