IRHG4110 [INFINEON]

RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB); 抗辐射功率MOSFET直通孔（ MO- 036AB ）


型号：	IRHG4110
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) 抗辐射功率MOSFET直通孔（ MO- 036AB ）
文件：	总8页 (文件大小：122K)
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PD - 90670C

IRHG7110

100V, QUAD N-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

MOSFET TECHNOLOGY

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level RDS(on)

IRHG7110

IRHG3110

IRHG4110

IRHG8110

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.6Ω

1.0A

1000K Rads (Si) 0.6Ω

MO-036AB

Features:

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.0

= 12V, T = 100°C Continuous Drain Current

0.6

4.0

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy➀

Avalanche Current ➀

1.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

0.14

2.4

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63in./1.6mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

07/17/01

IRHG7110

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)

Parameter

Min Typ Max Units

Test Conditions

—

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.125

—

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.7

0.6

4.0

—

= 12V, I = 1.0A

DS(on)

➀

Ω

= 12V, I = 0.6A

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

0.7

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 0.6A ➀

= 80V, V = 0V

DS GS

DSS

µA

—

250

= 80V,

= 0V, T =125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

100

-100

3.0

4.0

= 20V

GSS

= -20V

=12V, I = 1.0A,

d(on)

= 50V

= 50V, I = 1.0A,

=12V, R = 7.5Ω

GS G

Turn-Off Delay Time

Fall Time

Total Inductance

d(off)

—

+ L

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Input Capacitance

Output Capacitance

—

300

100

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

1.0

4.0

1.5

110

390

T = 25°C, I = 1.0A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = 1.0A, di/dt ≤ 100A/µs

Reverse Recovery Charge

≤ 25V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

thJC

thJA

°C/W

Junction-to-Ambient

Typical socket mount

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHG7110

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀(Per Die)

Parameter

Min

Drain-to-Source Breakdown Voltage 100

100KRads(Si)

300K to 1000K Rads (Si)²Units

Test Conditions

Max

Min

Max

—

100

1.25

—

4.5

100

-100

= 0V, I = 1.0mA

GS D

DSS

Gate Threshold Voltage

2.0

—

4.0

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

On-State Resistance (TO-39)

Static Drain-to-Source

On-State Resistance (MO-036AB)

Diode Forward Voltage

100

-100

= 20V

GSS

—

= -20 V

GSS

—

µA

= 80V, V =0V

DS GS

DSS

DS(on)

➀

0.56

—

0.66

Ω

= 12V, I = 0.6A

DS(on)

➀

—

0.60

1.5

—

0.70

1.5

Ω

= 12V, I = 0.6A

➀

V = 0V, I =1.0A

GS S

1. Part number IRHG7110

2. Part number IRHG3110, IRHG4110, IRHG8110

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area (Per Die)

V_DS(V)

Ion

LET

MeV/(mg/cm²))

28.0

Energy

(MeV)

285

Range

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

43.0

39.0

100

—

36.8

305

120

100

-5

-10

-15

-20

-25

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHG7110

Pre-Irradiation

100

VGS

15V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

0.1

0.01

0.1

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

0.01

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

1.0A

T = 25 C

T = 150 C

= 50V

20µs PULSE WIDTH

= 12V

-60 -40 -20

20 40 60 80 100 120 140 160

11 13

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

www.irf.com

Pre-Irradiation

IRHG7110

500

= 1.0A

= 0V,

f = 1MHz

C SHORTED

= C + C

= 80V

= 50V

= 20V

iss

gd ,

= C

rss

= C + C

400

300

200

100

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

1ms

T = 150 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

2.5

0.1

0.0

0.1

0.5

1.0

1.5

2.0

3.0

100

1000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

www.irf.com

IRHG7110

Pre-Irradiation

R_D

V_DS

1.0

0.8

0.6

0.4

0.2

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

0.0

100

125

150

, Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

+ T

thJA A

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient

www.irf.com

Pre-Irradiation

IRHG7110

150

120

TOP

0.45A

0.63A

BOTTOM 1.0A

15V

DRIVER

D S

D.U .T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig12b. UnclampedInductiveWaveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHG7110

Pre-Irradiation

Footnotes:

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀Total Dose Irradiation with V Bias.

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

➀➀➀V

= 25V, starting T = 25°C, L= 112mH,

Peak I = 1.0A, V

irradiation per MIL-STD-750, method 1019, condition A

= 12V

➀➀Total Dose Irradiation with V Bias.

➀➀ I

≤ 1.0A, di/dt ≤ 187A/µs,

= 0 during

80 volt V

applied and V

≤ 100V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A

Case Outline and Dimensions — MO-036AB

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 07/01

www.irf.com

IRHG4110 [INFINEON]

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