IRHM7450SE [INFINEON]

TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A); 晶体管N沟道（ BVDSS = 500V ， RDS（ON） = 0.51ohm ，ID = 12A）


型号：	IRHM7450SE
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) 晶体管N沟道（ BVDSS = 500V ， RDS（ON） = 0.51ohm ，ID = 12A）晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1223B

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM7450SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET

BVDSS

RDS(on)

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

IRHM7450SE

500V

0.51Ω

12A

Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

■ Ceramic Eyelets

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHM7450SE

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

1.2

W/K ➄

Gate-to-Source Voltage

Single PulseAvalanche Energy ➁

Avalanche Current➀

±20

500

RepetitiveAvalanche Energy➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

3.5

V/ns

-55 to 150

STG

StorageTemperature Range

Lead Temperature

^oC

(0.063 in. (1.6mm) from

case for 10 sec.)

9.3 (typical)

300

Weight

To Order

Previous Datasheet

IRHM7450SE Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Index

Next Data Sheet

Pre-Radiation

Parameter

Min. Typ. Max. Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

500

—

= 0V, I = 1.0 mA

Reference to 25°C, I = 1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.6

V/°C

DSS

Static Drain-to-Source

On-State Resistance

GateThreshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.5

—

0.51

0.57

4.5

—

250

= 12V, I = 7A

DS(on)

V = 12V, I = 12A

➃

Ω

S ( )

= V , I = 1.0 mA

GS D

> 15V, I = 7A ➃

= 0.8 x Max Rating

GS(th)

Ω

= 0.8 x Max Rating,V

= 0V

DSS

µA

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On DelayTime

RiseTime

Turn-Off Delay Time

FallTime

—

8.7

100

-100

140

100

= 20V

= -20V

GSS

=12V, I = 12A

GS D

V = Max. Rating x 0.5

=250V, I =12A,

d(on)

DD D

R = 2.35Ω

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

Internal Drain Inductance

—

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

Output Capacitance

ReverseTransfer Capacitance

—

4000

330

—

= 0V, V

= 25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)➀

—

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse RecoveryTime

Reverse Recovery Charge

—

1.6

500

µC

T = 25°C, I = 12A, V

= 0V ➃

T = 25°C, I = 12A, di/dt ≤ 100A/µs

≤ 50V ➃

ForwardTurn-OnTime

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

0.83

thJC

—

48 K/W➄

thJA

RthCS

0.21

—

Typical socket mount

To Order

Previous Datasheet

IRHM7450SE Device

Index

Next Data Sheet

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs

are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si), no change in limits are specified in DC

parameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate ➅ ➆

IRHM7450SE

Parameter

100K Rads (Si)

Units

Test Conditions ➉

min.

max.

Drain-to-Source Breakdown Voltage

GateThreshold Voltage ➃

500

2.0

—

4.5

= 0V, I = 1.0 mA

GS D

DSS

= V , I = 1.0 mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source ➃

100

-100

= 20V

GSS

—

= -20V

GSS

—

µA

= 0.8 x Max Rating, V

= 0V

DSS

—

0.51

Ω

= 12V, I = 7A

DS(on)1

On-State Resistance One

Diode Forward Voltage ➃

—

1.6

T = 25°C, I = 12A,V = 0V

S GS

Table 2. High Dose Rate ➇

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Drain-to-Source Voltage

Min. Typ Max. Min. Typ. Max. Units

Test Conditions

Applied drain-to-source voltage

DSS

—

400

—

400

during gamma-dot

—

133

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects ➈

LET (Si)

Fluence Range

Bias

(V)

400

Bias

(V)

-5

Parameter

Typ.

500

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

DSS

1 x 10⁵

~35

To Order

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IRHM7450SE Device

Index

Next Data Sheet

Radiation Characteristics

➅ Total Dose Irradiation with V

Bias.

= 0 during

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

➆ Total Dose Irradiation with V Bias.

➁ @ V

= 50V, Starting T = 25°C,

(pre-radiation)

= [0.5

= 0.8 rated BV

(I ) [BV

/(BV

DSS

-V )]

DSS DD

applied and V

DSS

= 0 during irradiation per

Peak I = 12A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

➂ I

≤ 12A, di/dt ≤ 130 A/µs,

➇ This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➈ Process characterized by independent laboratory.

➄ K/W = °C/W

➉ All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions -TO254AA

Legend

1 - Drain

2 - Source

3 - Gate

Notes:

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and (Inches)

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. All dimensions are shown in millimeters (inches).

Optional leadforms for outline TO-254

Legend

1 - Drain

2 - Source

3 - Gate

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. All dimensions are shown in millimeters (inches).

3. Leadform is available in either orientation.

Dimensions in Millimeters and (Inches)

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxides packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

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IRHM7450SE [INFINEON]

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