IRHM8054 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔（ TO- 254AA ）
| 型号： | IRHM8054 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90887E
IRHM7054
JANSR2N7394
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM7054
IRHM3054
100K Rads (Si)
300K Rads (Si)
0.027Ω 35*A JANSR2N7394
0.027Ω 35*A JANSF2N7394
IRHM4054
IRHM8054
600K Rads (Si)
1000K Rads (Si)
0.027Ω 35*A JANSG2N7394
0.027Ω 35*A JANSH2N7394
TO-254AA
International Rectifier’s RADHard HEXFET®technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
35*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
30
140
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
1.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
15
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
Lead Temperature
Weight
For footnotes refer to the last page
*Current is limited by package
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1
08/30/04
IRHM7054, JANSR2N7394
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.053
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
12
—
—
—
—
—
—
—
0.027
0.030
4.0
—
25
Ω
V
V
= 12V, I = 30A
D
Ã
DS(on)
GS
GS
= 12V, I = 35A
D
V
g
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
V
> 15V, I
= 30A Ã
DS
V
DS
I
= 48V ,V =0V
DSS
DS GS
µA
—
250
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
60
75
27
100
75
75
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
V
=12V, I = 35A
g
gs
gd
d(on)
r
GS D
V
= 30V
DS
t
t
t
t
V
=30V, I = 35A
DD D
V =12V, R = 2.35Ω
GS
G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4100
2000
560
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
35*
140
1.4
280
2.2
S
SM
SD
rr
A
V
nS
µC
T = 25°C, I = 35A, V
= 0V Ã
j
S
GS
T = 25°C, I = 35A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 50V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.21
0.83
48
—
thJC
thJA
thCS
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM7054, JANSR2N7394
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
—
4.0
100
-100
25
60
1.25
—
—
—
—
4.5
100
-100
50
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
2.0
—
—
—
—
= V , I = 1.0mA
GS
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
I
V
= -20 V
GSS
GS
I
µA
Ω
V
V
= 48V, V = 0V
GS
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
Ã
0.027
—
0.04
= 12V, I = 30A
D
R
DS(on)
Ã
—
—
0.027
1.4
—
—
0.04
1.4
Ω
V
= 12V, I = 30A
D
GS
V
SD
Ã
V
V
= 0V, I = 35A
GS S
1. Part numbers IRHM7054 ( JANSR2N7394 ), IRHM3054 ( JANSF2N7394 ), IRHM4054 ( JANSG2N7394 )
2. Part number IRHM8054 ( JANSH2N7394 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(µm)
32.8
39
VDS(V)
MeV/(mg/cm2)) (MeV)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
I
Br
59.9
36.8
345
305
60
40
60
35
45
30
40
25
30
20
80
60
40
20
0
BR
I
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7054, JANSR2N7394
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
100
5.0V
20µs PULSE WIDTH
J
20µs PULSE WIDTH
°
5.0V
°
T = 25 C
T = 150 C
J
10
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
50A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= 25V
DS
V
=12V
20µs PULSE WIDTH
GS
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHM7054, JANSR2N7394
8000
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
GS
I
D
= 35A
C
= C + C
gs
C
SHORTED
iss
V
V
= 48V
= 30V
DS
DS
C
= C
gd
= C + C
ds gd
rss
C
oss
6000
4000
2000
0
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
100
10
1
°
T = 150 C
100us
J
1ms
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
3.4
1
0.4
1.0
1.6
2.2
2.8
4.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHM7054, JANSR2N7394
Pre-Irradiation
RD
VDS
50
LIMITED BY PACKAGE
VGS
D.U.T.
RG
40
30
20
10
0
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
10%
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM7054, JANSR2N7394
1200
1000
800
600
400
200
0
I
D
TOP
16A
22A
15V
BOTTOM 35A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig12b. UnclampedInductiveWaveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7054, JANSR2N7394
Foot Notes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á V
= 25V, starting T = 25°C, L= 0.9mH
12 volt V applied and V
DD
Peak I = 35A, V
J
GS DS
=12V
irradiation per MIL-STD-750, method 1019, condition A.
L
GS
 I
SD
≤ 35A, di/dt ≤ 150A/µs,
Å Total Dose Irradiation with V Bias.
DS
= 0 during
V
≤ 60V, T ≤ 150°C
48 volt V
DS
applied and V
GS
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/04
8
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