IRHLQ7S7214 [INFINEON]

250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a 28-Pin LCC package - A IRHLQ7S7214 with RadHard Hermetic Packaging;


型号：	IRHLQ7S7214
厂家：	Infineon
描述：	250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a 28-Pin LCC package - A IRHLQ7S7214 with RadHard Hermetic Packaging
文件：	总14页 (文件大小：1494K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRHLQ7S7214 (2N7615U6)

PD-97834C

Radiation Hardened Logic Level Power MOSFET

Thru-Hole (LCC-28)

250V, 2.6A, Quad N-channel, R7 Technology

Features

Product Summary

•

5V CMOS and TTL compatible

•

BV_DSS: 250V

I_D: 2.6A

R_DS(on),max: 1.0

Q_{G, max}: 18nC

Fast switching

Single event effect (SEE) hardened

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package

Surface mount

Light weight

ESD rating: Class 1B per MIL-STD-750, Method 1020

Potential Applications

•

DC-DC converter

Motor drives

•

LCC-28

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R7 S-Line Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation environments. The threshold voltage remains within

acceptable operating limits over the full operating temperature and post radiation. This is achieved while

maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to

interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a

3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational

amplifier where the logic level drive signal is available.

Ordering Information

Table 1

Part number

IRHLQ7S7214

Ordering options

Package

Screening Level

COTS

TID Level

LCC-28

100 krad(Si)

300 krad(Si)

IRHLQ7S7214SCS

IRHLQ7S3214

LCC-28

S-Level

COTS

IRHLQ7S3214SCS

S-Level

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-01-06

IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Table of contents

Features ........................................................................................................................................ 1

Potential Applications..................................................................................................................... 1

Product Validation.......................................................................................................................... 1

Description .................................................................................................................................... 1

Ordering Information...................................................................................................................... 1

Table of contents............................................................................................................................ 2

Absolute Maximum Ratings ..................................................................................................... 3

Device Characteristics ............................................................................................................ 4

Electrical Characteristics (Pre-Irradiation).............................................................................................4

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) .......................................................5

Thermal Characteristics..........................................................................................................................5

Radiation Characteristics........................................................................................................................5

Electrical Characteristics — Post Total Dose Irradiation ..................................................................5

Single Event Effects — Safe Operating Area......................................................................................6

2.1

2.2

2.3

2.4

2.4.1

2.4.2

Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7

Test Circuits (Pre-irradiation).................................................................................................11

Package Outline....................................................................................................................12

Revision history.............................................................................................................................13

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Absolute Maximum Ratings

Table 2

Absolute Maximum Ratings (Pre-Irradiation)

Symbol

Parameter

Value

2.6

Unit

I_D1@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

1.6

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current ¹

10.4

Maximum Power Dissipation

Linear Derating Factor

W/^°C

0.1

V_GS

E_AS

Gate-to-Source Voltage

± 10

38.5

2.6

Single Pulse Avalanche Energy ²

Avalanche Current ¹

I_AR

E_AR

Repetitive Avalanche Energy ¹

Peak Diode Reverse Recovery ³

1.2

V/ns

dv/dt

5.56

T_J

T_STG

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to +150

^°C

300 (for 5s)

0.89 (Typical)

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²V_DD= 50V, starting T_J= 25°C, L = 11.4mH, Peak I_L= 2.6A, V_GS= 10V

³I_SD 2.6A, di/dt  399A/µs, V_DD 250V, T_J 150°C

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Symbol

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

250

—

0.25

—

V_GS= 0V, I_D= 250A

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

V/°C Reference to 25°C, I_D= 1.0mA

Static Drain-to-Source On-State

Resistance

R_DS(on)

V_GS(th)

—

1.0

V_GS= 4.5V, I_D2= 1.6A ¹



Gate Threshold Voltage

1.0

—

2.5

—

-5.3

—

2.0

—

V_DS= V_GS, I_D= 250A

V_GS(th)/T_JGate Threshold Voltage Coefficient

Gfs

Forward Transconductance

—

V_DS= 15V, I_D2= 1.6A ¹

V_DS= 200V, V_GS= 0V

V_DS= 200V, V_GS= 0V, T_J= 125°C

V_GS= 10V

—

1.0

I_DSS

Zero Gate Voltage Drain Current

A

—

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

100

-100

I_GSS

—

V_GS= -10V

Q_G

—

I_D1= 2.6A

V_DS= 125V

V_GS= 4.5V

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

5.0

—

I_D1= 2.6A **

—

V_DD= 125V

R_G= 7.5

V_GS= 5.0V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

—

Measured from the center of

drain pad to center of source

pad

L_s+L_D

Total Inductance

—

6.1

—

C_iss

C_oss

C_rss

R_G

Input Capacitance

—

605

—

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.7

8.0

ƒ = 1.0MHz, open drain



** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Device Characteristics

2.2

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation)

Table 4

Source-Drain Diode Characteristics

Symbol Parameter

Min. Typ. Max. Unit Test Conditions

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) ¹

—

2.6

10.4

1.2

I_SM

V_SD

t_rr

Diode Forward Voltage

T_J= 25°C, I_S= 2.6A, V_GS= 0V

Reverse Recovery Time

371

858

T_J= 25°C, I_F= 2.6A, V_DD≤ 25V

di/dt = 100A/µs

Q_rr

t_on

Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

2.3

Thermal Characteristics

Table 5

Symbol

R_J-PCB

R_JA

Thermal Resistance

Parameter

Min. Typ. Max.

