IRHNJ3230 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ3230 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93821A
RADIATION HARDENED
POWER MOSFET
IRHNJ7230
200V, N-CHANNEL
SURFACE MOUNT (SMD-0.5) RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ7230
IRHNJ3230
IRHNJ4230
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
0.40Ω
0.40Ω
0.40Ω
0.53Ω
9.4A
9.4A
9.4A
9.4A
IRHNJ8230 1000K Rads (Si)
SMD-0.5
International Rectifier’s RAD-HardTM HEXFET® technology
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
9.4
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
6.0
37
D
GS
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
150
mJ
A
AS
I
5.5
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
16
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
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1
05/16/06
IRHNJ7230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.23
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.40
0.49
4.0
—
V
V
= 12V, I = 6.0A
D
DS(on)
GS
Ã
Ω
V
= 12V, I = 9.4A
GS
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 6.0A Ã
DS
V
DS
I
25
= 160V, V =0V
DS GS
DSS
µA
—
250
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
V
= 20V
GSS
GSS
GS
nA
nC
V
GS
= -20V
Q
Q
Q
V
= 12V, I = 9.4A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
10
V
DS
= 100V
25
35
t
t
t
t
V
DD
= 100V, I = 9.4A,
D
Rise Time
75
R
= 7.5Ω
= 12V
G
ns
Turn-Off Delay Time
Fall Time
70
V
GS
d(off)
f
60
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1200
250
63
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
9.4
37
S
A
SM
V
1.4
460
2.4
V
T = 25°C, I = 9.4A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = 9.4A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
1.67
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ7230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1
300K - 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
200
2.0
—
—
4.0
200
1.25
—
—
4.5
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
Gate Threshold Voltage
Ã
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
100
-100
25
V
= 20V
GSS
GS
nA
—
—
V
= -20 V
GSS
GS
I
—
—
µA
V
V
= 160V, V
=0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Ã
—
0.41
—
0.54
Ω
= 12V, I = 6.0A
D
GS
R
DS(on)
Ã
—
—
0.40
1.4
—
—
0.53
1.4
Ω
V
= 12V, I = 6.0A
D
GS
GS
V
SD
Ã
V
V
= 0V, I = 9.4A
S
1. Part number IRHNJ7230
2. Part numbers IRHNJ3230, IRHNJ4230, IRHNJ8230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
(MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
43
39
190
100
180
100
170
100
125
50
—
36.8
305
—
200
150
100
50
Cu
Br
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ7230
Pre-Irradiation
100
100
10
1
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
10
20µs PULSE WIDTH
J
20µs PULSE WIDTH
°
°
T = 25 C
T = 150 C
J
1
1
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
9.4A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
V
=12V
GS
20µs PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10 11 12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHNJ7230
2000
20
16
12
8
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 9.4A
C
= C + C
iss
gs
gd ,
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
1500
1000
500
0
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.6
1.0
1.4
1.8
2.2
V
, Drain-to-Source Voltage (V)
-V ,Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHNJ7230
Pre-Irradiation
RD
10
8
VDS
VGS
D.U.T.
RG
+VDD
-
6
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
V
2
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHNJ7230
400
300
200
100
0
I
D
TOP
4.2A
5.9A
BOTTOM 9.4A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
.
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ7230
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
GS
= 0 during
12 volt V
applied and V
DS
Á
V
= 25V, starting T = 25°C, L= 3.4mH,
J
GS
irradiation per MIL-STD-750, method 1019, condition A
DD
Peak I = 9.4A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 9.4A, di/dt ≤ 660A/µs,
DS
applied and V = 0 during
GS
SD
DD
160 volt V
V
≤ 200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A
J
Case Outline and Dimensions — SMD-0.5
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
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