IRHE93110 [INFINEON]
POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18); POWER MOSFET 100V - P沟道表面贴装（ LCC- 18 ）
| 型号： | IRHE93110 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97180
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
IRHE9110
100V - P CHANNEL
TM
RAD-Hard HEXFET TECHNOLOGY
®
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHE9110
100K Rads (Si)
300K Rads (Si)
1.1Ω
1.1Ω
-2.3A
-2.3A
IRHE93110
LCC - 18
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T =25°C Continuous Drain Current
-2.3
-1.5
D
D
GS
GS
C
A
I
= -12V, T =100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
-9.2
DM
@ T = 25°C
P
D
15
W
W/°C
V
C
0.1
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
75
mJ
A
AS
I
-2.3
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
1.5
mJ
V/ns
AR
dv/dt
-12.5
-55 to 150
T
J
T
Storage Temperature Range
°C
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.42 (Typical)
For footnotes refer to the last page
www.irf.com
1
07/11/07
IRHE9110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.094
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.1
Ω
V = -12V, I = -1.5A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
0.7
—
—
—
—
—
-4.0
—
-25
-250
V
S ( )
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
V
DS
= -15V, I
= -1.5A Ã
DS
I
V
= -80V ,V =0V
DSS
DS GS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
16
4.3
3.3
21
17
32
32
—
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -2.3A
g
gs
gd
d(on)
r
GS D
V
= -50V
DS
t
t
t
t
V
= -50V, I = -2.3A,
= -12V, R = 7.5Ω
DD
GS
D
G
V
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
290
94
13
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
f = 1.0MHz, open drain
R
g
Internal Gate Resistance
Ω
20.5
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-2.3
-9.2
2.6
138
520
S
SM
SD
rr
A
V
nS
nC
T = 25°C, I = -2.3A, V
= 0V Ã
j
S
GS
T = 25°C, I = -2.3A, di/dt ≤ -100A/µs
j
F
V
Q
≤ -25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
RthJA
Junction-to-Case
Junction-to-PC Board
Junction-to-Air
—
—
—
19
8.3
—
75
thJC
thJPCB
°C/W
Solder to a copper clad PC Board
Typical Socket
For footnotes refer to the last page
2
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Radiation Characteristics
IRHE9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
1
Parameter
100K Rads(Si)
Min
300K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage -100
—
- 4.0
-100
100
-25
-100
-2.0
—
—
—
—
-5.0
-100
100
-25
V
= 0V, I = -1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
- 2.0
—
—
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
V
GS
nA
GSS
I
—
µA
Ω
V
= -80V, V = 0V
GS
= -12V, I = -1.5A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Diode Forward Voltage
Ã
—
1.06
—
1.06
V
V
SD
Ã
—
-2.6
—
-2.6
V
V
= 0V, I = -2.3A
GS S
1. Part number IRHE9110
2. Part number IRHE93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Energy
Range
VDS(V)
(MeV)
285
305
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
43
39
32.6
Cu
Br
I
28
36.8
59.8
-100
-100
-60
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
343
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE9110
Pre-Irradiation
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
BOTTOM -5.0V
BOTTOM -5.0V
1
-5.0V
1
-5.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
I
= -2.3A
D
T
= 25°C
J
T
= 150°C
J
V
= -50V
DS
60µs PULSE WIDTH
V
= -12V
GS
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10 11 12 13 14 15
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHE9110
500
20
16
12
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= -80V
= -50V
= -20V
I
= -2.3A
DS
DS
DS
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
400
300
200
100
0
= C + C
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
2
4
6
8
10
12
14
-V , Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
1
0.1
100µs
T
= 25°C
J
1ms
Tc = 25°C
Tj = 150°C
10ms
V
GS
= 0V
3.5
Single Pulse
0.1
0.01
1
10
100
1000
0
0.5
-V
1
1.5
2
2.5
3
4
-V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHE9110
Pre-Irradiation
RD
2.5
2
VDS
VGS
D.U.T.
RG
-
+
VDD
1.5
1
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0.5
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
1
P
0.05
0.02
0.01
DM
SINGLE PULSE
( THERMAL RESPONSE )
t
1
t
2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHE9110
L
V
DS
180
160
140
120
100
80
I
D
D.U.T
AS
R
G
V
DD
A
TOP
BOTTOM
-1.0A
-1.5A
-2.3A
I
DRIVER
-V20GVS
0.01
Ω
t
p
15V
60
Fig 12a. Unclamped Inductive Test Circuit
40
20
0
I
AS
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHE9110
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12volt V
applied and V
Á V
= -25V, starting T = 25°C, L= 28mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -2.3A, V
= -12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ -2.3A, di/dt ≤ -540A/µs,
DS
= 0 during
-80volt V
applied and V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
DD
J
Case Outline and Dimensions — LCC-18
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Data and specifications subject to change without notice. 07/2007
8
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