IRHM8160 [INFINEON]
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR; 重复性雪崩和dv / dt额定HEXFET晶体管
| 型号： | IRHM8160 |
| 厂家： | 
Infineon |
| 描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| 文件： | 总8页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R
E
F
:
M
I
L
-
P
R
F
-
1
9
5
0
0
/
6
6
3
Absolute Maximum Ratings
Parameter
PD - 91331C
IRHM7160
JANSR2N7432
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
®
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM7160
IRHM3160
IRHM4160
IRHM8160
100K Rads (Si) 0.045Ω 35*A JANSR2N7432
300K Rads (Si) 0.045Ω 35*A JANSF2N7432
600K Rads (Si) 0.045Ω 35*A JANSG2N7432
1000K Rads (Si) 0.045Ω 35*A JANSH2N7432
TO-254AA
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
35*
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
35*
201
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
P
@ T = 25°C
C
250
W
W/°C
V
D
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
7.3
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
Lead Temperature
Weight
g
*Current limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
8/14/01
IRHM7160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
V
V
= 0V, I = 1.0mA
D
GS
∆BV
/∆T Temperature Coefficient of Breakdown
0.107
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
R
Static Drain-to-Source On-State
Resistance
0.045
Ω
V = 12V, I =35A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
16
4.0
V
V
= V , I = 1.0mA
D
GS(th)
DS
GS
> 15V, I
Ω
g
S ( )
V
DS
V
= 35A ➀
fs
DS
= 80V ,V =0V
I
25
DSS
DS GS
V
µA
250
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
6.8
100
-100
310
53
V
= 20V
GS
= -20V
GSS
GSS
nA
nC
V
GS
Q
Q
Q
V
=12V, I =35A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
V
= 50V
DS
110
35
t
t
t
t
V
= 50V, I =35A
D
DD
150
150
130
V
=12V, R = 2.35Ω
GS G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
+ L
Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires
S
D
nH
internally
bonded from Source Pin to Drain Pad
C
C
Input Capacitance
5300
1600
350
V
= 0V, V = 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Diode Ratings and Characteristics
Min Typ Max Units
Parameter
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
35*
140
1.8
S
A
SM
V
V
T = 25°C, I = 35A, V
j
= 0V ➀
GS
SD
S
t
Reverse Recovery Time
520
6.1
nS
µC
T = 25°C, I = 35A, di/dt ≤ 100A/µs
j
F
rr
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
*Current limited by pin diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
0.50
48
thJC
thJA
thCS
°C/W
Typical socket mount
0.21
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
2
Parameter
100 KRads(Si)
300 - 1000K Rads (Si) Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
100
2.0
100
1.25
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
4.0
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➀
100
-100
25
100
-100
25
V
= 20V
GS
GSS
nA
I
V
= -20 V
GS
GSS
I
µA
V
=80V, V
DS
=0V
GS
DSS
R
0.045
0.062
Ω
V
= 12V, I =35A
D
GS
DS(on)
DS(on)
SD
On-State Resistance (TO-3)
R
Static Drain-to-Source" ➀
On-State Resistance (TO-254AA)
Diode Forward Voltage" ➀
0.045
1.8
0.062
1.8
Ω
V
= 12V, I =35A
D
GS
V
V
V
= 0V, I = 35A
GS S
1. Part numbers IRHM7160 (JANSR2N7432)
2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
2
MeV/(mg/cm ))
Energy
(MeV)
Range
VDS(V)
µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
Cu
Br
28
285
305
43
39
100
100
100
90
100
70
80
50
60
36.8
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7160
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
100
10
1
5.0V
10
20µs PULSE WIDTH
20µs PULSE WIDTH
5.0V
°
T = 25 C
J
°
T = 150 C
J
1
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
50A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=12V
GS
1
5
6
V
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHM7160
10000
8000
6000
4000
2000
20
16
12
8
V
= 0V,
f = 1MHz
GS
I
D
= 35A
V
V
V
= 80V
DS
DS
DS
C
= C + C
C
SHORTED
iss
gs
gd , ds
= 50V
= 20V
C
= C
gd
rss
C
= C + C
oss
ds
gd
C
iss
C
oss
rss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
40
80
120
160
200
240
280
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
J
V
= 0 V
Single Pulse
GS
2.0
1
1
0.4
0.8
1.2
1.6
2.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHM7160
Pre-Irradiation
60
50
40
30
20
10
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
r
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
SINGLE PULSE
0.01
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM7160
1400
1200
1000
800
600
400
200
0
I
D
TOP
9.8A
15V
14A
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7160
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
DD
= 25V, starting T = 25°C, L=0.82mH
J
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 35A, V
L
=12V
GS
➀➀Total Dose Irradiation with V Bias.
80 volt V applied and V
DS GS
irr adiation per MlL-STD-750, method 1019, condition A.
➀➀ I
SD
≤ 35A, di/dt ≤ 100A/µs,
DS
= 0 during
V
DD
≤ 100V, T ≤ 150°C
J
Case Outline and Dimensions TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
-B-
6.60 ( .260 )
6.32 ( .249 )
3.78 ( .149 )
3.53 ( .139 )
-A-
1.27 ( .050 )
1.02 ( .040 )
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
13.84 ( .545 )
13.59 ( .535 )
LEGEND
1 - COLL
31.40 ( 1.235 )
30.39 ( 1.199 )
2 - EMIT
3 - GATE
1
2
3
-C-
1.14 ( .045 )
3X
3.81 ( .150 )
0.89 ( .035 )
3.81 ( .150 )
2X
.50 ( .020 )
.25 ( .010 )
M
M
C
C
A
M
B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
8
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