IRHLNJ797034 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射的逻辑电平功率MOSFET表面贴装( SMD- 0.5 )型号: | IRHLNJ797034 |
厂家: | Infineon |
描述: | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) |
文件: | 总9页 (文件大小:205K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-97302A
2N7624U3
IRHLNJ797034
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHLNJ797034
IRHLNJ793034
Radiation Level RDS(on)
100K Rads (Si) 0.072Ω
300K Rads (Si) 0.072Ω
ID
22A*
22A*
SMD-0.5
Features:
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@V
@V
= -4.5V,T = 25°C Continuous Drain Current
-22*
-14.9
-88
D
D
GS
GS
C
A
I
= -4.5V,T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
DM
@ T = 25°C
P
57
W
W/°C
V
D
C
0.45
±10
V
GS
E
79
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
5.7
mJ
V/ns
AR
dv/dt
-12.3
-55 to 150
T
J
°C
g
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
STG
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
10/05/10
IRHLNJ797034, 2N7624U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V = 0V, I = -250µA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.055
—
V/°C Reference to 25°C, I = -1.0mA
D
DSS
J
Voltage
Ã
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.072
Ω
V
= -4.5V, I = -14.9A
DS(on)
GS D
-1.0
—
16
—
—
3.5
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= -10V, I
= -14.9A Ã
DS
DS
I
V
= -48V ,V = 0V
DSS
DS
GS
µA
—
V
= -48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
36
10
18
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
Q
Q
Q
V
= -4.5V, I = -22A
g
gs
gd
d(on)
r
GS D
nC
V
= -30V
DS
t
t
t
t
32
V
= -30V, I = -22A,
DD D
V = -5.0V, R = 7.5Ω
GS
250
100
85
G
ns
d(off)
f
L
+ L
—
Measured from the center of
S
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2261
583
91
—
—
—
V
GS
= 0V, V
= -25V
f = 1.0MHz
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
Gate Resistance
20
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-22*
-88
-5.0
110
132
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -22A, V
= 0V Ã
j
S
GS
T = 25°C, I = -22A, di/dt ≤ -100A/µs
j
F
V
DD
≤ -25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
2.2
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLNJ797034, 2N7624U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-60
-1.0
—
—
—
—
V
= 0V, I = -250µA
DSS
GS D
V
V
-2.0
-100
100
-1.0
V
GS
= V , I = -250µA
GS(th)
DS
D
I
I
I
V
GS
= -10V
GSS
GSS
DSS
nA
µA
V
GS
= 10V
V
= -48V, V = 0V
DS GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.076
Ω
V
= -4.5V, I = -14.9A
D
GS
R
DS(on)
Static Drain-to-Source On-state
Resistance (SMD-0.5)
—
—
0.072
-5.0
Ω
V
= -4.5V, I = -14.9A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = -22A
D
GS
SD
1. Part numbers IRHLNJ797034, IRHLNJ793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
2V
@VGS=
4V
@VGS=
5V
@VGS=
6V
@VGS=
7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-40
-
-
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLNJ797034, 2N7624U3
Pre-Irradiation
100
10
1
100
VGS
VGS
-10V
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.0V
-2.7V
-2.5V
TOP
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.3V
BOTTOM -2.3V
-2.3V
10
-2.3V
µ
20 s PULSE WIDTH
Tj = 150°C
µ
20 s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -22A
D
T
= 150°C
J
T
= 25°C
J
V
= -25V
DS
60µs PULSE WIDTH
V
= -4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
4.5
5
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
160
140
120
100
80
140
130
120
110
100
90
I
= -22A
D
T
= 150°C
= 25°C
J
T
T
= 150°C
J
J
80
60
70
T
J
60
40
= 25°C
50
20
Vgs = -4.5V
40
0
30
2
4
6
8
10
12
0
10 20 30 40 50 60 70 80
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
75
70
65
60
55
2.5
2.0
1.5
1.0
0.5
0.0
I
= -1.0mA
D
I
I
I
I
= -50µA
D
D
D
D
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHLNJ797034, 2N7624U3
Pre-Irradiation
3600
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
= -48V
DS
C
C
C
+ C , C
SHORTED
I
= -22A
iss
gs
gd
ds
3200
2800
2400
2000
1600
1200
800
D
VDS = -30V
= C
rss
oss
gd
= C + C
VDS = -12V
ds
gd
C
iss
6
C
4
oss
2
FOR TEST CIRCUIT
SEE FIGURE 17
400
C
rss
0
0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
Q
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
25
20
15
10
5
100
LIMITED BY PACKAGE
T
= 150°C
J
10
1
T
= 25°C
J
V
= 0V
5
GS
0.1
0
0
1
-V
2
3
4
6
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-to-Drain Diode
CaseTemperature
ForwardVoltage
6
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
140
120
100
80
1000
I
OPERATION IN THIS AREA LIMITED
BY R (on)
D
TOP
-9.8A
-13.9A
BOTTOM -22A
DS
100
10
1
100 s
µ
60
1ms
10ms
DC
40
Tc = 25°C
Tj = 150°C
Single Pulse
20
0.1
0
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
-V
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
10
D = 0.50
1
P
DM
0.20
0.10
t
1
t
2
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHLNJ797034, 2N7624U3
Pre-Irradiation
L
I
AS
V
DS
-
+
D.U.T
R
G
V
DD
A
I
AS
DRIVER
V
-20V
GS
0.01
Ω
t
p
t
p
15V
V
(BR)DSS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
-4.5V
.3µF
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
D.U.T.
10%
RG
-
+
VDD
VGS
90%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLNJ797034, 2N7624U3
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
GS
= 0 during
-10 volt V
applied and V
Á V
= -25V, starting T = 25°C, L = 0.32mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -22A, V
= -10V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ -22A, di/dt ≤ -350A/µs,
DS
= 0 during
SD
DD
-48 volt V
applied and V
V
≤ -60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
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9
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