IRHF53034SCS [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHF53034SCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93791E
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
REF: MIL-PRF-19500/701
R
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7492T2
JANSF2N7492T2
JANSG2N7492T2
JANSH2N7492T2
IRHF57034
IRHF53034
IRHF55034
IRHF58034
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
12A*
12A*
12A*
12A*
0.048
0.048
0.048
0.060
Features
Single Event Effect (SEE) Hardened
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching and temperature
stability of electrical parameters.
Ultra Low RDS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
12*
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
9.5
48
A
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
25
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
0.2
± 20
270
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
mJ
A
IAR
EAR
Avalanche Current
12
2.5
9.6
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
dv/dt
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
For Footnotes, refer to the page 2.
1
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Min. Typ. Max. Units
60 ––– –––
Test Conditions
VGS = 0V, ID = 1.0mA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
BVDSS/TJ
RDS(on)
––– 0.062 –––
––– ––– 0.048
V/°C Reference to 25°C, ID = 1.0mA
VGS = 12V, ID2 = 9.5A
V
VGS(th)
2.0
12
–––
4.0
VDS = VGS, ID = 1.0mA
Gfs
IDSS
Forward Transconductance
––– –––
S
V
DS = 15V, ID2 = 9.5A
VDS = 48V, VGS = 0V
DS = 48V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
––– –––
––– –––
––– ––– 100
––– ––– -100
10
25
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
––– –––
––– –––
––– –––
––– –––
––– ––– 100
––– –––
––– –––
40
10
15
25
ID1 = 12A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
ns
VDS = 30V
V
GS = 12V
VDD = 30V
D1 = 12A
RG = 7.5
GS = 12V
I
td(off)
tf
35
30
V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1160 –––
––– 530 –––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
18
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– 12*
A
ISM
––– –––
––– –––
48
VSD
trr
1.5
V
TJ = 25°C,IS = 12A, VGS = 0V
Reverse Recovery Time
––– ––– 100
––– ––– 300
ns TJ = 25°C, IF = 12A, VDD ≤ 25V
nC di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
5.0
RJC
RJA
°C/W
Junction-to-Ambient (Typical Socket Mount)
–––
–––
175
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 3.74mH, Peak IL = 12A, VGS = 12V
ISD 12A, di/dt 244A/µs, VDD 60V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 500 kRads (Si)1 1000 kRads (Si)2
Symbol
Parameter
Units
Test Conditions
Min.
60
Max.
–––
4.0
Min.
60
Max.
–––
4.0
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
2.0
1.5
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
–––
–––
–––
100
-100
10
–––
–––
–––
100
-100
25
nA
nA
µA
IGSS
VGS = -20V
IDSS
VDS = 48V, VGS = 0V
RDS(on)
–––
0.034
–––
0.043
VGS = 12V, ID2 = 9.5A
On-State Resistance (TO-3)
Static Drain-to-Source
RDS(on)
VSD
–––
–––
0.048
1.5
–––
–––
0.060
1.5
VGS = 12V, ID2 = 9.5A
VGS = 0V, IS = 12A
On-State Resistance (TO-39)
Diode Forward Voltage
V
1. Part numbers IRHF57034 (JANSR2N7492T2), IRHF53034 (JANSF2N7492T2) and IRHF55034 (JANSG2N7492T2)
2. Part numbers IRHF58034 (JANSH2N7492T2)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
@ VGS =
0V
@ VGS =
-5V
@ VGS =
-10V
@ VGS =
-15V
@ VGS =
-20V
(MeV/(mg/cm2))
38 ± 5%
61 ± 5%
84 ± 5%
300 ± 7.5%
330 ± 7.5%
350 ± 10%
38 ± 7.5%
31 ± 10%
28 ± 7.5%
60
46
35
60
46
30
60
35
25
60
25
20
30
15
14
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Pre-Irradiation
1000
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
1000
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
1
1
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
0.0
12A
=
I
D
°
T = 25 C
J
100
10
1
°
T = 150 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=12V
GS
5
7
9
11 13 15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
2500
2000
1500
1000
500
20
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 12A
D
GS
C
= C + C
V
V
V
= 48V
= 30V
= 12V
iss
gs
gd ,
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
16
12
8
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
100
0
10
20
30 40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Pre-Irradiation
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED BY R (on)
DS
100 s
1ms
°
T = 150 C
J
10ms
DC
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
2.5
0.1
0.0
0.1
0.5
V
1.0
1.5
2.0
3.0
1
10
, Drain-to-Source Voltage (V)
100
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
600
500
400
300
200
100
0
16
I
D
LIMITED BY PACKAGE
TOP
5.4A
7.6A
12A
BOTTOM
12
8
4
0
25
50
75
100
125
150
25
50
T
75
100
125
°
150
°
Starting T , Junction Temperature ( C)
, Case Temperature ( C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
DM
0.1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Dutyfactor D =
t / t
1
2
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Pre-Irradiation
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
2018-10-26
6
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7
2018-10-26
International Rectifier HiRel Products, Inc.
IRHF57034
JANSR2N7492T2
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
2018-10-26
International Rectifier HiRel Products, Inc.
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