IRHM9250SCSPBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
| 型号： | IRHM9250SCSPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91299D
IRHM9250
JANSR2N7423
200V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
REF: MIL-PRF-19500/662
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on) ID
0.315Ω -14A
0.315Ω -14A
QPL Part Number
JANSR2N7423
JANSF2N7423
IRHM9250
100K Rads (Si)
300K Rads (Si)
IRHM93250
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-14
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-9.0
-56
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-14
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
-41
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
2/19/03
IRHM9250
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.24
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
Ω
V
= -12V, I = -9.0A
DS(on)
GS D
GS
➀
V
= -12V, I = -14A
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
4.0
—
V
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -9.0A ➀
DS
V
DS
I
-25
= -160V ,V =0V
GS
DSS
DS
µA
—
-250
V
= -160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
200
45
V
= -20V
GSS
GSS
GS
nA
nC
V
= 20V
GS
Q
Q
Q
V
=-12V, I = -14A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
DS
= -100V
85
60
t
t
t
t
V
= -100V, I = -14A
DD D
V = -12V, R = 2.35Ω
GS
240
225
220
—
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
+ L
Total Inductance
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S
D
nH
C
Input Capacitance
—
—
—
4200
690
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
160
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-14
-56
-3.6
775
7.2
S
A
SM
V
V
T = 25°C, I = -14A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = -14A, di/dt ≤ -100A/µs
j
rr
RR
F
V
DD
≤ -50V ➀
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
R
thCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.83
48
°C/W
Typical socket mount
0.21
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHM9250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-200
-2.0
—
—
-200
-2.0
—
—
-5.0
-100
100
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
-4.0
-100
100
-25
= V , I = -1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
—
—
V
GSS
GS
I
—
—
-25
µA
V
=-160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
➀
—
0.315
—
0.315
Ω
V
= -12V, I =-9.0A
D
GS
GS
GS
DS(on)
DS(on)
SD
R
➀
—
—
0.315
-3.6
—
—
0.315
-3.6
Ω
V
= -12V, I =-9.0A
D
V
➀
V
V
= 0V, I = -14A
S
1. IRHM9250 (JANSR2N7423)
2. IRHM93250(JANSF2N7423)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V
-200
@VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
28
285
305
43
39
-200
-200
-200
-160
200
-75
—
—
36.8
-200
-250
-200
-150
-100
-50
Cu
Br
0
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHM9250
Pre-Irradiation
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
10
10
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
-14A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
V
= -112V
GS
20µs PULSE WIDTH
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7 8
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHM9250
20
16
12
8
8000
I
D
= -14 A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
-
= 160V
V
V
V
iss
gs
gd ,
gd
DS
DS
DS
C
= C
gd
-
= 100V
rss
-
C
= C + C
= 40V
oss
ds
6000
4000
2000
0
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
100
150
200
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
°
10
T = 25 C
J
100us
1ms
1
°
= 25 C
T
10ms
C
°
T
= 150 C
J
V
= 0 V
GS
3.0
Single Pulse
0.1
0.0
1
0.5
1.0
1.5
2.0
2.5
3.5
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHM9250
Pre-Irradiation
RD
15
12
9
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
x Z + T
thJC C
J
DM
0.01
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHM9250
1200
1000
800
600
400
200
0
I
L
D
V
D S
TOP
-6.3A
-8.9A
BOTTOM -14A
D .U .T
R
G
V
D D
A
I
A S
D R IV ER
-
VGS
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
Q
G
-
12V
.3µF
-
12 V
-
V
Q
+
DS
GS
GD
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHM9250
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -50V, starting T = 25°C, L=5.1mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = -14A, V
=-12V
GS
L
➀ Total Dose Irradiation with V Bias.
➀ I
≤ -14A, di/dt ≤ -600A/µs,
DS
= 0 during
SD
DD
-160 volt V
applied and V
V
≤ -200V, T ≤ 150°C
DS
GS
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
www.irf.com
相关型号：
IRHM9250U
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN
INFINEON
IRHM93064U
Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM93064UPBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM93130D
Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRHM93130DPBF
Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRHM93130UPBF
Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明