IRHM53160UPBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN;
| 型号： | IRHM53160UPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93784E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57160
100V, N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHM57160
IRHM53160
IRHM54160
IRHM58160
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
0.018Ω 35A*
0.018Ω 35A*
0.018Ω 35A*
1000K Rads (Si) 0.019Ω 35A*
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
Features:
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low R
and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
DS(on)
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
n
n
n
n
n
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
35*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
35*
140
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
3.4
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/22/01
IRHM57160
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.013
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.018
Ω
V
= 12V, I = 35A
GS D
➀
DS(on)
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
42
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 35A ➀
DS
V
DS
I
= 80V ,V =0V
DS GS
DSS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
45
V
= 20V
GSS
GSS
GS
nA
nC
V
GS
= -20V
Q
Q
Q
V
=12V, I = 35A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
65
t
t
t
t
35
75
V
= 50V, I = 35A
DD D
V =12V,R = 2.35Ω
GS
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
75
d(off)
35
—
f
L
+ L
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
C
C
C
Input Capacitance
—
—
—
5620
1583
50
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
35*
140
1.2
270
1.9
S
A
SM
V
t
V
ns
µC
T = 25°C, I = 35A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 35A, di/dt ≤100A/µs
j
F
Q
Reverse Recovery Charge
V
≤ 25V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
48
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM57160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
4.0
100
-100
10
100
1.5
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
V
GS
= 20V
GSS
nA
I
—
—
V
= -20 V
GSS
GS
I
—
—
µA
V
= 80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
➀
—
0.013
—
0.014
Ω
V
= 12V, I =35A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.018
1.2
—
—
0.019
1.2
Ω
V
= 12V, I =35A
D
GS
V
SD
➀
V
V
= 0V, I = 35A
GS S
1. Part numbers IRHM57160, IRHM53160 and IRHM54160
2. Part number IRHM58160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2.Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
100
100
100
100
100
100
100
100
80
100
35
25
100
25
—
59.8
82.3
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
-15
-20
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM57160
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
°
T = 25 C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
35A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
5
6
7
8
9
10
11
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHM57160
20
16
12
8
10000
I
D
= 35A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
8000
6000
4000
2000
0
oss
ds
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
30
60
90
120
150
180
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
10µs
°
T = 25 C
100µs
J
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
0ms
V
= 0 V
GS
1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHM57160
Pre-Irradiation
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM57160
1200
1000
800
600
400
200
0
I
D
TOP
16A
22A
15V
BOTTOM 35A
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D D
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM57160
Footnotes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 50V, starting T = 25°C, L= 0.82 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 35A, V
= 12V
GS
L
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤ 35A, di/dt ≤ 330A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
GS
V
≤ 100V, T ≤ 150°C
DS
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
31.40 [1.235]
30.35 [1.195]
1
2
3
1
2
3
B
4.06 [.160]
3.56 [.140]
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
3X
0.36 [.014]
B A
3.81 [.150]
3.81 [.150]
2X
PIN ASSIGNMENTS
0.36 [.014]
B
A
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
NOT ES :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA BEFORE LEADFORMING.
4. CONFORMS TO JEDEC OUT LINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
8
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