IRHM53064D [INFINEON]
Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN;
| 型号： | IRHM53064D |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93792A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57064
60V, N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHM57064
IRHM53064
IRHM54064
IRHM58064
100K Rads (Si) 0.012Ω 35A*
300K Rads (Si) 0.012Ω 35A*
600K Rads (Si) 0.012Ω 35A*
1000K Rads (Si) 0.013Ω 35A*
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
Features:
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low R
and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
DS(on)
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
n
n
n
n
n
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
35*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
35*
140
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
±20
GS
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
25
mJ
V/ns
AR
dv/dt
4.8
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
Lead Temperature
Weight
300 (0.063 in. (1.6 mm from case for10s )
9.3 (Typical )
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
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1
4/10/00
IRHM57064
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.063
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.012
Ω
V
= 12V, I = 35A
GS D
DS(on)
➃
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
42
—
—
—
—
—
4.0
—
V
S ( )
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
> 15V, I
= 35A ➃
DS
I
10
25
= 48V ,V =0V
DS GS
DSS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
140
40
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
V
=12V, I = 35A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= 50V
DS
40
35
t
t
t
t
V
DD
= 30V, I = 35A
D
125
60
50
R
G
= 2.35Ω
ns
Turn-Off Delay Time
FallTime
d(off)
f
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
—
—
—
6300
2300
70
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
GS DS
C
Output Capacitance
pF
C
Reverse Transfer Capacitance
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
35*
140
1.2
S
A
SM
V
T = 25°C, I = 35A, V
= 0V ➃
j
SD
rr
S
GS
Reverse Recovery Time
143
818
ns
T = 25°C, I = 35A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
nC
V
DD
≤ 25V ➃
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
48
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➄➅
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
60
2.0
—
—
—
—
—
4.0
100
60
—
4.0
100
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
➃
1.5
—
—
—
—
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
= 20V
GSS
nA
I
-100
10
0.0061
-100
10
0.0071
V
= -20 V
GSS
GS
I
µA
Ω
V
V
= 48V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
➃
= 12V, I =35A
D
GS
R
DS(on)
➃
—
—
0.012
1.2
—
—
0.013
1.2
Ω
V
= 12V, I =35A
D
GS
V
SD
➃
V
V
= 0V, I = 35A
GS S
1. Part numbers IRHM57064, IRHM53064 and IRHM54064
2. Part number IRHM58064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
39.2
Energy
(MeV)
300
300
2068
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Kr
Xe
Au
37.4
29.2
106
60
46
35
60
46
35
60
35
27
52
25
20
34
15
14
63.3
86.6
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM57064
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
35A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHM57064
20
16
12
8
10000
I
D
= 35A
V
= 0V,
f = 1MHz
C
GS
V
V
V
= 48V
= 30V
= 12V
C
= C + C
SHORTED
ds
DS
DS
DS
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
8000
6000
4000
2000
0
oss
ds
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
40
80
120
160
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
GS
Single Pulse
10ms
100
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHM57064
Pre-Irradiation
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM57064
1250
1000
750
500
250
0
I
D
TOP
16A
22A
15V
BOTTOM 35A
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D D
-
I
A
AS
12V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM57064
Footnotes:
Pre-Irradiation
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➁ V
= 25V, starting T = 25°C, L= 0.8 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 35A, V
= 12V
GS
L
➅ Total Dose Irradiation with V Bias.
➂ I
≤ 35A, di/dt ≤ 265A/µs,
DS
= 0 during
SD
DD
48 volt V
DS
applied and V
GS
V
≤ 60V, T ≤ 150°C
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
B
R 1.52 [.060]
31.40 [1.235]
30.35 [1.195]
1
2
3
1
2
3
B
17.40 [.685]
16.89 [.665]
4.06 [.160]
3.56 [.140]
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
1.14 [.045]
0.89 [.035]
3.81 [.150]
2X
3X
0.36 [.014]
B A
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
PIN ASSIGNMENTS
NOTES:
NOT ES :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA BEFORE LEADFORMING.
4. CONFORMS TO JEDEC OUT LINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 4/00
8
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