IRHNA67160PBF [INFINEON]
Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN;
| 型号： | IRHNA67160PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总8页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94299A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
IRHNA67160
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNA67160 100K Rads (Si)
IRHNA63160 300K Rads (Si)
0.01Ω
0.01Ω
56A*
56A*
SMD-2
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
56*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
56*
224
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
462
mJ
A
AS
I
56
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/07/05
IRHNA67160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.11
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.01
Ω
V
= 12V, I = 56A
GS D
Ã
DS(on)
2.0
60
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
GS
D
Ω
g
= 25V, I
= 56A Ã
DS
I
V
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
100
-100
220
80
80
35
75
75
20
—
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= 12V, I = 56A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
DD
= 50V, I = 56A,
D
V
= 12V, R = 2.35Ω
GS G
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
8690
1600
20
—
—
—
—
V
= 0V, V = 25V
DS
f = 1.0MHz
iss
oss
rss
GS
pF
R
0.45
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
56*
224
1.2
500
5.5
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 56A, V
= 0V Ã
j
S
GS
T = 25°C, I = 56A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
0.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA67160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
—
—
4.0
100
-100
10
V
GS
= 0V, I = 1.0mA
DSS
D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
I
V
GS
= 20V
GSS
nA
µA
V
= -20V
GS
GSS
I
V
= 80V, V =0V
GS
DSS
DS
GS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
—
0.011
Ω
V
= 12V, I = 56A
D
R
DS(on)
—
—
0.010
1.2
Ω
V
= 12V, I = 56A
D
V
SD
Diode Forward Voltage
V
V
= 0V, I = 56A
D
GS
Part numbers IRHNA67160 and IRHNA63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS=
@VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2))
(MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-19V
-20V
Br
I
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
-
100
30
-
100
100
40
-
-
-
-
-
Au
-
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA67160
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
10
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 56A
D
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
V
= 12V
GS
60µs PULSE WIDTH
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
5.5
V
6
6.5
7
7.5
8
8.5
9
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNA67160
14000
20
16
12
8
f = 1 MHz
V
= 0V,
= C
GS
C
C
C
+ C , C
SHORTED
V
V
V
= 80V
= 50V
= 20V
I
= 56A
iss
gs
gd
ds
DS
DS
DS
D
12000
10000
8000
6000
4000
2000
0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
100
150
200
250
300
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µs
1ms
= 25°C
T
J
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
1
1.0
0.1
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNA67160
Pre-Irradiation
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA67160
1000
800
600
400
200
0
I
D
25A
15V
TOP
BOTTOM
35.4A
56A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNA67160
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á
V
= 25V, starting T = 25°C, L= 0.29mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 56A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 56A, di/dt ≤ 640A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2005
8
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