IRHMS63260 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA); 抗辐射功率MOSFET直通孔（低电阻TO- 254AA ）
| 型号： | IRHMS63260 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94667A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67260
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHMS67260 100K Rads (Si) 0.029Ω 45A*
IRHMS63260 300K Rads (Si) 0.029Ω 45A*
IRHMS64260 600K Rads (Si) 0.029Ω 45A*
IRHMS68260 1000K Rads (Si) 0.029Ω 45A*
Low-Ohmic
TO-254AA
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Their combination of very low R
and faster
DS(on)
switching times reduces power loss and increases
power density in today’s high speed switching appli-
cations such as DC-DC converters and motor con-
trollers. These devices retain all of the well
established advantages of MOSFETs such as volt-
age control, ease of paralleling and temperature sta-
bility of electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
45*
35
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
D
208
W
W/°C
V
C
1.67
±20
V
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
344
mJ
A
AS
I
45
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
20.8
5.4
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/07/03
IRHMS67260
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.21
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.029
Ω
V
= 12V, I = 35A ➀
D
DS(on)
GS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
40
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
V
= 25V, I
= 35A ➀
DS
DS
DS
I
= 160V ,V =0V
GS
DSS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
240
65
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
=12V, I = 45A
g
gs
gd
d(on)
r
GS D
V
DS
= 100V
60
t
t
t
t
40
V
DD
GS
= 100V, I = 45A
D
60
V
=12V, R = 2.35Ω
G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
70
d(off)
30
—
f
L
+ L
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
—
8045
953
14
—
—
—
—
V
= 0V, V
= 25V
f = 100KHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
pF
oss
rss
g
R
1.1
Ω
f = 0.73MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
S
A
SM
V
t
V
T = 25°C, I = 45A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
640
ns
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
10.5 µC
V
DD
≤ 25V ➀
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHMS67260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.0
200
1.5
—
—
4.0
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➀
On-State Resistance (TO-3)
Static Drain-to-Source On-State ➀
Resistance (Low-Ohmic TO-254)
100
-100
10
100
-100
25
V
GS
= 20V
GSS
nA
—
—
V
= -20 V
GSS
GS
I
—
—
µA
V
= 160V, V =0V
DS GS
DSS
R
DS(on)
—
0.029
—
0.029
Ω
V
= 12V, I =35A
D
GS
GS
GS
R
DS(on)
—
—
0.029
1.2
—
—
0.029
1.2
Ω
V
= 12V, I =35A
D
V
SD
Diode Forward Voltage
➀
V
V
= 0V, I = 45A
S
1. Part numbers IRHMS67260, IRHMS63260 and IRHMS64260
2. Part number IRHMS68260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2)) (MeV)
(µm)
0V
200
200
-5V
200
200
-10V
200
200
-15V
200
200
-17V
170
200
-18V
160
190
-19V
-
-20V
-
Xe
Xe
59
43
825
66
2441
205
180
150
250
200
150
100
50
LET=59
LET=43
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHMS67260
Pre-Irradiation
1000
1000
100
10
VGS
15V
V
GS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
100
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
10
5.0V
µ
60 s PULSE WIDTH
Tj = 25°C
µ
60 s PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
45A
=
I
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
0µ
6
s PULSE WIDTH
V
= 12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
5.5
6
6.5
7
7.5
8
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHMS67260
20
16
12
8
14000
I
D
= 45A
100KHz
V
= 0V,
f =
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C + C
C
SHORTED
iss
gs
gd ,
ds
C
= C
12000
10000
8000
6000
4000
2000
0
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
250
300
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100
10
1
100µs
= 25°C
T
J
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
0ms
V
GS
= 0V
0.1
0.1
1.0
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
DS
, Drain-toSource Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHMS67260
Pre-Irradiation
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
(THERMAL RESPONSE)
0.01
P
DM
0.01
0.001
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS67260
700
600
500
400
300
200
100
0
I
D
TOP
20A
28.5A
BOTTOM 45A
1 5V
DRIVER
L
V
G
DS
D.U.T
.
R
+
V
D D
-
I
A
AS
2
VGS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMS67260
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 25V, starting T = 25°C, L= 0.34 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 45A, V
= 12V
L
GS
➀ Total Dose Irradiation with V
Bias.
➀ I
≤ 45A, di/dt ≤ 840A/µs,
DS
applied and V = 0 during
GS
SD
DD
160 volt V
V
≤ 200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —Low-Ohmic TO-254AA
0.12 [.005]
6.60 [.260]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
6.32 [.249]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
C
4.06 [.160]
3.56 [.140]
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTES:
PIN ASS IGNMENTS
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. ALL DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS T OJEDEC OUTLINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/03
8
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