IRHNJ9130PBF [INFINEON]

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN;


型号：	IRHNJ9130PBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN 开关脉冲晶体管
文件：	总8页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 94277

RADIATION HARDENED

POWER MOSFET

IRHNJ9130

100V, P-CHANNEL

SURFACE MOUNT (SMD-0.5) RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ9130

100K Rads (Si) 0.29Ω

300K Rads (Si) 0.29Ω

-11A

IRHNJ93130

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

SMD-0.5

Features:

n Single Event Effect (SEE) Hardened

n Ultra Low RDS(on)

n Low Total Gate Charge

n Proton Tolerant

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Ceramic Package

n Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-11

= -12V, T = 100°C Continuous Drain Current

-7.0

-44

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

150

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-16

-55 to 150

Storage Temperature Range

^oC

STG

(for 5s)

Package Mounting Surface Temp.

Weight

300

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

7/12/01

IRHNJ9130

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

-100

—

=0 V, I = -1.0mA

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.11

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

-2.0

2.5

—

0.29

0.34

-4.0

—

= -12V, I = - 7.0A

GS D

DS(on)

Ω

= -12V, I = - 11A

= V , I = -1.0mA

GS(th)

Ω

S (

)

> -15V, I

= - 7.0A

-25

-250

= - 80V,V =0V

DSS

µA

—

= - 80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

-100

100

= -20V

= 20V

GSS

= -12V, I = - 11A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

= - 50V

= - 50V, I = - 11A,

= -12V, R = 7.5Ω

d(off)

Total Inductance

—

S +

Measured from the center of

drain pad to center of source pad

Input Capacitance

Output Capacitance

—

1200

310

—

= 0V, V

= - 25V

iss

oss

rss

f = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

-11

-44

-3.0

250

1.0

T = 25°C, I = - 11A, V

= 0V ➀

Reverse Recovery Time

µC

T = 25°C, I = - 11A, di/dt ≤ -100A/µs

Reverse Recovery Charge

≤ - 25V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-PC Board

—

1.67

—

thJC

thJPCB

°C/W

Soldered to 1” Sq. Copper clad Board

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHNJ9130

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100KRads(Si)

300K Rads (Si)²

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

-100

- 2.0

—

- 4.0

-100

100

-25

-100

-2.0

—

-5.0

-100

100

-25

= 0V, I = -1.0mA

GS D

DSS

= V , I = -1.0mA

DS D

GS(th)

= -20V

= 20 V

GSS

—

GSS

—

µA

=-80V, V =0V

DS GS

DSS

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-0.5)

Diode Forward Voltage

➀

—

0.3

—

0.3

Ω

= -12V, I =-7.0A

DS(on)

➀

—

0.29

-3.0

—

0.29

-3.0

Ω

= -12V, I =-7.0A

➀

= 0V, I = -11A

GS S

1. Part number IRHNJ9130

2. Part number IRHNJ93130

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS (V)

Ion

LET

Energy Range

(µm)

32.6

MeV/(mg/cm²)) (MeV)

@VGS=0V @VGS=5V

@VGS=10V

-100

-70

@VGS=15V

@VGS=20V

36.8

59.8

285

305

343

-100

-60

-100

—

-70

-50

—

-60

-40

—

-120

-100

-80

-60

-40

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNJ9130

Pre-Irradiation

100

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

VGS

TOP

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

-5.0V

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.5

-11A

T = 25 C

2.0

1.5

1.0

0.5

0.0

T = 150 C

= -50V

20µs PULSE WIDTH

=-12V

10 11

-60 -40 -20

20 40 60 80 100 120 140 160

-V , Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

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Pre-Irradiation

IRHNJ9130

2000

= 0V,

f = 1MHz

C SHORTED

= -11A

= C + C

iss

gd ,

=-80V

=-50V

=-20V

= C

rss

= C + C

oss

1500

1000

500

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

100us

1ms

T = 25 C

10ms

T = 150 C

Single Pulse

= 0 V

0.1

0.0

1.0

2.0

3.0

4.0

100

1000

-V ,Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

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IRHNJ9130

Pre-Irradiation

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

, Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNJ9130

400

300

200

100

TOP

-4.9A

D.U.T

-7.0A

BOTTOM -11A

DRIVER

V20_GV_S

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-12V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHNJ9130

Pre-Irradiation

Foot Notes:

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀➀Total Dose Irradiation with V

➀➀ Repetitive Rating; Pulse width limited by

Bias.

maximum junction temperature.

= 0 during

-12 volt V

applied and V

➀➀➀V

= -25V, starting T = 25°C, L= 2.4mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = -11A, V

= -12V

➀➀Total Dose Irradiation with V Bias.

➀➀ I

≤ -11A, di/dt ≤ -440A/µs,

= 0 during

-80 volt V

applied and V

≤ -100V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 07/01

www.irf.com

IRHNJ9130PBF [INFINEON]

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