IRHM54064 [INFINEON]
RADIATION HARDENED POWER MOSFET; 抗辐射功率MOSFET型号: | IRHM54064 |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET |
文件: | 总8页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢁ
PD - 93792D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57064
60V, N-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHM57064
IRHM53064
IRHM54064
IRHM58064
100K Rads (Si) 0.012Ω 35A*
300K Rads (Si) 0.012Ω 35A*
600K Rads (Si) 0.012Ω 35A*
1000K Rads (Si) 0.013Ω 35A*
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
of low R
and low gate charge reduces the
DS(on)
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Hermatically Sealed
Electically Isolated
n
n
Ceramic Eyelets
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
35*
D
GS
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
35*
140
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
208
W
W/°C
V
D
C
1.67
±20
V
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
1090
35
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20.8
4.8
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6 mm from case for10s )
9.3 (Typical )
* Current is limited by package
For footnotes refer to the last page
07/19/04
IRHM57064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.063
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.012
Ω
V
= 12V, I = 35A
GS D
Ã
DS(on)
2.0
42
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
>= 15V, I
= 35A Ã
DS
I
= 48V ,V =0V
DSS
DS GS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
55
65
35
125
75
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
V
=12V, I = 35A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
= 30V, I = 35A
DD
D
V
=12V, R = 2.35Ω
GS G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6300
2300
70
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
35*
140
1.2
200
818
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 35A, V
= 0V Ã
j
S
GS
T = 25°C, I = 35A, di/dt ≤100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.6
—
48
thJC
thCS
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
2.0
—
—
—
—
—
4.0
100
-100
10
0.0061
60
—
4.0
100
-100
25
0.0071
V
= 0V, I = 1.0mA
DSS
GS D
V
V
1.5
—
—
—
—
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
V
GS
= 20V
GSS
nA
I
V
= -20 V
GSS
GS
I
µA
Ω
V
V
= 48V, V =0V
DSS
DS GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
Ã
= 12V, I = 35A
D
GS
R
DS(on)
Ã
—
—
0.012
1.2
—
0.013
1.2
Ω
V
= 12V, I = 35A
D
GS
V
SD
Ã
—
V
V
= 0V, I = 35A
GS S
1. Part numbers IRHM57064, IRHM53064 and IRHM54064
2. Part number IRHM58064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br
Xe
Au
37.3
63
86.6
285
300
2068
36.8
29
106
60
46
35
60
46
35
60
35
27
60
25
20
40
15
14
70
60
50
40
30
20
10
0
Br
I
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM57064
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
35A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
=12V
GS
20µs PULSE WIDTH
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
6.0
7.0
8.0 9.0 10.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHM57064
20
16
12
8
10000
I
D
= 35A
V
= 0V,
f = 1MHz
C
GS
V
V
V
= 48V
= 30V
= 12V
C
= C + C
SHORTED
ds
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
8000
6000
4000
2000
0
oss
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
40
80
120
160
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
100µs
1ms
J
°
T = 25 C
J
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
2.0
1
0.1
0.0
0.5
1.0
1.5
2.5
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHM57064
Pre-Irradiation
RD
120
100
80
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
V
DS
20
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
(THERMAL RESPONSE)
0.01
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM57064
3000
2400
1800
1200
600
I
D
TOP
15.7A
22A
BOTTOM 35A
15V
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
2
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V
Starting TJ, Junction Temperature (°C)
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM57064
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 1.8mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 35A, V
J
= 12V
GS
L
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ 35A, di/dt ≤ 265A/µs,
DS
= 0 during
48 volt V
applied and V
V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
DD
J
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2004
8
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