IRHLF770Z4 [INFINEON]

RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39); 抗辐射的逻辑电平功率MOSFET直通孔（ TO- 39 ）


型号：	IRHLF770Z4
厂家：	Infineon
描述：	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射的逻辑电平功率MOSFET直通孔（ TO- 39 ）
文件：	总8页 (文件大小：150K)
中文：	中文翻译
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PD - 94695B

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (TO-39)

IRHLF770Z4

60V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHLF770Z4 100K Rads (Si)

IRHLF730Z4 300K Rads (Si)

IRHLF740Z4 600K Rads (Si)

0.5Ω

1.6A*

IRHLF780Z4 1000K Rads (Si) 0.5Ω

T0-39

International Rectifier’s R7^TMLogic Level Power

Mosfets provide simple solution to interfacing CMOS

and TTL control circuits to power devices in space

and other radiation environments. The threshold

voltage remains within accptable operating limits

over the full operating temperature and post radiation.

This is achieved while maintaining single event gate

rupture and single event burnout immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Complimentary P-Channel Available -

IRHLF7970Z4

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 4.5V, T = 25°C Continuous Drain Current

1.6*

= 4.5V, T = 100°C Continuous Drain Current

1.0*

6.4

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

5.0

W/°C

Linear Derating Factor

0.04

±10

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

9.0

1.6

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

0.5

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s)

0.98 (Typical)

* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4

For footnotes refer to the last page

www.irf.com

04/07/04

IRHLF770Z4

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250µA

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.08

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.50

Ω

= 4.5V, I = 1.0A

GS D

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

1.0

1.1

—

2.0

—

= V , I = 250µA

GS(th)

Ω

S ( )

= 10V, I

= 1.0A ➀

1.0

= 48V ,V = 0V

DSS

µA

—

= 48V,

= 0V, T =125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

7.0

100

-100

3.6

1.5

1.8

8.0

= 10V

GSS

= -10V

= 4.5V, I = 1.6A

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

= 30V

= 30V, I = 1.6A,

= 4.5V, R = 24Ω

d(off)

+ L

Total Inductance

—

Measured from Drain lead (6mm /0.25in

from package) to Source lead(6mm/0.25in

from packge)with Source wire internally

bonded from Source pin to Drain pad

Input Capacitance

—

152

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

oss

rss

Reverse Transfer Capacitance

1.6

—

Ω

f = 5.0MHz, open drain

Gate Resistance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

1.6*

6.4

1.2

T = 25°C, I = 1.6A, V

= 0V ➀

Reverse Recovery Time

100

150

T = 25°C, I = 1.6A, di/dt ≤ 100A/µs

Reverse Recovery Charge

≤ 25V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

°C/W

thJC

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHLF770Z4

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

Up to 600K Rads(Si) 1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

1.0

—

2.0

100

-100

1.0

—

2.0

100

-100

= 0V, I = 250µA

GS D

DSS

V = V , I = 250µA

DS D

GS(th)

= 10V

GSS

—

= -10 V

GSS

—

µA

= 48V, V =0V

DS GS

DSS

Static Drain-to-Source

On-State Resistance (TO-39)

Diode Forward Voltage

➀

—

0.5

—

0.5

Ω

= 4.5V, I = 1.0A

DS(on)

➀

—

1.2

—

1.2

= 0V, I = 1.6A

1. Part numbers IRHLF770Z4, IRHLF730Z4 and IRHLF740Z4

2. Part number IRHLF780Z4

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2.Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS (V)

(MeV/(mg/cm2)) (MeV)

(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

-2V

-4V

-5V

-6V

-7V

-8V

-10V

37.3

59.9

82.3

285

345

357

36.8

32.7

357

-2

-4

-6

VGS

-8

-10

-12

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHLF770Z4

Pre-Irradiation

VGS

7.5V

TOP

7.5V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

TOP

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

BOTTOM 2.25V

2.25V

60µs PULSE WIDTH

Tj = 25°C

60µs PULSE WIDTH

Tj = 150°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

1.6A

= 150°C

= 25°C

= 25V

60µs PULSE WIDTH

= 4.5V

-60 -40 -20

20 40 60 80 100 120 140 160

2.5

3.5

4.5

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

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Pre-Irradiation

IRHLF770Z4

250

= 1.6A

= 0V,

f = 1MHz

gd , ds

= 48V

= 30V

= 12V

= C + C

SHORTED

iss

= C

rss

= C + C

200

150

100

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

OPERATION IN THIS AREA LIMITED

BY RDS(on)

= 150°C

100µs

= 25°C

1ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

10ms

0.1

1.0

100

1000

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

, Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

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IRHLF770Z4

Pre-Irradiation

R_D

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

+ T

thJC

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRHLF770Z4

TOP

0.7A

1.0A

BOTTOM 1.6A

15V

DRIVER

D S

D.U.T

D D

2V0_GV_S

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

4.5V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHLF770Z4

Footnotes:

Pre-Irradiation

➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀ Total Dose Irradiation with V Bias.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

10 volt V

applied and V

➀ V

= 25V, starting T = 25°C, L= 7.0 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 1.6A, V

= 10V

➀ Total Dose Irradiation with V Bias.

➀ I

≤ 1.6A, di/dt ≤ 92A/µs,

= 0 during

48 volt V

applied and V

≤ 60V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —TO-205AF (ModifiedTO-39)

LEGEND

1- SOURCE

2- GATE

3- DRAIN

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2004

www.irf.com

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