IRHM8064DPBF [INFINEON]

Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;


型号：	IRHM8064DPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN 晶体晶体管
文件：	总4页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1564

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM7064

IRHM8064

N-CHANNEL

MEGA RAD HARD

60 Volt, 0.021Ω, MEGA RAD HARD HEXFET Product Summary

Part Number

IRHM7064

IRHM8064

BVDSS

60V

RDS(on)

0.021Ω

International Rectifier’s RAD HARD technology HEXFETs

demonstrate virtual immunity to SEE failure.Addition-

ally, underidenticalpre- and post-radiation test condi-

tions, International Rectifier’s RAD HARD HEXFETs

retainidenticalelectrical specifications up to 1 x 10⁵Rads

(Si) total dose. No compensation in gate drive circuitry is

required. These devices are also capable of surviving

transient ionization pulses as high as 1 x 10¹²Rads (Si)/

Sec, and return to normal operation within a few micro-

seconds. Since the RAD HARD process utilizes Interna-

tional Rectifier’s patented HEXFET technology, the user

can expect the highest quality and reliability in the indus-

try.

35A*

60V

Features:

■ Radiation Hardened up to 1 x 10⁶Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

■ Ceramic Eyelets

RADHARDHEXFETtransistorsalsofeatureallofthewell-

establishedadvantagesofMOSFETs, suchasvoltagecon-

trol, veryfastswitching, easeofparallelingandtemperature

stability of the electrical parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Absolute Maximum Ratings

Pre-Radiation

Parameter

IRHM7064, IRHM8064

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

@ V

= 12V, T = 100°C Continuous Drain Current

35*

Pulsed Drain Current➀

Max. Power Dissipation

284

@ T = 25°C

250

W/K ➄

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single PulseAvalanche Energy ➁

Avalanche Current➀

±20

500

RepetitiveAvalanche Energy➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

4.5

V/ns

-55 to 150

^oC

STG

StorageTemperature Range

LeadTemperature

Weight

300 (0.063 in (1.6mm) from case for 10 sec.)

9.3 (typical)

To Order

Notes: See page 4

*Current is limited by pin diameter

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Pre-Radiation

IRHM7064, IRHM8064 Devices

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.048

DSS

Static Drain-to-Source

—

0.021

V = 12V, I = 35A

GS D

DS(on)

On-State Resistance

Ω

GateThreshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

S ( )

= V , I = 1.0 mA

GS D

GS(th)

Ω

> 15V, I

= 35A ➃

= 0.8 x Max Rating,V

= 0V

DSS

DS GS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On DelayTime

Rise Time

Turn-Off Delay Time

Fall Time

—

8.7

100

-100

260

120

= 20V

= -20V

GSS

=12V, I = 35A

GS D

V = Max. Rating x 0.5

= 30V, I = 35A,

DD D

R = 2.35Ω

d(on)

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

Internal Drain Inductance

—

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

7400

3200

540

—

= 0V, V

= 25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

284

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse RecoveryTime

Reverse Recovery Charge

—

3.0

220

1.1

µC

T = 25°C, I = 35A, V

= 0V ➃

T = 25°C, I = 35A, di/dt ≤ 100A/µs

≤ 50V ➃

ForwardTurn-OnTime

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

0.50

thJC

K/W➄

Junction-to-PC board

Case-to-Sink

—

thJ-PCB

thCS

0.21

typical socket mount

To Order

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IRHM7064, IRHM8064 Devices

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier

uses two radiation environments.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si), no change in limits are specified in DC pa-

rameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special re-

quest basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1, column

1, IRHM7064. The values inTable 1 will be met for ei-

ther of the two low dose rate test circuits that are

used.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate ➅ ➆

IRHM7064 IRHM8064

100K Rads (Si) 1000K Rads (Si) Units

Parameter

Test Conditions ➉

min.

100

2.0

—

max.

min. max.

Drain-to-Source Breakdown Voltage

GateThreshold Voltage ➃

—

100

1.25

—

4.5

= 0V, I = 1.0 mA

GS D

DSS

4.0

= V , I = 1.0 mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source ➃

100

-100

100

-100

= 20V

GSS

—

= -20V

GSS

—

µA

= 0.8 x Max Rating, V

= 0V

DSS

—

0.021

—

0.029

Ω

= 12V, I = 35A

DS(on)1

On-State Resistance One

Diode Forward Voltage ➃

—

3.0

—

3.0

= 25°C, I = 35A,V = 0V

Table 2. High Dose Rate ➇

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min. Typ Max. Min. Typ. Max. Units

Parameter

Test Conditions

Applied drain-to-source voltage

DSS

Drain-to-Source Voltage

—

during gamma-dot

—

0.1

140

800

—

0.8

140

160

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects ➈

LET (Si)

Fluence Range

Bias

(V)

Bias

(V)

-5

Parameter

Typ.

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~41

DSS

To Order

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IRHM7064, IRHM8064 Devices

Radiation Characteristics

➅ Total Dose Irradiation with V

Bias.

= 0 during

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

+12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

➆ Total Dose Irradiation with V Bias.

➁ @ V

= 25V, Starting T = 25°C,

(pre-radiation)

= [0.5

(I ²) [BV

/(BV

DSS

-V )]

= 0.8 rated BV

applied and V

DSS

= 0 during irradiation per

DSS DD

Peak I = 35A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

➂ I

≤ 35A, di/dt ≤ 170 A/µs,

➇ This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS

Suggested RG = 2.35Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➈ Process characterized by independent laboratory.

➄ K/W = °C/W

➉ All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions – TO-254AA

Conforms to JEDEC Outline TO-254AA

Legend:

1 - Drain

2 - Source

3 - Gate

Notes:

1. Dimensioning andTolerancing per

ANSIY14.5M-1982

2. All dimensions are shown in millimeters (inches).

3. Leadform is available in either orientation.

Optional leadforms for outline TO-254

CAUTION

BERYLLIAWARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, ma-

chined, or have other operations performed on them which will pro-

duce beryllia or beryllium dust. Furthermore, beryllium oxides pack-

ages shall not be placed in acids that will produce fumes containing

beryllium.

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IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

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http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

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IRHM8064DPBF [INFINEON]

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