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IRHM7360SED [INFINEON]

Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
IRHM7360SED
型号： IRHM7360SED
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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PD - 91224C  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7360SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
400Volt, 0.20Ω, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate immunity to SEE failure. Addi-  
tionally, under identical pre- and post-radiation test  
conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
BVDSS  
RDS(on)  
ID  
IRHM7360SE  
400V  
0.20Ω  
22A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHM7360SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
22  
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
14  
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
88  
DM  
@ T = 25°C  
P
D
250  
2.0  
W
W/°C  
V
C
V
±20  
500  
22  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
oC  
T
Storage Temperature Range  
Lead Temperature  
STG  
300 (0.063 in. (1.6mm) from  
case for 10 sec.)  
9.3 (typical)  
Weight  
g
www.irf.com  
1
10/13/98  
IRHM7360SE Device  
Pre-Irradiation  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
400  
—
—
—
—
V
V
= 0V, I = 1.0mA  
D
GS  
V/°C Reference to 25°C, I = 1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
0.51  
DSS  
J
D
Voltage  
R
Static Drain-to-Source  
On-State Resistance  
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
—
—
2.5  
6.0  
—
—
—
—
—
—
—
0.20  
0.21  
4.5  
—
V
V
= 12V, I = 14A  
„
D
DS(on)  
GS  
GS  
Ω
= 12V, I = 22A  
D
V
V
V
= V , I = 1.0mA  
GS(th)  
fs  
DS  
GS  
D
Ω
g
S ( )  
V
> 15V, I  
= 14A „  
DS  
DS  
I
50  
250  
V
= 0.8 x Max Rating,V =0V  
DSS  
DS GS  
µA  
—
V
= 0.8 x Max Rating  
DS  
V
= 0V, T = 125°C  
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7  
100  
-100  
185  
35  
100  
28  
V
= 20V  
GS  
GSS  
GSS  
nA  
nC  
V
GS  
= -20V  
Q
Q
Q
V
= 12V, I = 22A  
GS D  
= Max Rating x 0.5  
DS  
g
gs  
gd  
d(on)  
r
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
V
t
t
t
t
V
= 200V, I = 22A,  
DD D  
Rise Time  
Turn-Off Delay Time  
97  
120  
72  
R
G
= 2.35Ω  
ns  
d(off)  
f
FallTime  
symbol show-  
Measured from drain lead,  
6mm (0.25 in) from package  
to center of die.  
Measured from source lead,  
6mm (0.25 in) from package  
to source bonding pad.  
Modified MOSFET  
ing the internal inductances.  
L
Internal Drain Inductance  
—
D
nH  
L
Internal Source Inductance  
—
8.7  
—
S
C
C
C
Input Capacitance  
—
—
—
4000  
1000  
460  
—
—
—
V
= 0V, V  
= 25V  
iss  
GS  
DS  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
oss  
rss  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode)   
—
—
—
—
22  
88  
Modified MOSFET symbol showing the integral  
reverse p-n junction rectifier.  
S
A
SM  
V
t
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
1.4  
720  
14  
V
ns  
µC  
T = 25°C, I = 22A, V  
= 0V „  
j
SD  
rr  
S
GS  
T = 25°C, I = 22A, di/dt ≤ 100A/µs  
j
F
Q
V
≤ 50V „  
RR  
DD  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
R
Junction-to-Case  
Case-to-Sink  
—
—
—
—
0.21  
—
0.50  
—
thJC  
thCS  
thJA  
°C/W  
Junction-to-Ambient  
48  
Typical socket mount  
2
www.irf.com  
Radiation Characterstics  
IRHM7360SE Device  
Radiation Performance of Rad Hard HEXFETs  
dose rate test circuits that are used. Both pre- and  
post-irradiation performance are tested and speci-  
fied using the same drive circuitry and test condi-  
tions in order to provide a direct comparison. It should  
be noted that at a radiation level of 1 x 105 Rads (Si)  
