IRHLNJ73034 [INFINEON]

Power Field-Effect Transistor, 22A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;


型号：	IRHLNJ73034
厂家：	Infineon
描述：	Power Field-Effect Transistor, 22A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN 开关脉冲晶体管
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PD-97301

2N7606U3

RADIATION HARDENED

IRHLNJ77034

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.5)

60V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNJ77034

IRHLNJ73034

Radiation Level RDS(on)

22A*

100K Rads (Si)

300K Rads (Si)

0.035Ω

SMD-0.5

Features:

International Rectifier’s R7_TMLogic Level Power

MOSFETs provide simple solution to interfacing CMOS

and TTL control circuits to power devices in space and

other radiation environments. The threshold voltage

remains within acceptable operating limits over the

full operating temperature and post radiation. This is

achieved while maintaining single event gate rupture

and single event burnout immunity.

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

These devices are used in applications such as current

boost low signal source in PWM, voltage comparator

and operational amplifiers.

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= 4.5V,T = 25°C

Continuous Drain Current

22*

= 4.5V,T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

@ T = 25°C

W/°C

0.45

±10

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

5.7

V/ns

dv/dt

8.8

-55 to 150

°C

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

STG

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

05/06/08

IRHLNJ77034, 2N7606U3

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250µA

GS D

DSS

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.068

—

V/°C

Reference to 25°C, I = 1.0mA

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.035

Ω

= 4.5V, I = 20A

DS(on)

GS D

1.0

—

-4.9

—

2.0

—

1.0

mV/°C

= V , I = 250µA

GS(th)

∆V

/∆T

GS(th)

= 10V, I

= 20A Ã

= 48V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

4.0

100

-100

8.0

7.0

= 10V

= -10V

GSS

= 4.5V, I = 22A

d(on)

GS D

= 30V

= 30V, I = 22A,

DD D

V = 5.0V, R = 7.5Ω

d(off)

—

+ L

Measured from the center of

drain pad to center of source pad

Ciss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

2015

488

4.5

—

= 0V, V

= 25V

f = 1.0MHz

oss

rss

f = 1.0MHz, open drain

Ω

Gate Resistance

1.18

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

22*

1.2

286

704

T = 25°C, I = 22A, V

= 0V Ã

T = 25°C, I = 22A, di/dt ≤ 100A/µs

≤ 25V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

°C/W

Junction-to-Case

—

2.2

thJC

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHLNJ77034, 2N7606U3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Upto 300K Rads (Si)¹Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

1.0

—

2.0

100

-100

1.0

= 0V, I = 250µA

DSS

GS D

= V , I = 250µA

GS(th)

= 10V

GSS

DSS

µA

= -10V

= 48V, V =0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

—

0.03

Ω

= 4.5V, I = 20A

DS(on)

Static Drain-to-Source On-state

Resistance (SMD-0.5)

—

0.035

1.2

Ω

= 4.5V, I = 20A

Diode Forward Voltage

= 0V, I = 22A

1. Part numbers IRHLNJ77034, IRHLNJ73034

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS (V)

(MeV/(mg/cm²))

(MeV)

(µm)

@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

-1V

-2V

-3V

-4V

-5V

-7V

-8V

37.3

63.3

400

435

48.6

38.4

80.4

1480

-1 -2 -3 -4 -5 -6 -7 -8

VGS

Fig a. Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHLNJ77034, 2N7606U3

Pre-Irradiation

100

VGS

10V

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.50V

5.0V

4.5V

4.0V

3.5V

3.0V

2.50V

BOTTOM 2.30V

2.3V

2.30V

60 s PULSE WIDTH

Tj = 150°C

60 s PULSE WIDTH, Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

100

= 22A

= 150°C

= 25°C

= 25V

= 4.5V

60µs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

2.5

3.5

4.5

, Gate-to-Source Voltage (V)

, Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

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Pre-Irradiation

IRHLNJ77034, 2N7606U3

100

= 22A

= 150°C

= 25°C

Vgs = 4.5V

10 20 30 40 50 60 70 80

I , Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 5. Typical On-Resistance Vs

Fig 6. Typical On-Resistance Vs

GateVoltage

DrainCurrent

2.5

2.0

1.5

1.0

0.5

0.0

= 1.0mA

= 50µA

= 250µA

= 1.0mA

= 150mA

-60 -40 -20

20 40 60 80 100 120 140 160

, Temperature ( °C )

-60 -40 -20

20 40 60 80 100 120 140 160

, Temperature ( °C )

Fig 7. Typical Drain-to-Source

BreakdownVoltageVsTemperature

Fig 8. Typical Threshold Voltage Vs

Temperature

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IRHLNJ77034, 2N7606U3

Pre-Irradiation

4000

= 0V,

= C

f = 1 MHz

= 48V

= 22A

+ C , C

SHORTED

3600

3200

2800

2400

2000

1600

1200

800

iss

= 30V

= 12V

= C

rss

oss

= C + C

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 17

400

rss

100

10 15 20 25 30 35 40 45 50 55 60

Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 10. Typical Gate Charge Vs.

Fig 9. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

LIMITED BY PACKAGE

= 150°C

= 25°C

0.1

0.01

= 0V

1.4

0.2

0.4

0.6

0.8

1.2

1.6

100

125

150

, Source-to-Drain Voltage (V)

, Case Temperature (°C)

Fig 12. Maximum Drain Current Vs.

Fig 11. Typical Source-to-Drain Diode

CaseTemperature

ForwardVoltage

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Pre-Irradiation

IRHLNJ77034, 2N7606U3

120

100

1000

OPERATION IN THIS AREA

LIMITED BY R (on)

TOP

9.8A

13.9A

22A

100

BOTTOM

100µs

1ms

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

, Drain-to-Source Voltage (V)

100

125

150

Starting T , Junction Temperature (°C)

Fig 13. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy

Vs. DrainCurrent

D = 0.50

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

1E-005

0.0001

0.001

0.01

0.1 1

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRHLNJ77034, 2N7606U3

Pre-Irradiation

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01

Ω

Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

4.5V

.2µF

12V

.3µF

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 17a. Basic Gate Charge Waveform

Fig 17b. Gate Charge Test Circuit

R_D

V_DS

90%

V_GS

V_DD

D.U.T.

R_G

10%

V_GS

PulseWidth ≤ 1µs

Duty Factor≤ 0.1 %

d(on)

d(off)

Fig 18b. Switching Time Waveforms

Fig 18a. Switching Time Test Circuit

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Pre-Irradiation

Footnotes:

IRHLNJ77034, 2N7606U3

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

10 volt V

applied and V

= 25V, starting T = 25°C, L= 0.26mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 22A, V

= 10V

Å Total Dose Irradiation with V

Bias.

≤ 22A, di/dt ≤ 328A/µs,

= 0 during

48 volt V

applied and V

≤ 60V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

1 = DRAIN

2 = GATE

3 = SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2008

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