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IRHNJ593130PBF [INFINEON]

Power Field-Effect Transistor, 12.5A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN;
IRHNJ593130PBF
型号： IRHNJ593130PBF
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 12.5A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

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PD - 94047A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
IRHNJ597130  
100V, P-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ597130 100K Rads (Si) 0.205Ω -12.5A  
IRHNJ593130 300K Rads (Si) 0.205Ω -12.5A  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-12.5  
D
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-8.0  
-50  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
96  
mJ  
A
AS  
I
-12.5  
7.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
-6.2  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 ( for 5s )  
1.0 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
10/01/01  
IRHNJ597130  
Pre-Irradiation  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
-100  
—
—
—
—
V
V
= 0V, I = -1.0mA  
D
GS  
V/°C Reference to 25°C, I = -1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
-0.12  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
0.205  
Ω
V = -12V, I = -8.0A  
GS D  
DS(on)  
➀
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
-2.0  
6.8  
—
—
—
—
—
-4.0  
—
V
V
= V , I = -1.0mA  
GS(th)  
fs  
DS  
GS  
D
Ω
g
S ( )  
V
DS  
V
> -15V, I  
= -8.0A ➀  
DS  
I
-10  
-25  
= -80V ,V =0V  
DS GS  
DSS  
µA  
—
V
= -80V,  
DS  
= 0V, T = 125°C  
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0  
-100  
100  
45  
V
V
= -20V  
= 20V  
GSS  
GSS  
GS  
GS  
nA  
nC  
Q
Q
Q
V
=-12V, I = -12.5A  
GS D  
g
gs  
gd  
d(on)  
r
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
FallTime  
16  
11  
V
= -50V  
DS  
t
t
t
t
28  
V
DD  
V
= -50V, I = -12.5A,  
D
78  
35  
=-12V, R = 7.5Ω  
GS G  
ns  
d(off)  
f
125  
—
L
+ L  
Total Inductance  
S
D
nH  
Measured from the center of  
drain pad to center of source pad  
C
C
C
Input Capacitance  
Output Capacitance  
—
—
—
1372  
326  
20  
—
—
—
V
= 0V, V  
= -25V  
iss  
oss  
rss  
GS  
DS  
f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
—
—
—
—
—
—
—
—
—
—
-12.5  
-50  
S
A
SM  
V
t
-5.0  
191  
778  
V
ns  
nC  
T = 25°C, I = -12.5A, V  
= 0V ➀  
j
SD  
rr  
S
GS  
Reverse Recovery Time  
T = 25°C, I =-12.5A, di/dt ≤ -100A/µs  
j
F
V
Q
Reverse Recovery Charge  
≤ -50V ➀  
DD  
RR  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
Junction-to-Case  
—
—
—
1.67  
—
thJC  
°C/W  
Junction-to-PC board  
6.9  
soldered to a 2” square copper-clad board  
thJ-PCB  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
Radiation Characteristics  
IRHNJ597130  
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
The hardness assurance program at International Rectifier is comprised of two radiation environments.  
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
conditions in order to provide a direct comparison.  