the only parameter limit change is VGSTh minimum.  
International Rectifier Radiation Hardened HEXFETs  
are tested to verify their hardness capability.The hard-  
ness assurance program at International Rectifier  
comprises 3 radiation environments.  
Every manufacturing lot is tested in a low dose rate  
(total dose) environment per MlL-STD-750, test  
method 1019 condition A. International Rectifier has  
imposed a standard gate voltage of 12 volts per note  
High dose rate testing may be done on a special  
request basis using a dose rate up to 1 x 1012 Rads  
(Si)/Sec ( See Table 2 ).  
5 and a V  
bias condition equal to 80% of the  
DS  
device rated voltage per note 6. Post-irradiation lim- International Rectifier radiation hardened HEXFETs  
its of the devices irradiated to 1 x 105 Rads (Si) are have been characterized in heavy ion Single Event  
Effects (SEE) environments. Single Event Effects  
characterization is shown in Table 3.  
presented in Table 1, column 1, IRHM7360SE. The  
values in Table 1 will be met for either of the two low  
Table 1. Low Dose Rate ꢀ†  
IRHM7360SE  
Parameter  
100K Rads (Si)  
Units  
Test Conditions ‰  
Min  
Max  
BV  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage „  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
Static Drain-to-Source „  
400  
2.0  
—
—
4.5  
100  
-100  
50  
V
= 0V, I = 1.0mA  
GS D  
DSS  
V
V
V
= V , I = 1.0mA  
GS(th)  
GS  
DS  
D
I
V
= 20V  
GSS  
GS  
nA  
I
—
V
GS  
= -20V  
GSS  
I
—
—
µA  
Ω
V
=0.8 x Max Rating, V =0V  
DSS  
DS GS  
R
0.20  
V
= 12V, I =14A  
GS  
D
DS(on)1  
On-State Resistance One  
V
SD  
Diode Forward Voltage „  
—
1.4  
V
T
= 25°C, I = 22A,V  
= 0V  
GS  
C
S
Table 2. High Dose Rate ‡  
1011 Rads (Si)/sec 1012 Rads (Si)/sec  
Min Typ Max Min Typ Max Units  
Parameter  
Test Conditions  
V
Drain-to-Source Voltage  
—
—
320  
—
—
320  
V
Applied drain-to-source voltage during  
gamma-dot  
DSS  
I
—
—
20  
6.4  
—
—
—
16  
—
—
—
137  
6.4  
—
—
—
A
Peak radiation induced photo-current  
PP  
di/dt  
2.3 A/µsec Rate of rise of photo-current  
µH Circuit inductance required to limit di/dt  
L
—
1
Table 3. Single Event Effects  
LET (Si)  
Fluence  
Range  
(µm)  
V
Bias  
(V)  
V
Bias  
(V)  
DS  
GS  
Ion  
(MeV/mg/cm2)  
(ions/cm2)  
Cu  
28  
3x 105  
~43  
325  
-5  
www.irf.com  
3
IRHM7360SE Device  
Pre-Irradiation  
100  
100  
10  
1
VGS  
VGS  
15V  
12V  
10V  
9.0V  
8.0V  
7.0V  
6.0V  
TOP  
15V  
12V  
10V  
9.0V  
8.0V  
7.0V  
6.0V  
TOP  
BOTTOM 5.0V  
BOTTOM 5.0V  
10  
5.0V  
1
5.0V  
20us PULSE WIDTH  
20µs PULSE WIDTH  
T = 150oC  
J
°
T = 25 C  
J
0.1  
0.1  
0.1  
0.1  
1
10  
100  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
3.0  
22A
=
I
D
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T = 150oC  
J
10  
T = 25 oC  
J
1
V
= 50V  
DS  
20µs PULSE WIDTH  
V
= 12V  
GS  
0.1  
5.0  
6.2  
7.3  
8.5  
9.7 10.8 12.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature( C)  
J
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
4
www.irf.com  
Pre -Irradiation  
IRHM7360SE Device  
8000  
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
22A  
=
I
D
GS  
C
= C + C  
V
V
V
= 320V  
= 200V  
= 80V  
iss  
gs  
gd ,  
DS  
DS  
DS  
C
= C  
rss  
gd  
C
= C + C  
gd  
oss  
ds  
6000  
4000  
2000  
C
iss  
C
C
oss  
rss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
0
1
0
40  
80  
120  
160 200  
240  
10  
100  
Q
, Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
1000  
100  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
10us  
100us  
1ms  
°
T = 25 C  
J
T
= 25o C  
C
T
= 150o C  
10ms  
J
V
= 0 V  
Single Pulse  
GS  
0.1  
0.2  
1
0.6  
1.0  
1.4  
1.8  
