IRHNA597160 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）
| 型号： | IRHNA597160 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 文件： | 总8页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-94493A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA597160
1050V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level Rds(on)
ID
0.049Ω
0.049Ω
IRHNA597160 100K Rads (Si)
IRHNA593160 300K Rads (Si)
-47A
-47A
SMD-2
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm2)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-47
D
D
GS
GS
C
A
I
= -12V, T =100°C Continuous Drain Current
-30
-188
250
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
400
mJ
A
AS
I
-47
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
-10
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
3.3 ( Typical )
For footnotes refer to the last page
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1
03/16/06
IRHNA597160
Pre-Irradiation
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.1
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.049
Ω
V = -12V, I = -30A
GS D
DS(on)
Ã
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
24
—
—
—
—
—
-4.0
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> -15V, I
= -30A Ã
DS
I
-10
-25
V
= -80V ,V =0V
GS
DSS
DS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
170
65
V
= -20V
GSS
GS
nA
nC
V
= 20V
GSS
GS
Q
Q
Q
V
=-12V, I = -47A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= -50V
DS
30
30
t
t
t
t
V
= -50V, I = -47A,
DD D
V =-12V, R = 2.35Ω,
GS
100
70
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
170
—
L
+ L
Total Inductance
Measured from the center of
drain pad to the center of
source pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
6240
1570
115
—
—
—
V
= 0V, V
= -25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-47
-188
-5.0
230
1.6
S
A
SM
V
V
T = 25°C, I = -47A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = -47A, di/dt ≤ -100A/µs
j
rr
RR
F
V
≤ -25V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
1.6
0.50
—
thJC
thJ-PCB
°C/W
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on the International Rectifer Website.
For footnotes refer to the last page
2
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RadiationCharacteristics
IRHNA597160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1
300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
-2.0
—
—
-4.0
-100
100
-10
-100
-2.0
—
—
-5.0
-100
100
-10
V
V
= 0V, I = -1.0mA
DSS
GS D
V
V
= V , I = -1.0mA
GS
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
=-20V
= 20 V
GSS
GS
GS
nA
—
—
V
GSS
I
—
—
µA
V
= -80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Ã
—
0.05
—
0.05
Ω
V
= -12V, I =-30A
D
GS
GS
GS
DS(on)
R
DS(on)
Ã
—
—
0.049
-5.0
—
—
0.049
-5.0
Ω
V
= -12V, I =-30A
D
V
SD
Ã
V
V
= 0V, I = -47A
S
1. Part number IRHNA597160
2. Part number IRHNA593160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
@VGS=20V
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br
I
Au
33.1
30.5
28.4
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-100
-25
59.7
82.3
350
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA597160
Pre-Irradiation
1000
100
10
1000
VGS
VGS
-15V
-12V
-10V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
-15V
TOP
-12V
-10V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
1
BOTTOM -4.0V
BOTTOM -4.0V
-4.0V
-4.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.5
= -47A
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -25V
DS
20µs PULSE WIDTH
V
=-12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4.0
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNA597160
10000
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
-47A
I
D
=
GS
C
= C + C
C
SHORTED
iss
gs
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
8000
6000
4000
2000
0
oss
gd
C
iss
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
0
1
10
100
0
40
80
120
160
200
240
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
100µs
1ms
°
T = 25 C
J
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.0
1.5
3.0
4.5
6.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNA597160
Pre-Irradiation
RD
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
T
75
100
125
150
, Case Temperature (°C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA597160
L
800
600
400
200
0
V
DS
I
D
TOP
-21A
-29.7A
BOTTOM -47A
-
D.U.T
R
G
V
DD
A
+
I
AS
DRIVER
V
-
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNA597160
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
DS
Á
V
= -25V, starting T = 25°C, L=0.36 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = -47A, V
= -12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ -47A, di/dt ≤ - 450A/µs,
DS
applied and V = 0 during
GS
SD
DD
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-2
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Data and specifications subject to change without notice. 03/2006
8
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