Unit

^°C/W

Junction-to-PCB

—

10.4

Junction-to-Ambient

2.4

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness

assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for

total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are

tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

2.4.1

Electrical Characteristics — Post Total Dose Irradiation

Table 6

Electrical Characteristics @ T_J= 25°C, Post Total Dose Irradiation ^{3, 4}

Up to 300 krad (Si)⁵

Symbol

Parameter

Unit

Test Conditions

Min.

250

1.0

—

Max.

—

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 10V

2.0

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

1.0

µA



—

V_GS= -10V

I_DSS

—

V_DS= 200V, V_GS= 0V

R_DS(on)

Static Drain-to-Source

—

0.85

V_GS= 4.5V, I_D2= 1.6A

On-State Resistance (TO-3) ²

R_DS(on)

V_SD

Static Drain-to-Source

—

1.0

1.2

V_GS= 4.5V, I_D2= 1.6A

V_GS= 0V, I_F= 2.6A



On-State Resistance (LCC-28) ²

Diode Forward Voltage

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²Pulse width  300 µs; Duty Cycle  2%

³Total Dose Irradiation with V_GSBias. V_GS= 10V applied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

⁴Total Dose Irradiation with V_DSBias. V_DS= 200V applied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

⁵Part numbers IRHLQ7S7214 and IRHLQ7S3214

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Device Characteristics

2.4.2

Single Event Effects — Safe Operating Area

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event

Effects (SEE). Single Event Effects characterization is illustrated in Fig. 1 and Table 7.

Table 7

Typical Single Event Effects Safe Operating Area

V_DS(V)

LET

(MeV·cm²/mg)

Energy

(MeV)

Range

(µm)

ION

V_GS= 0V V_GS= -1V V_GS= -5V

V_GS= -7V

250

35 ± 5%

580 ± 5%

70 ± 5%

250

60 ± 7.5%

1050 ± 5% 79 ± 5%

—

Figure 1

Typical Single Event Effect, Safe Operating Area

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Electrical Characteristics Curves (Pre-irradiation)

Figure 2

Typical Output Characteristics

Figure 3

Typical Output Characteristics

Figure 4

Typical Transfer Characteristics

Figure 5

Normalized On-Resistance Vs.

Temperature

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Electrical Characteristics Curves (Pre-irradiation)

Figure 6

Typical On-Resistance Vs Gate Voltage Figure 7

Typical On-Resistance Vs Drain

Current

Figure 8

Typical Drain-to Source Breakdown

Voltage Vs. Temperature

Figure 9

Typical Threshold Voltage Vs

Temperature

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Electrical Characteristics Curves (Pre-irradiation)

Figure 10 Typical Capacitance Vs.

Drain-to-Source Voltage

Figure 11 Typical Gate Charge Vs. Gate-to-Source

Voltage

Figure 12 Typical Source-Drain Diode Forward

Voltage

Figure 13 Maximum Drain Current Vs. Case

Temperature

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Electrical Characteristics Curves (Pre-irradiation)

Figure 14 Maximum Safe Operating Area

Figure 15 Maximum Avalanche Energy Vs.

Junction Temperature

Figure 16 Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Test Circuits (Pre-irradiation)

Figure 17 Gate Charge Test Circuit

Figure 18 Gate Charge Waveform

Figure 19 Unclamped Inductive Test Circuit

Figure 20 Unclamped Inductive Waveform

Figure 21 Switching Time Test Circuit

Figure 22 Switching Time Waveforms

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Package Outline

Note: For the most updated package outline, please see the website: LCC-28

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IRHLQ7S7214 (2N7615U6)

Radiation Hardened Logic Level Power MOSFET Surface mount (LCC-28)

Revision history

Document

version

Date of release

Description of changes

03/02/2016

10/23/2020

04/27/2021

01/06/2023

Datasheet (PD-97834)

Rev A

Rev B

Rev C

Updated based on ECN-1120_08221

Updated based on ECN-1120_08546

Updated based on ECN-1120_09176

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Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

WARNINGS

Edition 2023-01-06

Published by

The information given in this document shall in no Due to technical requirements components may

event be regarded as a guarantee of conditions or contain dangerous substances. For information on

characteristics (“Beschaffenheitsgarantie”).

the types in question please contact your nearest

International Rectifier HiRel Products, Inc., an

Infineon Technologies company, office.

With respect to any examples, hints or any typical

International Rectifier HiRel Products,

Inc.

values stated herein and/or any information

regarding the application of the product, Infineon International Rectifier HiRel Components may only

Technologies hereby disclaims any and all be used in life-support devices or systems with the

warranties and liabilities of any kind, including expressed written approval of International Rectifier

without limitation warranties of non-infringement of HiRel Products, Inc., an Infineon Technologies

An Infineon Technologies company

El Segundo, California 90245 USA

intellectual property rights of any third party.

company, if failure of such components can

reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety

and effectiveness of that device or system.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and standards Life support devices or systems are intended to be

concerning customer’s products and any use of the implanted in the human body, or to support and/or

product of Infineon Technologies in customer’s maintain and sustain and/or protect human life. If

Do you have a question about this

document?

applications.

they fail, it is reasonable to assume that the health of

the user or other persons may be endangered.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

Email: erratum@infineon.com

Document reference

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(www.infineon.com).

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