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀  
Parameter  
100K Rads(Si)1  
300KRads(Si)2  
Units  
Test Conditions  
Min  
Max  
Min  
Max  
BV  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
-100  
-2.0  
—
—
-4.0  
-100  
100  
-100  
-2.0  
—
—
-5.0  
-100  
100  
V
= 0V, I = -1.0mA  
GS D  
DSS  
V
V
V
= V , I = -1.0mA  
GS(th)  
GS  
DS  
D
I
V
=-20V  
GS  
GSS  
nA  
I
—
—
V
= 20 V  
GS  
GSS  
I
—
—
-10  
0.205  
—
—
-10  
0.205  
µA  
Ω
V
V
=-80V, V =0V  
GS  
= -12V, I =-8.0A  
D
DSS  
DS  
GS  
R
DS(on)  
Static Drain-to-Source  
On-State Resistance (TO-3)  
Static Drain-to-Source  
On-State Resistance (SMD-0.5)  
Diode Forward Voltage  
➀
R
DS(on)  
➀
—
—
0.205  
-5.0  
—
—
0.205  
-5.0  
Ω
V
= -12V, I =-8.0A  
GS  
D
V
SD  
➀
V
V
= 0V, I = -12.5A  
GS S  
1. Part number IRHNJ597130  
2. Part number IRHNJ593130  
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Single Event Effect Safe Operating Area  
VDS (V)  
Ion  
LET  
(MeV/(mg/cm2))  
37.9  
Energy  
(MeV)  
252.6  
314  
Range  
@VGS=20V  
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V  
Br  
I
Au  
33.1  
30.5  
28.4  
-100  
-100  
-100  
-100  
-100  
-100  
-100  
-100  
-100  
-100  
-100  
-30  
-100  
-75  
—
-100  
-25  
59.7  
82.3  
350  
—
-120  
-100  
-80  
-60  
-40  
-20  
0
Br  
I
Au  
0
5
10  
15  
20  
25  
VGS  
Fig a. Single Event Effect, Safe Operating Area  
For footnotes refer to the last page  
www.irf.com  
3
IRHNJ597130  
Pre-Irradiation  
100  
10  
1
100  
VGS  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
VGS  
TOP  
TOP  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
BOTTOM -5.0V  
BOTTOM -5.0V  
10  
-5.0V  
-5.0V  
20µs PULSE WIDTH  
T = 25 C  
J
20µs PULSE WIDTH  
T = 150 C  
J
°
°
1
0.1  
1
10  
100  
0.1  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V  
DS  
, Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
10  
1
2.5  
-12.5A  
=
I
D
°
T = 25 C  
J
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 150 C  
J
V
= -25V  
DS  
20µs PULSE WIDTH  
V
= -12V  
GS  
5
6
7
8
9
10  
11  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
-V , Gate-to-Source Voltage (V)  
GS  
T , Junction Temperature( C)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs.Temperature  
4
www.irf.com  
Pre-Irradiation  
IRHNJ597130  
2000  
1600  
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
GS  
I
D
= -12.5A  
C
= C + C  
iss  
gs  
gd  
gd ,  
V
V
V
=-80V  
=-50V  
=-20V  
C
= C  
DS  
DS  
DS  
rss  
C
= C + C  
gd  
oss  
ds  
C
iss  
1200  
800  
400  
0
C
oss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
C
rss  
0
1
10  
100  
0
10  
20  
30  
40  
-V , Drain-to-Source Voltage (V)  
DS  
Q
, Total Gate Charge (nC)  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
100  
10  
1
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
°
T = 150 C  
J
°
T = 25 C  
J
1ms  
1
10ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
V
= 0 V  
GS  
0.1  
0.1  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
1
10  
100  
1000  
-V ,Source-to-Drain Voltage (V)  
SD  
-V  
, Drain-toSource Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
ForwardVoltage  
www.irf.com  
5
IRHNJ597130  
Pre-Irradiation  
RD  
14  
12  
10  
8
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
6
Fig 10a. Switching Time Test Circuit  
4
V
DS  
2
90%  
0
25  
50  
75  
100  
125  
150  
°
, Case Temperature ( C)  
T
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
CaseTemperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.1  
t
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
1
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
6
www.irf.com  
Pre-Irradiation  
IRHNJ597130  
L
V
200  
160  
120  
80  
DS  
I
D
TOP  
-5.6A  
-
D.U.T  
R
-8.0A  
BOTTOM-12.5A  
G
VDD  
A
+
I
AS  
DRIVER  
V
-
GS  
0.01  
t
Ω
p
15V  
40  
Fig 12a. Unclamped Inductive Test Circuit  
I
0
AS  
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature( C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. DrainCurrent  
t
p
V
(BR)DSS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
Q
Q
G
-12V  
1
.3µF  
-12 V  
-
Q
V
GS  
GD  
+
DS  
D.U.T.  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
www.irf.com  
7
IRHNJ597130  
Footnotes:  
Pre-Irradiation  
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
➀➀➀Total Dose Irradiation with V Bias.  
