IRHN3054 [INFINEON]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1); 抗辐射功率MOSFET表面贴装（ SMD - 1 ）


型号：	IRHN3054
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装（ SMD - 1 ）
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PD-90884D

IRHN7054

JANSR2N7394U

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

60V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on)

QPL Part Number

IRHN7054

IRHN3054

100K Rads (Si) 0.027Ω 35A JANSR2N7394U

300K Rads (Si) 0.027Ω 35A JANSF2N7394U

IRHN4054

IRHN8054

500K Rads (Si) 0.027Ω 35A JANSG2N7394U

1000K Rads (Si) 0.040Ω 35A JANSH2N7394U

SMD-1

International Rectifier’s RAD-Hard^TMHEXFET^®

technology provides high performance power

MOSFETs for space applications. This technology

has over a decade of proven performance and

reliability in satellite applications. These devices have

been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

283

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 (5sec)

Package Mounting Surface Temperature

Weight

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

05/15/06

IRHN7054, JANSR2N7394U

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.053

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.027

0.030

4.0

Ω

= 12V, I = 30A

DS(on)

= 12V, I = 35A

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

= V , I = 1.0mA

GS(th)

Ω

—

S ( )

> 15V, I

= 30A Ã

= 48V ,V =0V

DS GS

DSS

µA

—

250

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

100

-100

200

= 20V

GSS

= -20V

=12V, I = 35A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

= 30V

=30V, I = 35A

DD D

V =12V, R = 2.35Ω

100

Turn-Off Delay Time

Fall Time

d(off)

+ L

Total Inductance

—

Measured from the center of

drain pad to center of source pad

Input Capacitance

—

4100

2000

560

—

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

—

283

1.4

280

2.2

T = 25°C, I = 35A, V

= 0V Ã

Reverse Recovery Time

Reverse Recovery Charge

µC

T = 25°C, I = 35A, di/dt ≤ 100A/µs

≤ 50V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

6.6

0.83

—

thJC

thJ-PCB

°C/W Soldered to a 1 inch square clad PC board

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHN7054, JANSR2N7394U

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 500K Rads(Si)

1000K Rads (Si)²

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

2.0

—

4.0

1.25

—

4.5

= 0V, I = 1.0mA

GS D

DSS

= V , I = 1.0mA

DS D

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

100

-100

= 20V

GSS

DSS

—

= -20 V

—

µA

=48V, V

=0V

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-1)

Diode Forward Voltage

—

0.027

—

0.04

Ω

= 12V, I =30A

DS(on)

—

0.027

—

0.04

Ω

= 12V, I =30A

—

1.4

—

1.4

= 0V, I = 35A

1. Part numbers IRHN7054 (JANSR2N7394U) ,IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U)

2. Part number IRHN8054 ( JANSH2N7394U)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

(MeV/(mg/cm²))

36.8

Energy

(MeV)

305

Range

(µm)

VDS (V)

@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

59.9

345

32.8

-5

-10

VGS

-15

-20

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHN7054, JANSR2N7394U

Pre-Irradiation

1000

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

BOTTOM 5.0V

100

5.0V

20µs PULSE WIDTH

5.0V

T = 25 C

T = 150 C

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.5

50A

2.0

1.5

1.0

0.5

0.0

T = 25 C

T = 150 C

= 25V

=12V

20µs PULSE WIDTH

10 11 12

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

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Pre-Irradiation

IRHN7054, JANSR2N7394U

8000

= 0V,

f = 1MHz

C SHORTED

= 35A

= C + C

iss

gd ,

= 48V

= 30V

= C

rss

= C + C

oss

6000

4000

2000

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

160

200

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 25 C

100us

T = 150 C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

3.4

0.4

100

1000

1.0

1.6

2.2

2.8

4.0

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRHN7054, JANSR2N7394U

Pre-Irradiation

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

0.50

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

www.irf.com

Pre-Irradiation

IRHN7054, JANSR2N7394U

1200

1000

800

600

400

200

TOP

16A

22A

15V

BOTTOM 35A

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig12b. UnclampedInductiveWaveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHN7054, JANSR2N7394U

Foot Notes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

= 25V, starting T = 25°C, L=0.82mH

Peak I = 35A, V

irradiation per MIL-STD-750, method 1019, condition A.

=12V

Å Total Dose Irradiation with V Bias.

Â I

≤ 35A, di/dt ≤ 150A/µs,

= 0 during

48 volt V

applied and V

≤ 60V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2006

www.irf.com

IRHN3054 [INFINEON]

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