IRHNJ54130 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装( SMD- 0.5 )型号: | IRHNJ54130 |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
文件: | 总8页 (文件大小:130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 93754E
IRHNJ57130
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
JANSR2N7481U3
100V, N-CHANNEL
REF: MIL-PRF-19500/703
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNJ57130
IRHNJ53130
IRHNJ54130
100K Rads (Si) 0.06Ω
300K Rads (Si) 0.06Ω
600K Rads (Si) 0.06Ω
22A* JANSR2N7481U3
22A* JANSF2N7481U3
22A* JANSG2N7481U3
22A* JANSH2N7481U3
IRHNJ58130 1000K Rads (Si) 0.075Ω
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
22*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
16
88
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
70
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
1.4
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
* Current is limited by package
For footnotes refer to the last page
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1
10/24/03
IRHNJ57130, JANSR2N7481U3
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.06
Ω
V
= 12V, I = 16A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
13
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 16A ➀
DS
V
DS
I
= 80V ,V =0V
DS GS
DSS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
7.4
20
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
=12V, I = 22A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
25
V
= 50V, I = 22A,
DD
GS
D
100
35
V
=12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
30
—
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1005
365
50
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
22*
88
S
A
SM
V
1.2
250
850
V
T = 25°C, I = 22A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T = 25°C, I = 22A, di/dt ≤100A/µs
j
rr
RR
F
V
DD
≤ 25V ➀
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.9
1.67
—
thJC
thJ-PCB
°C/W
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ57130, JANSR2N7481U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
100
2.0
—
—
4.0
100
1.5
—
—
4.0
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
-100
25
V
GS
V
GS
= 20V
GSS
nA
—
—
= -20 V
GSS
I
—
—
µA
V
= 80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-.5)
Diode Forward Voltage
➀
—
0.064
—
0.08
Ω
V
= 12V, I =16A
D
GS
GS
DS(on)
R
DS(on)
➀
—
0.06
—
0.075
Ω
V
= 12V, I =16A
D
V
SD
➀
—
1.2
—
1.2
V
V
= 0V, I = 22A
GS S
1. Part numbers IRHNJ57130 ( JANSR2N7481U3 ), IRHNJ53130 ( JANSF2N7481U3 ) and IRHNJ54130 ( JANSG2N7481U3 )
2. Part number IRHNJ58130 ( JANSH2N7481U3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
100
100
100
100
100
100
100
100
80
100
35
25
100
25
—
59.4
82.3
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57130, JANSR2N7481U3
Pre-Irradiation
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
10
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
22A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
10
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ57130, JANSR2N7481U3
2000
1600
1200
800
20
15
10
5
V
= 0V,
f = 1MHz
C
GS
I
D
= 22A
V
V
V
= 80V
= 50V
= 20V
C
= C + C
SHORTED
ds
DS
DS
DS
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
oss
ds
C
iss
C
oss
400
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
10
Q
20
30 40
50
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µs
1ms
°
T = 25 C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
DS
, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ57130, JANSR2N7481U3
Pre-Irradiation
RD
30
VDS
LIMITED BY PACKAGE
VGS
25
20
15
10
5
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57130, JANSR2N7481U3
120
90
60
30
0
I
D
TOP
9.8A
14A
22A
1 5V
BOTTOM
DRIVER
L
V
G
DS
.
D.U.T
R
+
V
D D
-
I
AS
V
GS
2
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ57130, JANSR2N7481U3
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 50V, starting T = 25°C, L= 0.3 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 22A, V
= 12V
L
GS
➀ Total Dose Irradiation with V
Bias.
➀ I
≤ 22A, di/dt ≤ 155A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
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Data and specifications subject to change without notice. 10/03
8
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