IRHM7264SEUPBF [INFINEON]
Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRHM7264SEUPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91393D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM7264SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Product Summary
Part Number
250Volt, 0.11Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds.Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
BVDSS
RDS(on)
ID
IRHM7264SE
250V
0.11Ω
31A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Electrically Isolated
Ceramic Eyelets
Pre-Irradiation
Absolute Maximum Ratings
Parameter
IRHM7264SE
Units
I
D
@ V
= 12V, T = 25°C Continuous Drain Current
31
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
C
19
GS
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
124
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
±20
500
GS
E
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
AS
I
31
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
25
mJ
V/ns
AR
dv/dt
2.5
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
STG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
www.irf.com
1
10/9/98
IRHM7264SE Device
Pre-Irrdiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.32
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
10
—
—
—
—
—
—
—
0.110
0.123
4.5
V
V
= 12V, I = 19A
D
DS(on)
GS
GS
Ω
= 12V, I = 31A
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 19A
DS
DS
I
50
250
V
= 0.8 x Max Rating,V =0V
DSS
DS GS
µA
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
210
50
110
30
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 31A
GS D
= Max Rating x 0.5
g
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
V
gs
DS
gd
d(on)
r
t
t
t
t
V
= 125V, I = 31A,
DD D
Rise Time
Turn-Off Delay Time
130
100
90
R
= 2.35Ω
G
ns
d(off)
f
Fall Time
symbol show-
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET
ing the internal inductances.
L
Internal Drain Inductance
—
D
nH
L
Internal Source Inductance
—
8.7
—
S
C
C
C
Input Capacitance
—
—
—
4000
1300
480
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
31
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
S
A
Pulse Source Current (Body Diode)
124
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
700
16
V
T = 25°C, I = 31A, V
= 0V
j
SD
S
GS
ns
µC
T = 25°C, I = 31A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 50V
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.50
—
°C/W
Junction-to-Ambient
48
Typical socket mount
2
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Radiation Characterstics
IRHM7264SE Device
Radiation Performance of Rad Hard HEXFETs
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 105 Rads (Si) the
only parameter limit change is VGSTh minimum.
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability.The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate voltage of 12 volts per note
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec ( See Table 2 ).
bias condition equal to 80% of the de-
5 and a V
DS
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 105 Rads (Si) are pre-
sented in Table 1, column 1, IRHM7264SE. The val-
ues in Table 1 will be met for either of the two low
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 1. Low Dose Rate ꢀ
IRHM7264SE
Parameter
100K Rads (Si)
Units
Test Conditions
= 0V, I = 1.0mA
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
250
2.0
—
—
4.5
100
-100
50
V
GS
DSS
D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
I
V
= 20V
GSS
GSS
DSS
GS
nA
—
V
= -20V
GS
—
µA
Ω
V
=0.8 x Max Rating, V =0V
DS GS
R
—
0.110
V = 12V, I =19A
GS
D
DS(on)1
On-State Resistance One
V
Diode Forward Voltage
—
1.4
V
T
= 25°C, I = 31A,V
= 0V
GS
SD
C
S
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Parameter
Test Conditions
V
Drain-to-Source Voltage
—
—
200
—
—
200
V
Applied drain-to-source voltage during
gamma-dot
DSS
I
—
—
—
10
16
1.0
—
—
—
—
—
—
10
2.3
120
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
1
Table 3. Single Event Effects
LET (Si)
Fluence
Range
(µm)
V
Bias
(V)
V
Bias
(V)
DS
GS
Ion
(MeV/mg/cm2)
(ions/cm2)
Cu
28
3x 105
~43
250
-5
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3
IRHM7264SE Device
Pre-Irrdiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
100
10
BOTTOM 5.0V
BOTTOM 5.0V
1
0.1
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100
31A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irrdiation
IRHM7264SE Device
20
16
12
8
8000
6000
4000
2000
I
D
= 31A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
= 125V
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
40
80
120
160
200
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Maximum Safe Operating Area
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5
IRHM7264SE Device
Pre-Irrdiation
RD
35
30
25
20
15
10
5
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 8. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 9b. Switching Time Waveforms
1
0.50
0.20
0.1
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
1
0.001
0.00001
0.0001
0.001
0.01
0.1
10
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irrdiation
IRHM7264SE Device
1000
800
600
400
200
0
I
D
TOP
14.A
20.A
BOTTOM 31A
15V
DRIVER
L
V
D S
D.U.T
R
G
+
V
D D
-
I
A
AS
12V
2
t
0.01Ω
p
Fig 11a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 11c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 11b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
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7
IRHM7264SE Device
Pre-Irrdiation
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ꢀTotal Dose Irradiation with V
Bias.
GS
= 0 during
12 volt V
applied and V
GS
DS
Refer to current HEXFET reliability report.
irradiation per MIL-STD-750, method 1019, condition A.
@ V
Starting T = 25°C,
J
Total Dose Irradiation with V Bias.
DD = 50V,
= [0.5 L
(I 2)]
* L
L
DS
(pre-radiation)
E
AS
V
= 0.8 rated BV
*
DS
applied and V
DSS
= 0 during irradiation per
Peak I = 31A, V
= 12V, 25 ≤ R ≤ 200Ω
GS
G
GS
MlL-STD-750, method 1019, condition A.
I
SD
≤ 31A, di/dt ≤ 300A/µs,
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
≤ BV , T ≤ 150°C
DD
DSS
J
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
1
2 3
W
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
3X
3.81
(
.150
)
3.81
( .150 )
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
LEGEND
1- DRAIN
2- SOURCE
3- GATE
NOTE S:
1. D IM EN SION IN G
&
TO LERANC IN G PER AN SI Y14.5M , 1982.
IN M ILLIM ETERS INCH ES ).
2. ALL DIM ENSIO NS AR E SHO W
N
(
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
10/98
8
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