IRHNJ54034 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ54034 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-93752C
IRHNJ57034
RADIATION HARDENED
POWER MOSFET
JANSR2N7480U3
60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/703
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNJ57034 100K Rads (Si)
IRHNJ53034 300K Rads (Si)
IRHNJ54034 600K Rads (Si)
0.030Ω 22A* JANSR2N7480U3
0.030Ω 22A* JANSF2N7480U3
0.030Ω 22A* JANSG2N7480U3
IRHNJ58034 1000K Rads (Si) 0.038Ω
22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
22*
D
GS
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
21
88
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
100
22
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
10
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/16/04
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.057
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.03
Ω
V
= 12V, I = 21A
GS D
Ã
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
16
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
V
> =15V, I
= 21A Ã
DS
DS
I
V
=48V ,V =0V
DSS
DS GS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
45
10
15
25
100
35
30
—
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 22A
g
gs
gd
d(on)
r
GS
D
= 30V
V
DS
t
t
t
t
V
DD
= 30V, I = 22A,
=12V, R = 7.5Ω
GS G
D
V
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1152
535
42
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
125
322
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 22A, V
= 0V Ã
j
S
GS
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.9
1.67
—
thJC
thJ-PCB
°C/W
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ57034, JANSR2N7480U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
2.0
—
—
—
—
—
4.0
100
-100
10
60
—
4.0
100
-100
25
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
1.5
—
—
—
—
= V , I = 1.0mA
GS(th)
GS
DS
D
I
V
V
= 20V
= -20 V
GSS
GS
nA
I
GSS
GS
I
µA
Ω
V =48V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-.5)
Diode Forward Voltage
Ã
0.034
0.043
V
= 12V, I = 21A
D
GS
GS
GS
R
DS(on)
Ã
—
—
0.03
1.2
—
—
0.038
1.2
Ω
V
= 12V, I = 21A
D
V
SD
Ã
V
V
= 0V, I = 22A
S
1. Part numbers IRHNJ57034 ( JANSR2N7480U3 ), IRHNJ53034 ( JANSF2N7480U3 ) and IRHNJ54034 ( JANSG2N7480U3 )
2. Part number IRHNJ58034 ( JANSH2N7480U3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
37.3
Energy
(MeV)
285
300
2068
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
Xe
Au
36.8
29
106
60
46
35
60
46
35
60
35
27
60
25
20
40
15
14
63
86.6
70
60
50
40
30
20
10
0
Br
Xe
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
100
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
22A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
= 25V
V
DS
20µs PULSE WIDTH
V
=12V
GS
1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
2500
20
15
10
5
V
= 0V,
f = 1MHz
gd , ds
I
D
= 22A
GS
C
= C + C
gs
C
SHORTED
iss
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
gd
= C + C
ds
rss
C
2000
1500
1000
500
0
oss
gd
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
°
T = 150 C
J
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
°
T = 25 C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
1.2
0.1
0.4
0.6
0.8
1.0
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
RD
35
VDS
LIMITED BY PACKAGE
30
VGS
D.U.T.
RG
25
20
15
10
5
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
200
160
120
80
I
D
TOP
9.8A
14A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
2
GS
t
0.01
Ω
p
40
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ57034, JANSR2N7480U3
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.4mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 22A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 22A, di/dt ≤ 234A/µs,
DS
= 0 during
SD
DD
48 volt V
applied and V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
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Data and specifications subject to change without notice. 06/2004
8
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