IRHG53110PBF [INFINEON]
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14;
| 型号： | IRHG53110PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94432B
IRHG57110
100V, Q5uad N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
TECHNOLOGY
ꢀꢁ
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHG57110 100K Rads (Si)
IRHG53110 300K Rads (Si)
IRHG54110 500K Rads (Si)
0.29Ω
0.29Ω
0.29Ω
1.6A
1.6A
1.6A
1.6A
IRHG58110 1000K Rads (Si) 0.31Ω
MO-036AB
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
Pre-Irradiation
Units
I
@ V
= 12V, T = 25°C
Continuous Drain Current
1.6
D
GS
GS
C
I
@ V
= 12V, T = 100°C Continuous Drain Current
1.0
6.4
A
D
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
1.4
W
W/°C
V
D
C
Linear Derating Factor
0.011
±20
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
130
mJ
A
AS
I
1.6
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
0.14
mJ
V/ns
AR
dv/dt
6.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/02/06
IRHG57110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
—
—
∆BV
/∆T Temperature Coefficient of Breakdown
0.14
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.29
V = 12V, I = 1.0A
GS D
DS(on)
Ã
Ω
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
1.0
—
—
—
—
—
4.0
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 1.0A Ã
DS
—
10
I
V
= 80V, V = 0V
DS GS
DSS
µA
—
25
V
= 80V,
DS
= 0V, T =125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
17
V
GS
= 20V
GSS
GSS
nA
nC
V
GS
= -20V
Q
Q
Q
=12V, I = 1.6A,
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.4
3.9
21
V
DS
= 50V
t
t
t
t
V
= 50V, I = 1.6A,
DD
GS
D
16
V
=12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
30
d(off)
f
15
L
S
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
Input Capacitance
—
—
—
370
110
3.4
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.2
110
380
S
A
SM
V
V
T = 25°C, I = 1.6A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T = 25°C, I = 1.6A, di/dt ≤ 100A/µs
j
rr
RR
F
V
DD
≤ 25V Ã
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
90
Typical socket mount
thJA
°C/W
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHG57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
1000K Rads (Si)2
Parameter
Up to 500K Rads(Si)1
Units
Test Conditions
Min Max
Min
Max
BV
Drain-to-Source Breakdown Voltage 100
—
100
2.0
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
2.0
—
—
—
—
4.0
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
GS
V
GS
= 20V
GSS
GSS
nA
—
= -20 V
I
—
µA
V
= 80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
Ã
0.226
—
0.246
Ω
V
= 12V, I = 1.0A
GS
D
R
DS(on)
Ã
—
—
0.29
1.2
—
—
0.31
1.2
Ω
V
= 12V, I = 1.0A
D
GS
GS
V
SD
Ã
V
V
= 0V, I = 1.6A
S
1. Part numbers IRHG57110, IRHG53110, IRHG54110
2. Part number IRHG58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
Energy Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V
@VGS=-20V
80
Br
I
36.7
59.8
309
341
39.5
32.5
100
100
100
100
100
100
100
90
100
25
20
120
100
80
60
40
20
0
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHG57110
Pre-Irradiation
10
10
VGS
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
5.0V
1
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
10
100
1
10
100
1
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
1.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
1
V
= 50V
DS
V
= 12V
20µs PULSE WIDTH
GS
0.1
5.0
5.5
6.0 6.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHG57110
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 1.6A
D
GS
C
= C + C
iss
gs
gd ,
V
= 80V
= 50V
= 20V
DS
C
= C
rss
gd
V
V
DS
C
= C + C
oss
ds
gd
DS
600
400
200
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
°
T = 150 C
J
1
1
1ms
°
T = 25 C
J
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHG57110
Pre-Irradiation
RD
1.6
1.3
1.0
0.6
0.3
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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Pre-Irradiation
IRHG57110
300
250
200
150
100
50
I
D
TOP
0.7A
1.0A
BOTTOM 1.6A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
.
V
DD
-
I
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V
°
(BR)DSS
Starting T , Junction Temperature ( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHG57110
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 100mH,
J
DD
Peak I = 1.6A, V
12 volt V
applied and V
GS
DS
=12V
L
GS
irradiation per MIL-STD-750, method 1019, condition A
 I
≤ 1.6A, di/dt ≤ 340A/µs,
≤ 100V, T ≤ 150°C
J
SD
V
Å Total Dose Irradiation with V Bias.
DS
= 0 during
DD
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
80 volt V
applied and V
GS
DS
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
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