IRHMB54064PBF [INFINEON]
Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN;
| 型号： | IRHMB54064PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-96972
RADIATION HARDENED
IRHMB57064
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
60V5, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHMB57064 100K Rads (Si) 0.006Ω
IRHMB53064 300K Rads (Si) 0.006Ω
IRHMB54064 600K Rads (Si) 0.006Ω
IRHMB58064 1000K Rads (Si) 0.006Ω
ID
45A*
45A*
45A*
45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
of low R
and low gate charge reduces the
DS(on)
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
45*
45*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
D
208
W
W/°C
V
C
1.67
±20
V
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
824
mJ
A
AS
I
45
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20
mJ
V/ns
AR
dv/dt
4.3
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05
IRHMB57064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.067
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.006
Ω
V
= 12V, I = 45A Ã
D
DS(on)
GS
2.0
45
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
= 15V, I
= 45A Ã
DS
DS
DS
I
V
= 48V ,V
= 0V
DSS
GS
= 48V,
µA
—
V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
55
65
35
150
75
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 45A
g
gs
gd
d(on)
r
GS D
V
= 30V
DS
t
t
t
t
V
DD
= 30V, I = 45A
D
V
=12V, R = 2.35Ω
GS G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
5640
2410
105
—
—
—
—
V
= 0V, V
= 25V
f = 100KHz
iss
GS DS
pF
oss
rss
g
R
1.04
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
170
760
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 45A, V
= 0V Ã
j
S
GS
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHMB57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance (Low-Ohmic TO-254)
60
2.0
—
—
—
—
4.0
100
-100
10
0.0061
60
1.5
—
—
—
—
4.0
100
-100
25
0.0071
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
I
V
GS
= 20V
GSS
nA
V
GS
= -20 V
GSS
I
µA
Ω
V
V
= 48V, V =0V
DSS
DS GS
R
DS(on)
—
—
=12V, I =45A
D
GS
GS
GS
R
DS(on)
—
—
0.0060
1.2
—
—
0.0070
1.2
Ω
V
= 12V, I =45A
D
V
SD
Diode Forward Voltage
Ã
V
V
= 0V, I = 45A
S
1. Part numbers IRHMB57064 , IRHMB53064 and IRHMB54064
2. Part number IRHMB58064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br
Xe
Au
37.3
63
86.6
285
300
2068
36.8
29
106
60
46
35
60
46
35
60
35
27
60
25
20
40
15
14
70
60
50
40
30
20
10
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHMB57064
Pre-Irradiation
1000
100
10
1000
100
10
VGS
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
VGS
TOP
TOP
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
BOTTOM 4.0V
4.0V
1
4.0V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
I
= 45A
D
T
= 150°C
J
T
= 25°C
J
1
V
= 25V
DS
60µs PULSE WIDTH
V
= 12V
GS
0.1
4
4.5
V
5
5.5
6
6.5
7
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHMB57064
14000
20
16
12
8
f = 1 MHz
V
= 0V,
GS
V
V
V
= 48V
DS
DS
DS
C
= C + C , C SHORTED
I
= 45A
iss
gs gd ds
D
= 30V
= 12V
12000
10000
8000
6000
4000
2000
0
C
= C
gd
rss
C
= C + C
oss
ds gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
, Drain-to-Source Voltage (V)
100
0
20 40 60 80 100 120 140 160
Total Gate Charge (nC)
V
Q
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
100µs
1ms
J
= 25°C
T
J
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHMB57064
Pre-Irradiation
RD
160
120
80
40
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
P
DM
t
1
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMB57064
2000
1600
1200
800
400
0
I
D
20A
15V
TOP
28.5A
BOTTOM 45A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMB57064
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á V
= 25V, starting T = 25°C, L= 0.81 mH
J
12 volt V
applied and V
DD
Peak I = 45A, V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
= 12V
L
GS
 I
≤ 45A, di/dt ≤ 390A/µs,
Å Total Dose Irradiation with V
Bias.
SD
DD
DS
= 0 during
V
≤ 60V, T ≤ 150°C
48 volt V
applied and V
J
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — Tabless - Low-Ohmic TO-254AA
0.13 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
A
13.84 [.545]
13.59 [.535]
B
1
2
3
C
0.84 [.033]
MAX.
17.40 [.685]
12.95 [.510]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOT ES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2005
8
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