IRHM2C50SED [INFINEON]

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;


型号：	IRHM2C50SED
厂家：	Infineon
描述：	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网开关脉冲晶体管
文件：	总8页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91252A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM2C50SE

IRHM7C50SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

600Volt, 0.6Ω, (SEE) RAD HARD HEXFET

Part Number

IRHM2C50SE

IRHM7C50SE

BVDSS

600V

RDS(on)

0.60Ω

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under identical pre- and post-irrradiation

test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal op-

eration within a few microseconds.Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

10.4A

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Electrically Isolated

Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM2C50SE, IRHM7C50SE Units

@ V

= 12V, T = 25°C Continuous Drain Current

10.4

@ V

= 12V, T = 100°C Continuous Drain Current

6.5

41.6

151

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

1.2

±20

Single Pulse Avalanche Energy

Avalanche Current

500

10.4

15.1

4.0

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.063 in. (1.6mm) from

case for 10 sec.)

Weight

9.3 (typical)

www.irf.com

1/6/99

IRHM2C50SE, IRHM7C50SE Devices

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

600

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.6

V/°C

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.5

3.0

—

0.60

0.65

4.5

—

= 12V, I = 6.5A

GS D

DS(on)

Ω

= 12V, I = 10.4A

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 6.5A

250

= 0.8 x Max Rating,V =0V

DSS

DS GS

µ A

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

100

-100

150

= 20V

= -20V

GSS

= 12V, I = 10.4A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

= Max Rating x 0.5

d(on)

= 300V, I = 10.4A,

DD D

Rise Time

Turn-Off Delay Time

= 2.35Ω

d(off)

Fall Time

symbol show-

Measured from drainlead,

6mm (0.25 in) from package

tocenterofdie.

Measured from source lead,

6mm (0.25 in) from package

to source bonding pad.

Modified MOSFET

ingtheinternal inductances.

Internal Drain Inductance

—

Internal Source Inductance

—

8.7

—

Input Capacitance

—

2510

400

110

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

10.4

41.6

Modified MOSFET symbol showingtheintegral

reversep-njunctionrectifier.

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.6

750

9.8

T = 25°C, I = 10.4A, V

= 0V

µC

T = 25°C, I = 10.4A, di/dt ≤ 100A/µs

≤ 50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thCS

thJA

Junction-to-Case

Case-to-Sink

—

0.21

—

0.83

—

°C/W

Junction-to-Ambient

Typical socket mount

www.irf.com

Radiation Characteristics

IRHM2C50SE, IRHM7C50SE Devices

Radiation Performance of Rad Hard HEXFETs

met for either of the two low dose rate test circuits

that are used. Both pre- and post-irradiation perfor-

mance are tested and specified using the same drive

circuitry and test conditions in order to provide a di-

rect comparison. It should be noted that at a radiation

level of 1 x 10⁵Rads (Si) the only parameter limit

change is V_GSThminimum .

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability.The hard-

ness assurance program at International Rectifier

comprises 3 radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per note

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec ( See Table 2).

5 and a V

bias condition equal to 80% of the de-

vice rated voltage per note 6. Pre and Post-irradia-

tion limits of the devices irradiated to 0.5 x 10⁵Rads

(Si) and 1 x 10⁵Rads (Si) are identical and pre-

sented in Table 1, column 1, IRHM2C50SE and col-

umn 2, IRHM7C50SE. The values in Table 1 will be

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects

characterization is shown in Table 3.

Table 1. Low Dose Rate ꢀ

IRHM2C50SE IRHM7C50SE

50 K Rads (Si) 100 K Rads (Si) Units

Parameter

Test Conditions

= 0V, I = 1.0mA

Min Max

Min

Max

Drain-to-Source Breakdown Voltage 600

—

4.5

100

-100

600

2.0

—

4.5

100

-100

DSS

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

2.5

—

= V , I = 1.0mA

GS(th)

= 20V

GSS

DSS

—

= -20 V

µA

=0.8 x Max Rating, V

=0V

0.6

—

0.6

Ω

= 12V, I =6.5A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.6

—

1.6

= 25°C, I = 10.4A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min Typ Max Min Typ Max Units

Parameter

Test Conditions

Drain-to-Source Voltage

—

480

—

480

Applied drain-to-source voltage during

gamma-dot

DSS

—

6.4

—

6.4

2.3

137

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

(µm)

Bias

(V)

Bias

(V)

Ion

(MeV/mg/cm²)

(ions/cm²)

1x 10⁵

~28

480

-5

www.irf.com

IRHM2C50SE, IRHM7C50SE Devices

Pre-Irradiation

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

VGS

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

10.4A

T = 25 C

T = 150 C

= 50V

20µs PULSE WIDTH

= 12V

0.1

10 11

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHM2C50SE, IRHM7C50SE Devices

5000

= 10.4A

= 0V,

f = 1MHz

C SHORTED

= 480V

= 300V

= 120V

= C + C

iss

gd ,

= C

rss

= C + C

4000

3000

2000

1000

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

120

150

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.2

0.1

0.6

1.0

1.4

1.8

100

1000

10000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

www.irf.com

IRHM2C50SE, IRHM7C50SE Devices

Pre-Irradiation

R_D

V_DS

V_GS

12V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T =P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHM2C50SE, IRHM7C50SE Devices

1200

TOP

4.7A

6.6A

BOTTOM 10.4A

1000

800

600

400

200

15V

DRIVER

D S

D.U.T

D D

1202VV

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHM2C50SE, IRHM7C50SE Devices

Pre-Irradiation

ꢀTotal Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019, condition A.

Refer to current HEXFET reliability report.

Total Dose Irradiation with V Bias.

(pre-irradiation)

@ Starting T = 25°C,

= 0.8 rated BV

= [0.5 L

(I ²) ], V_DD=50V

applied and V

DSS

Peak I = 10.4A, V

* * L

= 0 during irradiation per

=12 V, 25 ≤ R ≤ 200Ω

MlL-STD -750, method 1019, condition A.

≤ 10.4A, di/dt ≤ 400A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS J

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

All Pre-Irradiation and Post-Irradiation test

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions — TO-254AA

.12

( .005 )

13.84

13.59

(

.545

.535

)

-B-

6.60

6.32

(

.260

.249

)

3.78

3.53

(

.149

.139

)

1.27

1.02

(

.050

.040

)

-A-

20.32

20.07

(

.800

.790

)

17.40

16.89

(

.685

.665

)

13.84

13.59

(

.545

.535

)

LEG END

2 3

CO LLEC TOR

EM ITTER

G ATE

31.40

30.39

(

1.235

1.199

)

-C-

1.14

0.89

(

.045

.035

)

3.81

(

.150

)

3.81

( .150 )

.50

.25

(

.020

.010

)

LEGEND

1- DRAIN

2- SOURCE

3- GATE

LEGEND

1- DRAIN

2- SOURCE

3- GATE

NOTE S:

1. D IM EN SION IN G

TO LERANC IN G PER AN SI Y14.5M , 1982.

IN M ILLIM ETERS INCH ES ).

2. ALL DIM ENSIO NS AR E SHO W

(

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted,

machined, or have other operations perfomed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/

Data and specifications subject to change without notice. 1/99

www.irf.com

IRHM2C50SED [INFINEON]

相关型号：

IRHM2C50SEDPBF

IRHM2C50SEPBF

IRHM2C50SEU

IRHM2C50SEUPBF

IRHM3054

IRHM3054D

IRHM3054DPBF

IRHM3054PBF

IRHM3054U

IRHM3054UPBF

IRHM3064D

IRHM3064DPBF