IRHNJ597Z30 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ597Z30 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-94661
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ597Z30
30V, P-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ597Z30 100K Rads (Si) 0.07Ω -22A*
IRHNJ593Z30 300K Rads (Si) 0.07Ω -22A*
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I @ V
= -12V, T =25°C Continuous Drain Current
-22*
D
GS
GS
C
A
I @ V
D
= -12V, T =100°C Continuous Drain Current
-18
-88
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
152
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-1.57
-55 to 150
T
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/07/05
IRHNJ597Z30
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-30
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.03
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.07
Ω
V
= -12V, I = -18A
GS D
Ã
DS(on)
-2.0
12
—
—
—
—
—
-4.0
—
-10
-25
V
S ( )
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
V
DS =
-15V, I
= -18A Ã
DS
I
V
= -24V ,V =0V
DSS
DS GS
µA
—
V
= -24V,
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
45
20
13
25
100
50
70
—
V
V
= -20V
= 20V
GSS
GSS
g
gs
GS
GS
nA
nC
V
=-12V, I = -22A
GS D
V
= -15V
DS
gd
t
V
= -15V, I = -22A,
= -12V, R = 7.5Ω,
d(on)
DD
GS
D
t
r
V
G
ns
t
t
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1670
975
126
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
g
Internal Gate Resistance
6.6
f = 1.0MHz, open drain
Ω
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-22*
-88
-5.0
75
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -22A, V
= 0V Ã
j
S
GS
T = 25°C, I =-22A, di/dt ≤ -100A/µs
j
F
125
V
≤ -25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.9
1.67
—
thJC
thJ-PCB
°C/W
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ597Z30
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-30
-2.0
—
—
—
—
-30
-2.0
—
—
—
—
-4.0
-100
100
-10
0.072
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
-4.0
-100
100
-10
= V , I = -1.0mA
GS(th)
DS
D
I
I
V
V
GS
=-20V
= 20 V
GSS
GS
nA
GSS
I
µA
Ω
V
V
=-24V, V
=0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Ã
—
0.072
—
V
= -12V, I = -18A
D
GS
GS
GS
R
DS(on)
Ã
—
—
0.070
-5.0
—
—
0.070
-5.0
Ω
= -12V, I = -18A
D
V
SD
Ã
V
V
= 0V, I = -22A
S
1. Part number IRHNJ597Z30
2. Part number IRHNJ593Z30
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.5
Energy
(MeV)
278.5
320
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Br
I
Au
36
31
27
- 30
- 30
- 30
- 30
- 30
- 30
- 30
- 30
- 30
- 30
- 30
- 25
- 30
- 25
—
59.7
81.4
332
-35
-30
-25
-20
-15
-10
-5
Br
I
Au
0
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ597Z30
Pre-Irradiation
1000
1000
100
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
100
10
1
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
-5.0V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.5
1.0
0.5
100
I
= -22A
D
T
= 150°C
J
T
= 25°C
J
V
= -15V
DS
V
= -12V
GS
60µs PULSE WIDTH
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
5.5
6
6.5
7
7.5
8
8.5
9
T , Junction Temperature (°C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ597Z30
3500
20
16
12
8
V
C
= 0V,
= C
f = 1 MHz
GS
+ C , C
SHORTED
V
V
= -24V
I
= -22A
iss
gs
gd
ds
DS
DS
D
3000
C
= C
= -15V
rss
gd
C
= C + C
oss
ds
gd
2500
2000
1500
1000
500
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
0
10
100
0
10
Q
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Total Gate Charge (nC)
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
T
= 150°C
J
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 25°C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
10ms
V
= 0V
5
GS
Single Pulse
1
0.1
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
6
-V
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHNJ597Z30
Pre-Irradiation
RD
30
24
18
12
6
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNJ597Z30
L
300
250
200
150
100
50
V
DS
I
D
TOP
-9.8A
-14A
-
D.U.T
R
G
V
DD
A
+
I
AS
BOTTOM -22A
DRIVER
V
-
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
I
AS
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHNJ597Z30
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
Á V
= - 25V, starting T = 25°C, L=0.63 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = - 22A, V
= -12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ - 22A, di/dt ≤ -205A/µs,
DS
applied and V = 0 during
GS
-24 volt V
V
≤ - 30V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2005
8
www.irf.com
相关型号：
IRHNJ598230
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
INFINEON
IRHNJ63130PBF
Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
INFINEON
IRHNJ63234SCS
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QIRL
INFINEON
©2020 ICPDF网 联系我们和版权申明