IRHNJ57Z30PBF [INFINEON]

Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;


型号：	IRHNJ57Z30PBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
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ꢁ

PD - 93751D

IRHNJ57Z30

JANSR2N7479U3

30V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

^{REF: MIL}5^{-PRF-19500/703}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ57Z30 100K Rads (Si) 0.020Ω 22A* JANSR2N7479U3

IRHNJ53Z30 300K Rads (Si) 0.020Ω 22A* JANSF2N7479U3

IRHNJ54Z30 500K Rads (Si) 0.020Ω 22A* JANSG2N7479U3

IRHNJ58Z30 1000K Rads (Si) 0.025Ω 22A* JANSH2N7479U3

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

Features:

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

22*

= 12V, T = 100°C Continuous Drain Current

22*

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

155

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

1.7

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/25/06

IRHNJ57Z30, JANSR2N7479U3

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.028

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.02

Ω

= 12V, I = 22A

DS(on)

GS D

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

≥ 15V, I

= 22A Ã

= 24V ,V =0V

DS GS

DSS

µA

—

= 24V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

4.0

100

-100

= 20V

GSS

= -20V

GSS

=12V, I = 22A

d(on)

GS D

= 15V

= 15V, I = 22A,

100

=12V, R = 7.5Ω

Turn-Off Delay Time

Fall Time

Total Inductance

d(off)

—

+ L

Measured from the center of

drain pad to center of source pad

Input Capacitance

—

2054

936

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

—

22*

1.2

102

193

T = 25°C, I = 22A, V

= 0V Ã

Reverse Recovery Time

T = 25°C, I = 22A, di/dt ≤ 100A/µs

Reverse Recovery Charge

≤ 25V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC board

—

6.9

1.67

—

thJC

thJ-PCB

°C/W

soldered to a 2 square copper-clad board

Note: Corresponding Spice and Saber models are available on International Rectifier web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHNJ57Z30, JANSR2N7479U3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 500K Rads(Si)¹1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

2.0

—

4.0

1.5

—

4.0

= 0V, I = 1.0mA

DSS

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

100

-100

= 20V

GSS

—

= -20 V

GSS

—

µA

= 24V, V =0V

DSS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-0.5)

Diode Forward Voltage

—

0.024

0.03

Ω

= 12V, I =22A

DS(on)

—

0.02

—

0.025

Ω

= 12V, I =22A

—

1.2

—

1.2

= 0V, I = 22A

GS S

1. Part numbers IRHNJ57Z30 (JANSR2N7479U3), IRHNJ53Z30 (JANSF2N7479U3) and IRHNJ54Z30 (JANSG2N7479U3)

2. Part number IRHNJ58Z30 (JANSH2N7479U3)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe OperatingArea

VDS (V)

Ion

LET

Energy

(MeV)

261

285

344

Range

(MeV/(mg/cm²))

(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

22.5

7.5

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNJ57Z30, JANSR2N7479U3

Pre-Irradiation

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

BOTTOM 5.0V

BOTTOM5.0V

5.0V

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

1.5

1.0

0.5

0.0

22A

T = 25 C

T = 150 C

= 15V

25V

=12V

20µs PULSE WIDTH

5.0

-60 -40 -20

20 40 60 80 100 120 140 160

6.0

7.0

8.0 9.0

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHNJ57Z30, JANSR2N7479U3

4000

= 0V,

f = 1MHz

C SHORTED

I = 22A

= C + C

iss

gd ,

= 24V

= 15V

= 6V

= C

rss

= C + C

3200

2400

1600

800

oss

iss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

40 50

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

T = 150 C

T = 25 C

100µs

1ms

Tc = 25°C

Tj = 150°C

0ms

Single Pulse

= 0 V

0.4

0.8

1.2

1.6

, Drain-to-Source Voltage (V)

100

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRHNJ57Z30, JANSR2N7479U3

Pre-Irradiation

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNJ57Z30, JANSR2N7479U3

320

240

160

TOP

9.8A

14A

BOTTOM 22A

15V

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHNJ57Z30, JANSR2N7479U3

Footnotes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

= 15V, starting T = 25°C, L= 0.64mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 22A, V

= 12V

Å Total Dose Irradiation with V

Bias.

Â I

≤ 22A, di/dt ≤ 54A/µs,

= 0 during

24 volt V

applied and V

≤ 30V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-0.5

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/2006

www.irf.com

IRHNJ57Z30PBF [INFINEON]

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