➀➀ Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
= 0 during  
-12 volt V  
applied and V  
➀➀➀V  
= -25V, starting T = 25°C, L=1.2 mH  
J
GS  
irradiation per MIL-STD-750, method 1019, condition A.  
DS  
DD  
Peak I = -12.5A, V  
= -12V  
L
GS  
➀➀Total Dose Irradiation with V Bias.  
➀➀ I  
≤ -12.5A, di/dt ≤ -320A/µs,  
DS  
applied and V = 0 during  
GS  
SD  
DD  
-80 volt V  
V
≤ -100V, T ≤ 150°C  
DS  
irradiation per MlL-STD-750, method 1019, condition A.  
J
Case Outline and Dimensions — SMD-0.5  
PAD ASSIGNMENTS  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 10/01  
8
www.irf.com  
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New Products  
QIRL  
In addition to its wide range of qualified JANS products International Rectifier announces "QIRL."  
Products that are Rad tested, where applicable, fully compliant with all screening and QCI Space level  
requirements.Lead times are from 2-16 weeks. QIRL specifications are managed and controlled by IR's  
Documentation Management Group.  
grada  
-
1811  
Same Electrical, mechanical, test requirements as JANS QPL. Wafers from a JANS fab, produced and  
Bytes  
tested on a JANS line.  
QIRL Part Number  
Nomenclature  
* Also available  
for standard  
MOSFETS,  
Schottkys, and  
Control ICs  
PRODUCT DIE PACKAGE  
PART  
NUMBER  
REVISION SCREENING  
TYPE  
SIZE TYPE  
NUMBER  
LEVELS  
TXV  
B
FRED  
N/A TO-254AA HFA35HB60CSCV  
0
0
DRIVER N/A MO038AB  
IR2130DSCB  
18-PIN  
DRIVER N/A  
LCC  
IR2110E4SCS  
3
0
S
Related  
Information:  
International  
Rectifier New  
QIRL Program  
Provides  
18-PIN  
DRIVER N/A  
LCC  
IR2113E6SCB  
B
DRIVER N/A MO036AB  
DRIVER N/A MO036AB  
IR2110L4SCS  
IR213L6SCB  
2
0
S
B
Standardized  
Rad-Hard  
Components for  
Space  
Applications  
...more  
18-PIN  
DRIVER N/A  
LCC  
IR2110E4SCB  
1
B
DRIVER N/A M0-036AB  
DRIVER N/A MO-036AA  
DRIVER N/A MO-036AB  
DRIVER N/A MO036AA  
POWER  
IR2110L4SCB  
IR2125ZSCB  
RIC7113L4SCB  
IR2125ZSCS  
2
3
1
0
B
B
B
S
Contact your  
local sales  
representative  
for more  
1
3
3
3
3
3
3
SMD-1  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
IRF5N5210SCX  
IRFNJ9130CSCV  
IRFNJ9130CSCX  
IRFNJ9230CSCV  
IRFNJ9230CSCX  
IRFE130SCX  
0
0
TX  
TXV  
TX  
MOSFET  
POWER  
MOSFET  
information.  
