IRHNA58064 [INFINEON]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）


型号：	IRHNA58064
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 抗辐射功率MOSFET表面贴装（ SMD - 2 ）
文件：	总8页 (文件大小：181K)
中文：	中文翻译
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ꢁ

PD - 91852G

IRHNA57064

JANSR2N7468U2

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

^{REF: MIL}5^{-PRF-19500/673}

SURFACE MOUNT (SMD-2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA57064 100K Rads (Si) 0.0056Ω 75*A JANSR2N7468U2

IRHNA53064 300K Rads (Si) 0.0056Ω 75*A JANSF2N7468U2

IRHNA54064 600K Rads (Si) 0.0056Ω 75*A JANSG2N7468U2

IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

of low R

and low gate charge reduces the power

DS(on)

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

= 12V, T = 100°C Continuous Drain Current

75*

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/09/04

IRHNA57064, JANSR2N7468U2

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.065

—

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.0056

Ω

= 12V, I = 75A

GS D

DS(on)

2.0

—

4.0

—

S ( )

= V , I = 1.0mA

GS(th)

Ω

≥ 15V, I

= 75A Ã

=48V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

4.0

100

-100

160

125

= 20V

= -20V

GSS

=12V, I = 45A

d(on)

GS D

= 30V

= 30V, I = 45A,

DD D

V =12V, R = 2.35Ω

d(off)

+ L

—

Measured from the center of

drain pad to center of source pad

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

6080

2310

—

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

—

75*

300

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.3

200

538

T = 25°C, I = 75A, V

= 0V Ã

T = 25°C, I = 45A, di/dt ≤100A/µs

≤ 25V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

1.6

0.5

—

thJC

thJ-PCB

°C/W

soldered to a 2 square copper-clad board

Note: Corresponding Spice and Saber models are available on International Rectifier web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHNA57064, JANSR2N7468U2

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 600K Rads(Si)¹1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

2.0

—

4.0

100

-100

—

4.0

100

-100

= 0V, I = 1.0mA

DSS

1.5

—

= V , I = 1.0mA

GS(th)

= 20V

= -20 V

GSS

µA

Ω

=48V, V =0V

DSS

DS GS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-2)

Diode Forward Voltage

0.0061

0.0071

= 12V, I =45A

DS(on)

—

0.0056

—

0.0065

Ω

= 12V, I =45A

—

1.3

—

1.3

= 0V, I = 45A

GS S

1. Part numbers IRHNA57064 ( JANSR2N7468U2 ), IRHNA53064 ( JANSF2N7468U2 ) and IRHNA54064 ( JANSG2N7468U2 )

2. Part number IRHNA58064 ( JANSH2N7468U2 )

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS (V)

Ion

LET

Energy

Range

(MeV/(mg/cm²)) (MeV)

(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V

37.3

86.6

285

300

2068

36.8

106

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNA57064, JANSR2N7468U2

Pre-Irradiation

1000

100

1000

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

VGS

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

100

5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

1000

100

75A

T = 25 C

T = 150 C

= 25V

20µs PULSE WIDTH

=12V

5.0

5.5

6.0

6.5

7.0 7.5

8.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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Pre-Irradiation

IRHNA57064, JANSR2N7468U2

10000

= 0V,

f = 1MHz

= 45A

45A

= 48V

= 30V

= C + C

SHORTED

iss

gd ,

= C

rss

= C + C

8000

6000

4000

2000

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

100 125 150 175 200

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

OPERATION IN THIS AREA

LIMITED BY R

(on)

100

100µs

1ms

T = 150 C

100

T = 25 C

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

1.4

0.4

0.6

0.8

1.0

1.2

1.6

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHNA57064, JANSR2N7468U2

Pre-Irradiation

R_D

160

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

120

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

SINGLE PULSE

0.01

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNA57064, JANSR2N7468U2

1000

800

600

400

200

TOP

33.5A

47.4A

75A

15V

BOTTOM

DRIVER

D.U.T

V_GS

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Tempe( raCtu)re

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHNA57064, JANSR2N7468U2

Footnotes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

= 25V, starting T = 25°C, L= 0.18mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 75A, V

= 12V

Å Total Dose Irradiation with V

Bias.

Â I

≤ 45A, di/dt ≤ 196A/µs,

= 0 during

48 volt V

applied and V

≤ 60V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-2

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 06/2004

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