IRHLG77214 [INFINEON]
Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14;
| 型号： | IRHLG77214 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97339
2N7614M1
RADIATION HARDENED
IRHLG77214
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
250V, Quad N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG77214
IRHLG73214
100K Rads (Si) 1.1Ω
300K Rads (Si) 1.1Ω
0.8A
0.8A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
MO-036AB
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
0.8
D
D
GS
GS
C
A
I
= 4.5V, T = 100°C Continuous Drain Current
0.5
3.2
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
1.4
W
W/°C
V
D
C
0.01
±10
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
50.4
0.8
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
0.14
12.3
-55 to 150
mJ
V/ns
AR
dv/dt
T
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
02/25/11
IRHLG77214, 2N7614M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
250
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.34
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.1
Ω
V
GS
= 4.5V, I = 0.5A
D
DS(on)
Ã
V
Gate Threshold Voltage
1.0
—
1.0
—
—
-6.0
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
V
= 15V, I
= 0.5A Ã
DS
DS
I
Zero Gate Voltage Drain Current
= 200V ,V = 0V
DSS
DS
GS
—
V
= 200V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
15
3.5
8.3
18
85
35
30
—
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
V
= 4.5V, I = 0.8A
g
gs
gd
d(on)
r
GS D
V
DS
= 125V
t
t
t
t
V
DD
GS
= 125V, I = 0.8A,
= 4.5V, R = 7.5Ω
D
G
ns
V
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
552
69
1.43
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
—
6.77
—
Ω
f = 1.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
290
388
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 0.8A, V
= 0V Ã
j
S
GS
T = 25°C, I = 0.8A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
90
°C/W
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHLG77214, 2N7614M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
250
1.0
—
—
—
—
2.0
100
-100
10
V
V
= 0V, I = 250µA
D
DSS
GS
GS
V
V
= V , I = 250µA
GS(th)
DS
D
I
V
GS
= 10V
GSS
nA
µA
I
V
= -10V
GS
GSS
I
V = 200V, V =0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036AB)
—
??
Ω
V
= 4.5V, I = 0.5A
D
GS
GS
R
DS(on)
—
—
1.1
1.2
Ω
V
= 4.5V, I = 0.5A
D
V
Diode Forward Voltage
V
V
= 0V, I = 0.8A
GS
D
SD
1. Part numbers IRHLG77214, IRHLG73214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-2V
@VGS=
-4V
@VGS=
-5V
@VGS=
-6V
@VGS=
-7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
250
250
250
250
250
250
250
250
250
250
250
250
250
250
-
250
-
-
300
250
200
150
100
50
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
0
-1 -2 -3 -4 -5 -6 -7
Bias VGS (Volts)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLG77214, 2N7614M1
Pre-Irradiation
10
10
VGS
10V
4.5V
4.0V
3.5V
3.0V
VGS
10V
4.5V
4.0V
3.5V
3.0V
TOP
TOP
2.75V
2.50V
BOTTOM 2.25V
2.75V
2.50V
BOTTOM 2.25V
2.25V
1
1
µ
60 s PULSE WIDTH
Tj = 150°C
60 s PULSE WIDTH, Tj=25°C
µ
2.25V
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
I
= 0.8A
D
T
= 150°C
J
T
= 25°C
J
1
V
= 50V
DS
0µ
V
= 4.5V
GS
6
s PULSE WIDTH
0.1
2
2.2
2.4
2.6
2.8
3
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T
J
, Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHLG77214, 2N7614M1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
= 0.8A
D
T
= 150°C
J
T
T
= 150°C
J
J
T
= 25°C
J
= 25°C
Vgs = 4.5V
3.5
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
4
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
350
330
310
290
270
250
3.0
I
= 1.0mA
D
2.5
2.0
1.5
1.0
0.5
0.0
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
www.irf.com
5
IRHLG77214, 2N7614M1
Pre-Irradiation
1200
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
I
= 0.8A
V
V
V
= 200V
D
DS
DS
DS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= 125V
= 50V
= C
1000
800
600
400
200
0
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
1
0.8
0.6
0.4
0.2
0
T
= 150°C
J
5°C
= 2
T
J
0.1
0.01
V
= 0V
GS
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
25
50
T
75
100
125
150
V
, Case Temperature (°C)
SD
C
Fig 11. Typical Source-to-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
www.irf.com
Pre-Irradiation
IRHLG77214, 2N7614M1
120
100
80
60
40
20
0
10
OPERATION IN THIS AREA LIMITED BY R (on)
DS
I
D
TOP
0.80A
0.50A
BOTTOM 0.36A
1
0.1
µ
100 s
1ms
10ms
0.01
0.001
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. DrainCurrent
1000
100
10
1
D = 0.50
0.20
0.10
P
DM
0.05
t
1
0.02
0.01
t
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.1
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
7
IRHLG77214, 2N7614M1
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
t
Ω
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
4.5V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
www.irf.com
Pre-Irradiation
Footnotes:
IRHLG77214, 2N7614M1
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 157mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 0.8A, V
= 10V
L
GS
Å Total Dose Irradiation with V Bias.
Â
I
V
≤ 0.8A, di/dt ≤ 340A/µs,
DS
= 0 during
SD
DD
200 volt V
applied and V
≤ 250V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2011
www.irf.com
9
相关型号：
IRHLG7930Z4
Small Signal Field-Effect Transistor, 0.71A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14
INFINEON
IRHLG7S7214
250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package - A IRHLG7S7214 with RadHard Hermetic Packaging
INFINEON
IRHLNA797064B
Power Field-Effect Transistor, 56A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN
INFINEON
IRHLNA797064SCS
Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL
INFINEON
IRHLNA797064SCSD
Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL, On DBC carrier
INFINEON
©2020 ICPDF网 联系我们和版权申明