IRHMS63160 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA); 抗辐射功率MOSFET直通孔（低电阻TO- 254AA ）
| 型号： | IRHMS63160 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 文件： | 总8页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94723C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67160
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHMS67160 100K Rads (Si) 0.011Ω 45A*
IRHMS63160 300K Rads (Si) 0.011Ω 45A*
Low-Ohmic
TO-254AA
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
45*
45*
D
GS
GS
C
= 12V, T = 100°C Continuous Drain Current
A
D
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
D
208
W
W/°C
V
C
1.67
±20
V
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
512
mJ
A
AS
I
45
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20.8
6.3
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
05/17/07
IRHMS67160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.12
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.011
Ω
V
= 12V, I = 45A Ã
DS(on)
GS D
2.0
45
—
—
—
—
—
4.0
—
10
25
V
S
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
GS
D
g
= 25V, I
= 45A Ã
DS
I
V
= 80V ,V =0V
GS
DSS
DS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
60
80
35
125
75
20
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
=12V, I = 45A
g
gs
gd
d(on)
r
GS
D
V
DS
= 50V
t
t
t
t
V
V
= 50V, I = 45A
DD
GS
D
=12V, R = 2.35Ω
G
ns
d(off)
f
L
S
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
8877
1600
20.5
1.05
—
—
—
—
V
= 0V, V
= 25V
f = 100KHz
iss
GS DS
pF
oss
rss
g
R
Ω
f = 0.71MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
500
6.4
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 45A, V
= 0V Ã
j
S
GS
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHMS67160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
100
2.0
—
—
—
—
4.0
100
-100
10
V
GS
= 0V, I = 1.0mA
DSS
D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
I
V
GS
= 20V
GSS
nA
µA
V
= -20V
GS
GSS
I
V
V
= 80V, V = 0V
GS
DSS
DS
R
DS(on)
On-State Resistance (TO-3)
Diode Forward Voltage
—
—
0.011
1.2
Ω
V
= 12V, I = 45A
D
GS
V
SD
V = 0V, I = 45A
GS
D
1. Part numbers IRHMS67160 and IRHMS63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
@VGS= @VGS=
@VGS= @VGS= @VGS= @VGS= @VGS=
(MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-19V
-20V
Br
I
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
-
100
30
-
100
100
40
-
-
-
-
-
Au
-
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS67160
Pre-Irradiation
1000
1000
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
10
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100
10
45A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
s PULSE WIDTH
0µ
2
V
=12V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
5.5
6
6.5
7
7.5
8
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHMS67160
14000
20
16
12
8
100KHz
V
= 0V,
f =
I
D
= 45A
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C + C
gs
C
SHORTED
iss
gd , ds
C
= C
gd
= C + C
ds
12000
10000
8000
6000
4000
2000
0
rss
C
oss
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
40
80
120
160
200
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100
10
1
T
= 25°C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
10ms
GS
1.0
0.2
0.4
V
0.6 0.8
1.0 1.2
1.4
1.6
0.1
1
10
100
1000
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHMS67160
Pre-Irradiation
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
P
DM
t
1
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS67160
1200
1000
800
600
400
200
0
I
D
15V
TOP
BOTTOM
20A
28.5A
45A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMS67160
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 0.51 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 45A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 45A, di/dt ≤ 650A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions —Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
6.60 [.260]
3.78 [.149]
3.53 [.139]
13.59 [.535]
6.32 [.249]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
C
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2007
8
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相关型号：
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Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
INFINEON
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