IRHNJ593034 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT; 抗辐射功率MOSFET表面贴装
| 型号： | IRHNJ593034 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| 文件： | 总8页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94608
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ597034
60V, P-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ597034 100K Rads (Si) 0.06Ω
IRHNJ593034 300K Rads (Si) 0.06Ω
ID
-22A
-22A
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-22*
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-16
-88
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
107
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-1.4
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
* Current is limited by package
For footnotes refer to the last page
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1
02/13/03
IRHNJ597034
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.063
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.06
Ω
V
= -12V, I = -16A
GS D
DS(on)
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
10
—
—
—
—
—
-4.0
—
-10
-25
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
= -25V, I
= -16A ➀
DS
V
DS
I
= -48V ,V =0V
GS
DSS
DS
µA
—
V
= -48V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
38
V
= -20V
GSS
GS
nA
nC
V
= 20V
GSS
GS
Q
Q
Q
V
=-12V, I = -22A
g
gs
gd
d(on)
r
GS D
15
V
= -30V
DS
13
t
t
t
t
25
V
DD
V
= -30V, I = -22A,
D
50
=-12V, R = 7.5Ω,
GS G
ns
Turn-Off Delay Time
FallTime
Total Inductance
75
d(off)
50
—
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1540
590
60
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-22*
-88
S
A
SM
V
-5.0
100
200
V
T = 25°C, I = -22A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T = 25°C, I =-22A, di/dt ≤ -100A/µs
j
rr
RR
F
V
≤ -25V ➀
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.9
1.67
—
thJC
thJ-PCB
°C/W
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ597034
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-60
-2.0
—
—
-60
-2.0
—
—
-5.0
-100
100
-10
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
-4.0
-100
100
-10
= V , I = -1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
=-20V
GSS
GS
GS
nA
—
—
V
= 20 V
GSS
I
—
—
µA
V
=-48V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
➀
—
0.06
—
0.06
Ω
V
= -12V, I =-16A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.06
-5.0
—
—
0.06
-5.0
Ω
V
= -12V, I =-16A
D
GS
GS
V
SD
➀
V
V
= 0V, I = -22A
S
1. Part number IRHNJ597034
2. Part number IRHNJ593034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Br
I
33.1
30.5
28.4
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 45
—
- 60
- 25
—
59.7
Au
82.3
350
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ597034
Pre-Irradiation
100
100
10
1
VGS
VGS
-15V
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
5.0V
-
10
20 s PULSE WIDTH
µ
Tj = 25°C
20 s PULSE WIDTH
µ
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
-22A
=
I
D
T
= 25°C
J
T
= 150°C
J
V
DS
= -25V
20 s PULSE WIDTH
µ
V
= -12V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10
T , Junction Temperature ( C)
J
-V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ597034
16
12
8
2500
V
= 0V, f = 1 MHZ
GS
V
V
= -48V
I
D
= -22A
DS
C
iss
= C + C , C SHORTED
gs gd ds
= -30V
DS
C
rss
= C
gd
2000
VDS= -12V
C
oss
= C + C
ds
gd
Ciss
1500
Coss
1000
4
500
Crss
0
0
1
10
100
0
5
10
15
20
25
30
-V , Drain-to-Source Voltage (V)
DS
Q
G
Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 25°C
J
T
= 150°C
J
10
00µ
1
s
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
10ms
GS
5.5
, Source-to-Drain Voltage (V)
1.0
1
0.5
1.5
-V
2.5
3.5
4.5
6.5
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ597034
Pre-Irradiation
RD
30
25
20
15
10
5
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ597034
L
200
160
120
80
V
D S
I
D
TOP
-10A
-14A
-
D .U .T
R
G
VDD
BOTTOM -22A
+
I
A
A S
D R IV E R
V
-20V
GS
0.01
Ω
t
p
15V
40
Fig 12a. Unclamped Inductive Test Circuit
I
AS
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ597034
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= - 25V, starting T = 25°C, L=0.44mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = - 22A, V
= -12V
L
GS
➀ Total Dose Irradiation with V
Bias.
➀ I
SD
≤ - 22A, di/dt ≤ - 290A/µs,
DS
applied and V = 0 during
GS
-48 volt V
V
≤ - 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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