IRHF593130 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39); 抗辐射功率MOSFET直通孔（ TO- 39 ）
| 型号： | IRHF593130 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
| 文件： | 总8页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-96963
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF597130
100V, P-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF597130 100K Rads (Si)
IRHF593130 300K Rads (Si)
0.24Ω -6.7A
0.24Ω -6.7A
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T =25°C Continuous Drain Current
-6.7
D
D
GS
GS
C
A
I
= -12V, T =100°C Continuous Drain Current
-4.3
-26.8
25
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
240
mJ
A
AS
I
-6.7
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
-17
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in./1.6 mm from case for 10s)
0.98 (Typical )
For footnotes refer to the last page
www.irf.com
1
09/26/05
IRHF597130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.13
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.24
Ω
V
= -12V, I = -4.3A Ã
GS D
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
4.3
—
—
—
—
—
-4.0
—
-10
-25
V
S ( )
V
V
V
= V , I = -1.0mA
GS(th)
fs
DS
DS
DS
GS
D
Ω
= -15V, I
= -4.3A Ã
DS
I
= -80V ,V
= 0V
DSS
GS
= -80V,
µA
—
V
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
40
16
11
25
50
45
125
—
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-12V, I = -6.7A
V
g
gs
gd
d(on)
r
GS
D
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -6.7A
=-12V, R = 7.5Ω
GS G
D
ns
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
nH
S
D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1250
318
28
—
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
8.0
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-6.7
-26.8
-5.0
150
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -6.7A, V
= 0V Ã
j
S
GS
T = 25°C, I = -6.7A, di/dt ≤ -100A/µs
j
F
V
408
≤ -50V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
5.0
175
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHF597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1
Min Max
300KRads(Si)2 Units
Min Max
Test Conditions
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-100
-2.0
—
—
—
—
-4.0
-100
100
-100
-2.0
—
—
—
—
V
V
= 0V, I = -1.0mA
DSS
GS D
V
V
-4.0
-100
100
= V , I = -1.0mA
GS
GS(th)
DS
D
I
I
V
V
=-20V
= 20 V
GSS
GS
nA
GSS
GS
I
-10
-10
µA
V
= -80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
Ã
—
0.205
—
0.205
Ω
V
= -12V, I = -4.3A
D
GS
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance(TO-39)
R
—
—
0.24
-5.0
—
—
0.24
-5.0
Ω
V
= -12V, I = -4.3A
D
GS
DS(on)
V
SD
Diode Forward Voltage
Ã
V
V
= 0V, I = -6.7A
GS S
1. Part number IRHF597130
2. Part number IRHF593130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
@VGS=20V
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br
I
Au
33.1
30.5
28.4
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-100
-25
59.7
82.3
350
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHF597130
Pre-Irradiation
100
100
10
1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
10
-5.0V
-5.0V
BOTTOM -5.0V
BOTTOM -5.0V
1
µ
µ
60 s PULSE WIDTH
Tj = 25°C
60 s PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
100
10
1
I
= -6.7A
D
T
= 25°C
J
T
= 150°C
J
V
= -25V
DS
60µs PULSE WIDTH
V
= -12V
GS
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHF597130
2000
20
16
12
8
V
C
= 0V,
= C
f = 1 MHz
GS
V
V
= -80V
DS
DS
I
= -6.7A
+ C , C
SHORTED
D
iss
gs
gd
ds
= -50V
C
= C
rss
gd
1600
VDS= -20V
C
= C + C
oss
ds
gd
C
iss
1200
800
400
0
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
5
10 15 20 25 30 35 40
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
Q
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 150°C
J
100µs
1ms
T
= 25°C
J
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
6
GS
0.1
0.1
1
10
100
1000
0
1
2
3
4
5
7
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHF597130
Pre-Irradiation
RD
7
6
5
4
3
2
1
0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
T
, Case Temperature (°C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHF597130
L
V
DS
600
500
400
300
200
100
0
I
D
-
D.U.T
R
TOP
-3.0A
-4.2A
G
V
DD
A
+
I
AS
DRIVER
BOTTOM -6.7A
V
-
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHF597130
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
Á
V
= -25V, starting T = 25°C, L =10.6mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -6.7A, V
= -12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ -6.7A, di/dt ≤ -530A/µs,
DS
applied and V = 0 during
GS
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
8
www.irf.com
相关型号：
IRHF593130SCS
Power Field-Effect Transistor, 6.7A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
INFINEON
IRHF597130SCS
Power Field-Effect Transistor, 6.7A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明