POWER  
MOSFET  
IR  
IR  
IR  
2
POWER  
MOSFET  
TXV  
TX  
POWER  
MOSFET  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
POWER  
MOSFET  
18-PIN  
LCC  
IRFE130SCV  
3
TXV  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (1 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
POWER  
MOSFET  
18-PIN  
LCC  
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
2
2
2
2
2
3
IRFE130SCS  
IRFE230SCX  
IRFE230SCV  
IRFE230SCS  
IRFE9130SCX  
IRFE9130SCV  
IRFE130SCS  
IRFE9230SCX  
IRFE9230SCV  
IRFE9230SCS  
IRFE330SCX  
IRFE330SCV  
IRFE330SCS  
IRFE430SCX  
IRFE430SCV  
IRFE430SCS  
IRFE9120SCX  
IRFE9120SCV  
IRFE9120SCS  
IRFE9220SCX  
IRFE9220SCV  
IRFE9220SCS  
IRFY220CSCX  
IRFY220CMSCX  
0
2
2
0
2
3
1
2
2
1
2
2
0
2
2
0
2
2
1
2
2
1
0
1
0
S
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
TX  
TXV  
S
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
18-PIN  
LCC  
POWER  
MOSFET  
TO-257AA  
TO-257AA  
TX  
TX  
TX  
POWER  
MOSFET  
POWER  
MOSFET  
TO-257AA IRFY9230CMSCX  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (2 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
POWER  
MOSFET  
3
3
3
3
4
4
4
4
4
4
4
4
4
3
3
4
4
4
4
4
4
4
4
4
4
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
IRFY9130CSCS  
IRFY230CMSCX  
IRFY230CSCX  
IRFY9230CSCX  
IRFY440CMSCX  
IRFY9140CSCS  
IRFY240CSCX  
IRFY340SCX  
0
0
0
0
0
3
5
4
0
1
0
1
2
2
1
2
3
5
2
0
2
3
2
3
3
S
POWER  
MOSFET  
TX  
TX  
TX  
TX  
S
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
TX  
TX  
TX  
S
POWER  
MOSFET  
POWER  
MOSFET  
TO-257AA IRFY9240CMSCX  
POWER  
MOSFET  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
TO-257AA  
IRFY140CMSCS  
IRFY140CSCS  
IRFY044CSCS  
IRFY440CSCX  
IRFY9130CSCX  
IRFY9130CSCV  
IRFY9140CSCX  
IRFY9140CSCV  
IRFY140CSCX  
IRFY044CSCV  
IRFY044CSCX  
IRFY140CSCV  
IRFY240CSCV  
IRFY340CSCV  
IRFY440CSCV  
IRFY240CSCV  
POWER  
MOSFET  
S
POWER  
MOSFET  
S
POWER  
MOSFET  
TX  
TX  
TXV  
TX  
TXV  
TX  
TXV  
TX  
TXV  
TXV  
TXV  
TXV  
TXV  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
POWER  
MOSFET  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (3 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
POWER  
MOSFET  
4
4
4
4
4
3
6
4
4
3
1
1
1
1
1
3
3
3
3
3
3
3
3
3
1
TO-257AA  
TO-257AA  
IRFY440CMSCS  
IRFY140CMSCX  
IR  
1
S
TX  
TX  
TXV  
TXV  
TX  
S
POWER  
MOSFET  
POWER  
MOSFET  
TO-257AA IRFY9140CMSCX  
1
POWER  
MOSFET  
TO-257AA  
TO-257AA  
TO-257AA  
TO-254AA  
TO-257AA  
TO-257AA  
TO-257AA  
MO036AB  
MO036AB  