2.2  
10  
100  
1000  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
www.irf.com  
5
IRHM7360SE Device  
Pre-Irradiation  
RD  
25  
20  
15  
10  
5
VDS  
VGS  
12V  
D.U.T.  
RG  
+VDD  
-
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
0
25  
50  
T
75  
100  
125  
150  
, Case Temperature (o C)  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
P
DM  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =t / t  
1
2
2. Peak T = P  
DM  
x Z  
+ T  
C
J
thJC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
6
www.irf.com  
IRHM7360SE Device  
Pre -Irradiation  
1000  
800  
600  
400  
200  
0
I
D
TOP  
10A  
14A  
15V  
BOTTOM 22A  
DRIVER  
L
V
D S  
D.U.T  
R
G
+
V
D D  
-
I
AS  
12V  
20V  
t
0.01Ω  
p
Fig 12a. Unclamped Inductive Test Circuit  
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature( C)  
J
V
(BR )D SS  
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Current Regulator  
Fig 12b. Unclamped Inductive Waveforms  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
Q
G
.3µF  
+
12 V  
V
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
www.irf.com  
7
IRHM7360SE Device  
Pre-Irradiation  
ꢀTotal Dose Irradiation with V  
Bias.  
Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
12 volt V  
applied and V = 0 during  
GS  
DS  
Refer to current HEXFET reliability report.  
irradiation per MIL-STD-750, method 1019 condition A.  
†Total Dose Irradiation with V Bias.  
‚@ V  
starting T = 25°C,  
J
L
DS  
(pre-radiation)  
DD = 50V,  
(I 2)]  
V
= 0.8 rated BV  
E
AS  
= [0.5  
L
* *  
DS  
applied and V = 0 during irradiation per  
GS  
DSS  
Peak I = 22A, V  
= 12V, 25 ≤ R ≤ 200Ω  
G
L
GS  
MlL-STD-750, method 1019 condition A.  
ƒI  
SD  
≤ 22A, di/dt ≤ 120A/µs,  
‡This test is performed using a flash x-ray  
source operated in the e-beam mode (energy  
~2.5 MeV), 30 nsec pulse.  
V
≤ BV  
, T ≤ 150°C  
DSS J  
DD  
Suggested RG = 2.35Ω  
„Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
ˆAll Pre-Radiation and Post-Radiation test  
conditions are identical to facilitate direct  
comparison for circuit applications.  
Case Outline and Dimensions — TO-254AA  
.12  
( .005 )  
13.84  
13.59  
(
(
.545  
.535  
)
)
-B-  
6.60  
6.32  
(
(
.260  
.249  
)
)
3.78  
3.53  
(
(
.149  
.139  
)
)
1.27  
1.02  
(
(
.050  
.040  
)
)
-A-  
20.32  
20.07  
(
(
.800  
.790  
)
)
17.40  
16.89  
(
(
.685  
.665  
)
)
13.84  
13.59  
(
(
.545  
.535  
)
)
1
2 3  
W
31.40  
30.39  
(
(
1.235  
1.199  
)
)
1
2
3
-C-  
1.14  
0.89  
(
(
.045  
.035  
)
)
3X  
3.81  
(
.150  
)
3.81  
( .150 )  
2X  
.50  
.25  
(
(
.020  
.010  
)
)
M
M
C
C
A
M
B
LEGEND  
1- DRAIN  
2- SOURCE  
3- GATE  
LEGEND  
1- DRAIN  
2- SOURCE  
3- GATE  
NOTE S:  
1. D IM EN SION IN G  
&
TO LERANC IN G PER AN SI Y14.5M , 1982.  
IN M ILLIM ETERS INCH ES ).  
2. ALL DIM ENSIO NS AR E SHO W  
N
(
Conforms to JEDEC Outline TO-254AA  
Dimensions in Millimeters and ( Inches )  
CAUTION  
BERYLLIA WARNING PER MIL-PRF-19500  
Package containing beryllia shall not be ground, sandblasted,  
machined, or have other operations performed on them which  
will produce beryllia or beryllium dust. Furthermore, beryllium  
oxide packages shall not be placed in acids that will produce  
fumes containing beryllium.  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice.  
10/98  
8
www.irf.com  

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ETC

IRHM7450DPBF

 Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON

IRHM7450SE

 TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
INFINEON

IRHM7450SED

 Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
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