IRHF7330SE [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF); 抗辐射功率MOSFET直通孔（ TO- 205AF ）
| 型号： | IRHF7330SE |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF) |
| 文件： | 总8页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91864B
IRHF7330SE
JANSR2N7463T2
400V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-205AF)
REF: MIL-PRF-19500/675
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
ID QPL Part Number
IRHF7330SE
100K Rads (Si)
1.39Ω
2.9A JANSR2N7463T2
TO-205AF
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
2.9
1.8
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
11.6
25
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
144
mJ
A
AS
I
2.9
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
6.7
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10 sec.)
0.98 (Typical)
For footnotes refer to the last page
www.irf.com
1
02/07/03
IRHF7330SE
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.50
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.39
Ω
V = 12V, I = 1.8A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
1.3
—
—
—
—
—
4.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 1.8A ➀
DS
I
50
250
V
= 320V ,V =0V
DSS
DS GS
µA
—
V
= 320V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
41
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 2.9A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
7.0
20
V
= 200V
DS
t
t
t
t
35
V
= 200V, I =2.9A,
DD
GS
D
62
58
V
=12V, R = 7.5Ω
G
ns
d(off)
f
58
L
+ L
Total Inductance
—
S
D
nH
Measured from drain lead (6mm/0.25in.
from (package) to source lead
(6mm / 0.25in. from package)
C
C
C
Input Capacitance
Output Capacitance
—
—
—
555
160
60
—
—
—
V
= 0V, V = 25V
DS
f = 1.0MHz
iss
oss
rss
GS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
2.9
S
A
Pulse Source Current (Body Diode) ➀
11.6
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.4
516
3.0
V
T = 25°C, I = 2.9A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = 2.9A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
5.0
thJC
thJA
°C/W
Junction-to-Ambient
175
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHF7330SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
400
2.0
—
—
4.5
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
50
V
= 20V
GSS
GS
nA
µA
I
—
—
V
= -20V
GSS
GS
I
V = 400V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
DS(on)
—
1.39
Ω
V
GS
= 12V, I = 1.8A
D
R
DS(on)
—
—
1.39
1.4
Ω
V
= 12V, I = 1.8A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 2.9A
D
GS
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy Range
MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
43
39
325
325
325
325
325
325
325
275
—
—
36.8
350
300
250
200
150
100
50
Cu
Br
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHF7330SE
Pre-Irradiation
100
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
BOTTOM 5.0V
BOTTOM5.0V
1
5.0V
0.1
5.0V
0.1
0.01
.01
0.001
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
3.0
=
2.9A
I
D
2.5
2.0
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10 11 12
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHF7330SE
1200
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
2.9A
I =
D
GS
C
= C + C
C
SHORTED
iss
gs
V
V
V
= 320V
= 200V
= 80V
DS
DS
DS
C
= C
gd
rss
1000
800
600
400
200
0
C
= C + C
oss
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
8
16
24
32
40
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1
°
1ms
T = 25 C
J
10ms
°
= 25 C
T
C
°
T
= 150 C
J
V
= 0 V
Single Pulse
GS
0.1
0.1
0.0
1
10
100
1000
0.4
SD
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
IRHF7330SE
Pre-Irradiation
RD
3.0
2.4
1.8
1.2
0.6
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
0.05
1
P
0.02
0.01
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHF7330SE
400
300
200
100
0
I
D
TOP
1.3A
1.8A
BOTTOM 2.9A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHF7330SE
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 50V, starting T = 25°C, L= 34mH
J
GS
DS
DD
Peak I = 2.9A, V
irradiation per MIL-STD-750, method 1019, condition A.
= 12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
≤ 2.9A, di/dt ≤ 400A/µs,
DS
= 0 during
SD
DD
320 volt V
DS
applied and V
V
≤ 400V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
www.irf.com
相关型号：
IRHF7330SESCSPBF
Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
IRHF7430SEPBF
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
IRHF7430SESCS
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
IRHF7430SESCSPBF
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
IRHF8110PBF
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
INFINEON
IRHF8130PBF
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
INFINEON
IRHF8210
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON
©2020 ICPDF网 联系我们和版权申明