MO036AB  
IRFY9240SCV  
IRFY240SCV  
0
POWER  
MOSFET  
0
POWER  
MOSFET  
IRFY130CMSCX  
IRFM064CSCS  
IRFY240CSCS  
IRFY240CMSCX  
IRFY430CSCX  
IRHG9110SCS  
IRHG7110SCS  
IRHG6110SCS  
0
POWER  
MOSFET  
0
POWER  
MOSFET  
0
S
POWER  
MOSFET  
0
TX  
TX  
S
POWER  
MOSFET  
0
RADHARD  
MOSFET  
3
RADHARD  
MOSFET  
5
S
RADHARD  
MOSFET  
8
S
RADHARD  
MOSFET  
MO-036AB IRHG567110SCS  
2
S
RADHARD  
MOSFET  
MO-036AB  
IRHG57110SCS  
IRHE9130SCS  
IRHE57130SCS  
IRHE57230SCS  
IRHE597034SCS  
IRHE597130SCS  
IRHE597230SCS  
IRHE57Z30SCS  
IRHE57034SCS  
IRHE9230SCS  
IRHE9110SCS  
0
S
RADHARD  
MOSFET  
18-PIN  
LCC  
3
S
RADHARD  
MOSFET  
18-PIN  
LCC  
1
S
RADHARD  
MOSFET  
18-PIN  
LCC  
IR  
IR  
IR  
IR  
0
S
RADHARD  
MOSFET  
18-PIN  
LCC  
S
RADHARD  
MOSFET  
18-PIN  
LCC  
S
RADHARD  
MOSFET  
18-PIN  
LCC  
S
RADHARD  
MOSFET  
18-PIN  
LCC  
S
RADHARD  
MOSFET  
18-PIN  
LCC  
0
S
RADHARD  
MOSFET  
18-PIN  
LCC  
2
S
RADHARD  
MOSFET  
18-PIN  
LCC  
2
S
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (4 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
RADHARD  
MOSFET  
28-PIN  
LCC  
1
1
1
1
1
3
3
3
3
3
3
3
3
3
3
5
3
3
3
3
3
3
3
3
3
IRHQ57113SESCS  
IRHQ57214SESCS  
IRHQ567110SCS  
IRHF7110SCS  
2
2
S
S
RADHARD  
MOSFET  
28-PIN  
LCC  
RADHARD  
MOSFET  
28-PIN  
LCC  
3
S
RADHARD  
MOSFET  
TO-39  
TO-39  
1
S
RADHARD  
MOSFET  
IRHF7110SCV  
2
TXV  
S
RADHARD  
MOSFET  
TO-39  
IRHF57034SCS  
IRHF57130SCS  
IRHF57230SCS  
IRHF57Z30SCS  
IRHF57230SESCS  
IRHF7330SESCS  
IRHF57Z30SCS  
IRHF597034SCS  
IRHF597230SCS  
IRHF597Z30SCS  
IRHNJ57Z30SCS  
IRHNJ57230SCS  
IRHNJ57130SCS  
IRHNJ57034SCS  
3
RADHARD  
MOSFET  
TO-39  
6
S
RADHARD  
MOSFET  
TO-39  
0
S
RADHARD  
MOSFET  
TO-39  
3
S
RADHARD  
MOSFET  
TO-39  
1
S
RADHARD  
MOSFET  
TO-39  
2
S
RADHARD  
MOSFET  
TO-39  
3
S
RADHARD  
MOSFET  
TO-39  
IR  
IR  
IR  
7
S
RADHARD  
MOSFET  
TO-39  
S
RADHARD  
MOSFET  
TO-39  
S
RADHARD  
MOSFET  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
S
RADHARD  
MOSFET  
1
S
RADHARD  
MOSFET  
5
S
RADHARD  
MOSFET  
4
S
RADHARD  
MOSFET  
SMD-0.5 IRHNJ57230SESCS  
SMD-0.5 IRHNJ57234SESCS  
6
S
RADHARD  
MOSFET  
3
S
RADHARD  
MOSFET  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
IRHNJ597034SCS  
IRHNJ597130SCS  
IRHNJ597230SCS  
IRHNJ597Z30SCS  
IR  
IR  
IR  
IR  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
S
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (5 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
RADHARD  
MOSFET  
3
6
6
6
6
6
6
