IRHNA7360SESCS [INFINEON]

Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN;


型号：	IRHNA7360SESCS
厂家：	Infineon
描述：	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN
文件：	总8页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91398

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHNA7360SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

400Volt, 0.20Ω, (SEE) RAD HARD HEXFET

Product Summary

International Rectifier’s (SEE) RAD HARD technol-

ogy HEXFETs demonstrate immunity to SEE failure.

These devices are also capable of surviving transient

ionization pulses as high as 1 x 10¹²Rads (Si)/Sec,

and return to normal operation within a few microsec-

onds. Since the SEE process utilizes International

Rectifier’s patented HEXFET technology, the user can

expect the highest quality and reliability in the indus-

try.

Part Number

BVDSS

RDS(on)

IRHNA7360SE

400V

0.20Ω

24A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of par-

alleling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

Surface Mount

Light Weight

Pre-Radiation

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHNA7360SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

300

2.4

W/K ꢀ

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

3.0

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

300 (for 5 sec.)

3.3 (typical)

Package Mounting

Surface Temperature

Weight

www.irf.com

6/22/98

IRHNA7360SE Device

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T

DSS

Temperature Coefficient of Breakdown

Voltage

0.51

V/°C

Static Drain-to-Source

—

2.5

4.0

—

0.20

0.21

4.5

—

= 12V, I = 15A

DS(on)

Ω

On-State Resistance

= 12V, I = 24A

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 15A

250

= 0.8 x Max Rating,V =0V

DSS

DS GS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

0.8

100

-100

250

120

= 20V

= -20V

GSS

= 12V, I = 24A

GS D

= Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

d(on)

= 200V, I = 24A,

DD D

Rise Time

Turn-Off Delay Time

100

120

100

—

= 2.35Ω

d(off)

Fall Time

Measured from drain

lead, 6mm (0.25 in) from

package to center of die.

symbol

showing the internal induc-

tances.

Modified MOSFET

Internal Drain Inductance

Internal Source Inductance

—

2.8

—

Measured from source

lead, 6mm (0.25 in) from

package to source bond-

ing pad.

Input Capacitance

—

4000

1000

460

—

= 0V, V

= 25V

iss

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

—

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

750

T = 25°C, I = 24A, V

= 0V

T = 25°C, I = 24A, di/dt ≤ 100A/µs

µC

≤ 50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

1.6

0.42

—

thJC

K/W ꢀ

soldered to a 2” square copper-clad board

thJ-PCB

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHNA7360SE Device

Radiation Performance of Rad Hard HEXFETs

dose rate test circuits that are used. Both pre- and

post-irradiation performance are tested and specified

using the same drive circuitry and test conditions in

order to provide a direct comparison.It should be noted

that at a radiation level of 1 x 10⁵Rads (Si) the only

parametric limit change is V_GSThminimum.

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability.The hard-

ness assurance program at International Rectifier

comprises three radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per note

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec (See Table 2).

bias condition equal to 80% of the de-

6 and a V

vice rated voltage per note 7. Post-irradiation limits of

the devices irradiated to 1 x 10⁵Rads (Si) are pre-

sented in Table 1, column 1, IRHNA7360SE. The val-

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects char-

ues in Table 1 will be met for either of the two low acterization is shown in Table 3.

Table 1. Low Dose Rate

IRHNA7360SE

Parameter

100K Rads (Si)

Units

Test Conditions

= 0V, I = 1.0mA

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

400

2.0

—

4.5

100

-100

DSS

GS(th)

= V , I = 1.0mA

= 20V

GSS

DSS

—

= -20V

—

µA

Ω

=0.8 x Max Rating, V =0V

DS GS

—

0.20

V = 12V, I =15A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.4

= 25°C, I =24A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min Typ Max Min Typ Max Units

Parameter

Test Conditions

Drain-to-Source Voltage

—

320

—

320

Applied drain-to-source voltage during

gamma-dot

DSS

—

6.4

—

137

6.4

—

Peak radiation induced photo-current

di/dt

2.3 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

(V)

Bias

(V)

Ion

(MeV/mg/cm²)

(ions/cm²)

(µm)

3x 10⁵

~43

325

-5

www.irf.com

IRHNA7360SE Device

Pre-Irradiation

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

BOTTOM 5.0V

5.0V

20us PULSE WIDTH

20µs PULSE WIDTH

T = 150^oC

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

3.0

23A

24A

T = 25 C

T = 150 C

2.5

2.0

1.5

1.0

0.5

0.0

= 50V

20µs PULSE WIDTH

= 12V

0.1

10 11 12

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRHNA7360SE Device

Pre-Irradiation

8000

= 0V,

f = 1MHz

C SHORTED

= 23A

24A

= C + C

= 320V

= 200V

= 80V

iss

gd ,

= C

rss

= C + C

oss

6000

4000

2000

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

120

160 200

240

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

T = 150 C

= 0 V

Single Pulse

10umss

0.1

0.2

100

1000

0.6

1.0

1.4

1.8

2.2

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRHNA7360SE Device

Pre-Irradiation

R_D

V_DS

V_GS

12V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRHNA7360SE Device

Pre-Irradiation

1000

800

600

400

200

TOP

10A

14A

15V

BOTTOM 22A

DRIVER

D S

D.U.T

D D

12V

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test

Circuit

100

125

150

Starting T , Junction Temperature( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHNA7360SE Device

Pre-Irradiation

Total Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019, condition A.

Refer to current HEXFET reliability report.

Total Dose Irradiation with V

Bias.

@ V

starting T = 25°C,

(pre-irradiation)

DD = 50V,

= [0.5 L

(I ²)]

= 0.8 rated BV

applied and V

DSS

= 0 during irradiation per

* * L

Peak I = 24A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019, condition A.

≤ 24A, di/dt ≤ 120A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

All Pre-Irradiation and Post-Irradiation test

ꢀK/W = °C/W

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions — SMD-2

SMD-2

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

6/98

www.irf.com

IRHNA7360SESCS [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E