IRHG63110 [INFINEON]
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY; 100V ，结合2N -2P - CHANNEL抗辐射的HEXFET MOSFET技术
| 型号： | IRHG63110 |
| 厂家： | 
Infineon |
| 描述： | 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| 文件： | 总14页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93783E
IRHG6110
100V, Combination 2N-2P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
MOSFET TECHNOLOGY
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on)
ID
CHANNEL
IRHG6110
IRHG63110
IRHG6110
IRHG63110
100K Rads (Si)
300K Rads (Si)
100K Rads (Si)
0.6Ω
0.6Ω
1.1Ω
1.0A
N
N
P
P
1.0A
-0.75A
-0.75A
300K Rads (Si) 1.1Ω
MO-036AB
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
=± 12V, T = 25°C Continuous Drain Current
N-Channel
P-Channel
-0.75
-0.5
Units
I
@ V
@ V
1.0
D
GS
C
A
I
=± 12V, T = 100°C Continuous Drain Current
C
0.6
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
4.0
-3.0
DM
@ T = 25°C
P
1.4
1.4
W
W/°C
V
D
C
0.011
±20
0.011
±20
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
GS
E
56 ➀
1.0
75➀➀
-0.75
0.14
mJ
A
AS
I
AR
E
AR
dv/dt
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
0.14
2.4 ➀
mJ
V/ns
2.4 ➀
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
07/17/01
IRHG6110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
—
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.125
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.7
0.6
4.0
—
V
V
= 12V, I = 1.0A
D
DS(on)
GS
GS
➀
Ω
= 12V, I = 0.6A
D
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
0.7
—
V
V
= V , I = 1.0mA
GS(th)
DS
GS
D
Ω
S ( )
V
> 15V, I
= 0.6A ➀
fs
DS
V
DS
I
25
= 80V, V = 0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T =125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
11
3.0
4.0
20
V
GS
= 20V
GSS
GSS
nA
nC
V
= -20V
GS
Q
Q
Q
=12V, I = 1.0A,
g
gs
gd
d(on)
r
GS
D
V
DS
= 50V
t
t
t
t
V
DD
= 50V, I = 1.0A,
D
16
V
=12V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
FallTime
Total Inductance
65
d(off)
45
—
f
L
S
+ L
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
C
Input Capacitance
Output Capacitance
—
—
—
300
100
16
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.0
4.0
1.5
110
390
S
A
SM
SD
V
T = 25°C, I = 1.0A, V
= 0V ➀
j
S
GS
Reverse Recovery Time
nS
nC
T = 25°C, I = 1.0A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHG6110
Electrical Characteristics For Each P-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.11
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
0.6
—
—
—
—
—
—
—
1.2
1.1
-4.0
—
V
= -12V, I = -0.75A
GS D
DS(on)
➀
Ω
V
= -12V, I =- 0.5A
GS
D
V
V
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -0.5A ➀
DS
DS
I
-25
-250
V = -80V, V = 0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
15
V
V
= - 20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -0.75A,
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
4.0
4.3
22
V
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -0.75A,
D
19
66
= -12V, R = 24Ω
GS G
ns
d(off)
f
51
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
—
—
—
335
100
22
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
C
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-0.75
-3.0
-2.5
90
S
A
SM
V
T = 25°C, I = -0.75A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
nC
T = 25°C, I = -0.75A, di/dt ≤ -100A/µs
j
F
Q
Reverse Recovery Charge
257
V
≤ -25V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
www.irf.com
3
Radiation Characteristics
IRHG6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
Parameter
Min
Drain-to-Source Breakdown Voltage 100
100KRads(Si)
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
100
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
2.0
—
—
—
—
4.0
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
100
-100
25
V
GS
V
GS
= 20V
GSS
nA
I
—
= -20 V
GSS
I
—
µA
Ω
V = 80V, V =0V
DS GS
DSS
R
DS(on)
➀
0.56
—
0.66
V
= 12V, I = 0.6A
D
GS
GS
R
DS(on)
➀
—
—
0.60
1.5
—
—
0.70
1.5
Ω
V
= 12V, I = 0.6A
D
V
SD
➀
V
V = 0V, I =1.0A
GS S
1. Part number IRHG6110
2. Part number IRHG63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm)
43.0
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
100
100
100
90
100
70
80
50
60
—
36.8
305
39.0
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
www.irf.com
Radiation Characteristics