6
5
6
6
6
6
6
6
6
5
5
5
6
3
3
5
5
6
TO-39  
SMD-2  
IRHF7430SESCS  
IRHNA57160SCS  
IRHNA57Z60SCS  
IRHNA57260SCS  
IRHNA57064SCS  
IRHNA57163SESCS  
IRHNA57260SESCS  
IRHNA7064SCS  
IRHN7C50SECS  
IRHM57260SCS  
IRHM57160SCS  
IRHM57064SCS  
IRHM57Z60SCS  
IRHM7064SCS  
3
6
5
4
5
2
13  
1
3
4
5
8
3
2
9
2
4
2
2
3
2
2
2
3
3
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
RADHARD  
MOSFET  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-2  
RADHARD  
MOSFET  
SMD-1  
RADHARD  
MOSFET  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
TO-254AA IRHM57260SESCS  
TO-254AA IRHM7260SESCS  
TO-254AA IRHM7C50SESCS  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
SMD-1  
SMD-1  
SMD-2  
IRHN9150SCS  
IRHN7450SCS  
IRHNA7260SCS  
IRHE7130SCS  
IRHE7230SCS  
IRHM9150SCS  
IRHM9250SCS  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
18-PIN  
LCC  
RADHARD  
MOSFET  
18-PIN  
LCC  
RADHARD  
MOSFET  
TO-254AA  
TO-254AA  
RADHARD  
MOSFET  
RADHARD  
MOSFET  
TO-254AA IRHM7360SESCS  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (6 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
RADHARD  
MOSFET  
6
6
3
5
3
3
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3
TO-254AA IRHM7460SESCS  
TO-254AA IRHM7264SESCS  
2
3
S
S
RADHARD  
MOSFET  
RADHARD  
MOSFET  
TO-39  
IRHF9230SCS  
IRHN7250SCS  
0
S
RADHARD  
MOSFET  
SMD-1  
2
S
RADHARD  
MOSFET  
TO-257AA IRHY9130CMSCS  
TO-257AA IRHY9230CMSCS  
2
S
RADHARD  
MOSFET  
1
S
RADHARD  
MOSFET  
SMD-2  
IRHNA9064SCS  
IRHM9064SCS  
IRHM9160SCS  
2
S
RADHARD  
MOSFET  
TO-254AA  
TO-254AA  
2
S
RADHARD  
MOSFET  
0
S
RADHARD  
MOSFET  
TO-254AA IRHM7260SESCS  
TO-254AA IRHM597Z60SCS  
2
S
RADHARD  
MOSFET  
0
S
RADHARD  
MOSFET  
SMD-2  
SMD-2  
SMD-2  
IRHNA57Z60SCS  
IRHNA57064SCS  
IRHNA57264SESCS  
8
S
RADHARD  
MOSFET  
7
S
RADHARD  
MOSFET  
1
S
RADHARD  
MOSFET  
TO-254AA IRHM57264SESCS  
TO-254AA IRHM597064SCS  
IR  
IR  
IR  
IR  
IR  
IR  
IR  
0
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
SMD-2  
TO-254AA IRHM597160SCS  
SMD-2 IRHNA597160SCS  
TO-254AA IRHM597260SCS  
IRHNA597064SCS  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
SMD-2  
SMD-2  
SMD-2  
SMD-2  
SMD-0.5  
IRHNA597260SCS  
IRHNA7260SESCS  
IRHNA57064SCV  
IRHNA57160SCV  
IRHNJ7330SESCS  
S
RADHARD  
MOSFET  
S
RADHARD  
MOSFET  
1
TXV  
TXV  
S
RADHARD  
MOSFET  
3
RADHARD  
MOSFET  
2
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (7 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
RADHARD  
MOSFET  
6
3
3
3
3
5
3
3
5
5
3
