IRHNA7360SE [INFINEON]

TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A); 晶体管N沟道（ BVDSS = 400V ， RDS（ON） = 0.20ohm ，ID = 24.3A ）


型号：	IRHNA7360SE
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A) 晶体管N沟道（ BVDSS = 400V ， RDS（ON） = 0.20ohm ，ID = 24.3A ）晶体晶体管
文件：	总4页 (文件大小：114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Previous Datasheet

Index

Next Data Sheet

Provisional Data Sheet No. PD-9.1398A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHNA7360SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

400 Volt, 0.20Ω, (SEE) RAD HARD HEXFET

International Rectifier’s (SEE)RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

BVDSS

RDS(on)

IRHNA7360SE

400V

0.20Ω

24.3A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

tion within a few microseconds. Since the SEE pro- n Gamma Dot (Flash X-Ray) Hardened

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

RAD HARD HEXFET transistors also feature all of the n Dynamic dv/dt Rating

well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of parallel-

ing and temperature stability of the electrical param-

eters.

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Lightweight

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHNA7360SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

24.3

15.3

97.2

300

2.4

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

±20

500

24.3

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

4.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 sec.)

Package Mounting Surface Temperature

Weight

300

3.3 (typical)

To Order

Previous Datasheet

Index

Next Data Sheet

Pre-Radiation

IRHNA7360SE Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.45

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.5

4.75

—

0.20

0.21

4.5

—

250

= 12V, I =15.3A

GS D

DS(on)

Ω

S ( )

= 12V, I = 24.3A

GS D

= V , I = 1.0 mA

GS(th)

Ω

> 15V, I

= 15.3A

= 0.8 x Max Rating,V = 0V

DSS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

2.0

100

-100

180

100

—

= 20V

GSS

= -20V

GSS

=12V, I = 24.3A

= Max. Rating x 0.5

= 200V, I =24.3A,

d(on)

DD D

R = 2.35Ω

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

6.5

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

7500

1200

500

—

= 0V, V

= 25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

—

24.3

97.2

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

750

µC

T = 25°C, I = 24.3A, V

= 0V

T = 25°C, I = 24.3A, di/dt ≤ 100A/µs

≤ 50V

ForwardTurn-OnTime

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

Junction-to-PC Board

—

TBD

0.42

—

thJC

thJ-PCB

K/W ꢀ

Soldered to a copper-clad PC board

To Order

Previous Datasheet

Index

Next Data Sheet

IRHNA7360SE Device

Radiation Characteristics

Radiation Performance of Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

are used. Both pre- and post-radiation performance

are tested and specified using the same drive cir-

cuitry and test conditions in order to provide a direct

comparison. It should be noted that at a radiation

level of 1 x 10⁵Rads (Si), no change in limits are

specified in DC parameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1, column

1, IRHNA7360SE. The values in Table 1 will be met

for either of the two low dose rate test circuits that

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate

IRHNA7360SE

100K Rads (Si)

Parameter

Units

Test Conditions

min.

max.

Drain-to-Source Breakdown Voltage

GateThreshold Voltage

400

2.0

—

= 0V, I = 1.0 mA

GS D

DSS

4.5

= V , I = 1.0 mA

GS(th)

DS D

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

100

-100

= 20V

GSS

—

= -20V

GSS

—

µA

= 0.8 x Max Rating, V = 0V

DS GS

DSS

—

0.20

Ω

= 12V, I =15.3A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.35

= 25°C, I = 24.3A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Drain-to-Source Voltage

Min. Typ Max. Min. Typ. Max. Units

Test Conditions

Applied drain-to-source voltage

DSS

—

320

—

320

during gamma-dot

—

6.4

—

137

6.4

—

Peak radiation induced photo-current

di/dt

2.3 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

320

Bias

(V)

-5

Parameter

Typ.

400

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~35

DSS

To Order

Previous Datasheet

Index

Next Data Sheet

IRHNA7360SE Device

Radiation Characteristics

Total Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

Total Dose Irradiation with V Bias.

@ V

= 50V, Starting T = 25°C,

(pre-radiation)

= [0.5

(I ²) [BV

/(BV

DSS

-V )]

DSS DD

= 0.8 rated BV

applied and V

DSS

= 0 during irradiation per

Peak I = 24.3A, V

= 12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

≤ 24.3A, di/dt ≤ 170 A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions - SMD2

LEAD ASSIGNMENTS

DRAIN

GATE

SOURCE

NOTES:

1. DIMENSIONINGAND TOLERANCING PER ANSI Y14.5M-1982

2. CONTROLLING DIMENSION: INCH

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

4 DIMENSION INCLUDES METALLIZATION FLASH

5 DIMENSION DOES NOT INCLUDE METALLIZATION FLASH

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

To Order

IRHNA7360SE [INFINEON]

相关型号：

IRHNA7360SEPBF

IRHNA7360SESCS

IRHNA7360SESCSPBF

IRHNA7460SE

IRHNA7Z60

IRHNA8064

IRHNA8160

IRHNA8260

IRHNA8Z60

IRHNA9064

IRHNA9064PBF

IRHNA9064SCSPBF