IRHNJ57230SESCS [INFINEON]
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN;
| 型号： | IRHNJ57230SESCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93836A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57230SE
200V, N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ57230SE 100K Rads (Si) 0.22Ω 12A
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
12
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
7.8
48
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
60
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
12
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
5.4
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0(Typical)
For footnotes refer to the last page
www.irf.com
1
4/19/01
IRHNJ57230SE
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.26
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.22
Ω
V = 12V, I = 7.8A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
6.0
—
—
—
—
—
4.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 7.8A ➀
DS
I
10
25
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
28
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 12A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
9.0
12
V
= 100V
DS
t
t
t
t
25
V
DD
GS
= 100V, I = 12A,
D
100
35
V
=12V,R = 7.5Ω
G
ns
d(off)
f
30
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1000
184
11
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
12
48
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.2
300
3.2
V
T = 25°C, I = 12A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
1.67
—
thJC
°C/W
Junction-to-PC board
6.9
soldered to a 2” square copper-clad board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ57230SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.5
V
GS
= 0V, I = 1.0mA
DSS
D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
= 20V
GSS
GS
nA
µA
I
—
V
GS
= -20V
GSS
I
—
V
DS
=160V,V =0V
GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
DS(on)
—
0.222
Ω
V
= 12V, I = 7.8A
D
GS
R
DS(on)
—
—
0.22
1.2
Ω
V
= 12V, I = 7.8A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 12A
GS
D
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
200
200
200
200
200
200
200
200
150
200
185
50
200
120
25
59.8
82.3
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57230SE
Pre-Irradiation
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
0.1
0.01
5.0V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
100
10
1
12A
=
I
D
2.0
°
T = 150 C
J
1.5
1.0
0.5
0.0
°
T = 25 C
J
V
=50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
6.0
7.0
8.0 9.0
10.0
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHNJ57230SE
2000
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
= 12A
C
= C + C
V
V
V
= 160V
= 100V
= 40V
iss
gs
gd ,
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
1600
1200
800
400
0
oss
ds
C
iss
C
C
oss
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
20
30 40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
100
10
1
DS(ON)
°
T = 150 C
J
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
10ms
Single Pulse
V
= 0 V
GS
0.1
0.1
0.3
0.6
0.9
1.2
1.5
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
Drain-to-Source Voltage (V)
DS,
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHNJ57230SE
Pre-Irradiation
RD
12
9
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57230SE
100
80
60
40
20
0
I
D
TOP
5.4A
9.6A
BOTTOM 12A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ57230SE
Footnotes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 50V, starting T = 25°C, L= 0.82 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 12A, V
= 12V
GS
L
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤ 12A, di/dt ≤ 366A/µs,
DS
applied and V = 0 during
SD
DD
160 volt V
DS
V
≤ 200V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
8
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