6
3
3
SMD-2  
IRHNA7360SESCS  
3
4
S
RADHARD  
MOSFET  
TO-257AA IRHY7434CSESCS  
S
RADHARD  
MOSFET  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-1  
IRHNJ9130SCS  
IRHNJ7430SESCS  
IRHNJ9230SCS  
4
S
RADHARD  
MOSFET  
3
S
RADHARD  
MOSFET  
0
S
S
RADHARD  
MOSFET  
IRHN57250SESCS  
2
RADHARD  
MOSFET  
TO-254AA IRHM57230SESCS  
IR  
1
S
RADHARD  
MOSFET  
18-PIN  
IRHE7430SESCS  
LCC  
S
RADHARD  
MOSFET  
TO-3  
TO-3  
IRH7150SCS  
IRH7250SCS  
0
S
RADHARD  
MOSFET  
IR  
1
S
RADHARD  
MOSFET  
TO-257AA IRHY7G30CMSESCV  
TO-254AA IRHM57160SCV  
TO-257AA IRHY57034CMSCS  
TXV  
TXV  
S
RADHARD  
MOSFET  
0
RADHARD  
MOSFET  
0
RADHARD  
MOSFET  
SMD-0.5  
SMD-0.5  
IRHNJ59130SCS  
IR  
S
SCHOTTKY 60  
8CLJQ045SCV  
10YQ045CSCS  
12CLQ150SCS  
12CGQ150SCS  
12CGQ150SCX  
12CGQ150SCV  
15CGQ100SCX  
15CGQ100SCV  
15CGQ100SCS  
15CLQ100SCV  
15JGQ100SCS  
15JGQ100SCX  
15CLQ100SCS  
15CGQ100SCS  
15LJQ100SCV  
22CGQ045SCS  
22JGQ045SCS  
22GQ100SCS  
1
IR  
0
5
0
1
2
5
6
3
3
0
3
6
0
3
1
1
3
2
0
TXV  
S
SCHOTTKY 125 TO-257AA  
SCHOTTKY 125 SMD-1  
S
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
S
TX  
TXV  
TX  
TXV  
S
SCHOTTKY 125  
SMD-1  
TXV  
S
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 TO-254AA  
TX  
S
SCHOTTKY 125  
SMD-1  
SCHOTTKY 125 TO-254AA  
SCHOTTKY 125 SMD-0.5  
SCHOTTKY 150 TO-254AA  
SCHOTTKY 150 TO-254AA  
SCHOTTKY 200 TO-254AA  
SCHOTTKY 150 TO-254AA  
SCHOTTKY 150 TO-254AA  
SCHOTTKY 150 TO-254AA  
S
TXV  
S
S
S
22CGQ045SCX  
22CGQ045SCV  
22JGQ045SCX  
TX  
TXV  
TX  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (8 of 9) [11/2/2001 1:36:48 PM]  
International Rectifier  
SCHOTTKY 150 TO-254AA  
SCHOTTKY 200 TO-254AA  
SCHOTTKY 200 TO-254AA  
SCHOTTKY 200 TO-254AA  
22JGQ045SCV  
22GQ100SCV  
25GQ045SCS  
25GQ045SCV  
30SLJQ045SCV  
30CLJQ100SCS  
35CLQ045SCS  
60LQ045SCS  
60LQ045SCX  
60LQ045SCV  
60LQ100SCX  
60LQ100SCV  
60LQ100SCS  
60CKQ045SCV  
60CKQ045SCX  
0
1
0
0
0
0
1
5
2
0
0
0
2
IR  
0
TXV  
TXV  
S
TXV  
TXV  
S
SCHOTTKY 70  
SCHOTTKY 70  
SCHOTTKY 150  
SCHOTTKY 200  
SCHOTTKY 200  
SCHOTTKY 200  
SCHOTTKY 200  
SCHOTTKY 200  
SCHOTTKY 200  
SCHOTTKY 150  
SCHOTTKY 150  
SMD-0.5  
SMD-0.5  
SMD-1  
SMD-1  
SMD-1  
SMD-1  
SMD-1  
SMD-1  
SMD-1  
TO-258  
TO-258  
S
S
TX  
TXV  
TX  
TXV  
S
TXV  
TX  
Location: China  
Japan  
Privacy Statement  
© Copyright 2001 International Rectifier  
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (9 of 9) [11/2/2001 1:36:48 PM]  

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