IRHG6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
Parameter
Min
Drain-to-Source Breakdown Voltage -100
100KRads(Si)
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
- 4.0
-100
100
-25
-100
-2.0
—
—
-5.0
-100
100
-25
V
= 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
- 2.0
—
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
V
GS
GSS
I
—
—
µA
V =-80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
➀
—
1.06
—
1.06
Ω
V
= -12V, I =-0.5A
D
GS
DS(on)
R
DS(on)
➀
—
—
1.1
—
—
1.1
Ω
V
= -12V, I =-0.5A
D
GS
V
SD
➀
-2.5
-2.5
V
V
= 0V, I = -0.75A
GS S
1. Part number IRHG6110
2. Part number IRHG63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
305
59.8
343
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
IRHG6110
Pre-Irradiation
N-Channel
Q1,Q3
100
100
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
10
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
1
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
1.0A
=
I
D
°
T = 25 C
J
10
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
7
9
11 13
15
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
6
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Pre-Irradiation
IRHG6110
N-Channel
Q1,Q3
20
16
12
8
500
I
D
= 1.0A
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
C
= C + C
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
gd ,
DS
DS
DS
C
= C
rss
C
= C + C
gd
400
300
200
100
0
oss
ds
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
1
°
T = 150 C
J
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
2.5
0.1
0.0
0.1
0.5
V
1.0
1.5
2.0
3.0
1
10
100
1000
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
www.irf.com
7
IRHG6110
Pre-Irradiation
N-Channel
Q1,Q3
RD
VDS
1.0
0.8
0.6
0.4
0.2
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x
Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
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Pre-Irradiation
IRHG6110
N-Channel
Q1,Q3
150
I
D
TOP
0.45A
0.63A
15V
120
90
60
30
0
BOTTOM 1.0A
DRIVER
L
V
D S
D.U .T
R
.
G
+
-
V
D D
I
A
AS
VGS
2
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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9
IRHG6110
Pre-Irradiation
P-Channel
Q2,Q4
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
10
10
1
BOTTOM -5.0V
BOTTOM-5.0V
-5.0V
-5.0V
1
0.1
0.1
0.01
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
°
T = 25 C
J
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-0.75A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
7
9
11 13
15
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
10
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Pre-Irradiation
IRHG6110
P-Channel
Q2,Q4
20
600
500
400
300
200
100
I
D
= -0.75A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
V
=-80V
=-50V
=-20V
C
= C
DS
DS
DS
rss
gd
C
= C + C
16
12
8
oss
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
10
0
1
0
100
0
2
4
6
8
10
12
14
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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11
IRHG6110
Pre-Irradiation
P-Channel
Q2,Q4
RD
0.8
0.6
0.5
0.3
0.2
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
12
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Pre-Irradiation
IRHG6110
P-Channel
Q2,Q4
L
V
DS
200
I
D
TOP
-0.34A
-0.47A
D.U.T
R
.
G
V
DD
160
120
80
40
0
BOTTOM-0.75A
I
A
AS
DRIVER
-2V0GVS
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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13
IRHG6110
Pre-Irradiation
Footnotes:
➀➀Total Dose Irradiation with V
Bias.
GS
= 0 during
➀➀ Repetitive Rating; Pulse width limited by
12 volt V
applied and V
DS
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
➀➀➀V
= 25V, starting T = 25°C, L= 112mH,
J
DD
Peak I = 1.0A, V
= 12V
➀➀Total Dose Irradiation with V Bias.
L
GS
DS
= 0 during
80 volt V
applied and V
GS
➀➀ I
≤ 1.0A, di/dt ≤ 187A/µs,
≤ 100V, T ≤ 150°C
J
DS
SD
irradiation per MlL-STD-750, method 1019, condition A
V
DD
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀V = - 25V, starting T = 25°C, L= 267mH,
DD
Peak I = - 0.75A, V
J
GS
= -12V
L
➀ I
≤ - 0.75A, di/dt ≤ - 132A/µs,
SD
V
≤ -100V, T ≤ 150°C
J
DD
Case Outline and Dimensions — MO-036AB
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
14
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