IRHQ7214 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28); 抗辐射功率MOSFET表面贴装( LCC -28 )型号: | IRHQ7214 |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
文件: | 总8页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 93828A
IRHQ7214
250V, QUAD N-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ7214
IRHQ3214
IRHQ4214
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
2.25Ω
2.25Ω
2.25Ω
1.6A
1.6A
1.6A
1.6A
IRHQ8214 1000K Rads (Si) 2.25Ω
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
bothTotal Dose and Single Event Effects (SEE). The com-
bination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Pre-Irradiation
Absolute Maximum Ratings ( Per Die)
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
1.6
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
1.0
6.4
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
12
W
W/°C
V
D
C
Linear Derating Factor
0.1
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
62
mJ
A
AS
I
1.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.2
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/22/03
IRHQ7214
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.3
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
2.25
Ω
V
= 12V, I = 1.0A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
0.9
—
4.0
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 1.0A ➀
DS
V
DS
I
25
= 200V, V =0V
DS GS
DSS
µA
—
250
V
= 200V,
DS
= 0V, T = 125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
19
V
GS
= 20V
GSS
GSS
nA
nC
V
GS
= -20V
Q
Q
Q
= 12V, I = 1.6A,
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
3.4
7.0
15
V
DS
= 125V
t
t
t
t
V
= 125V, I = 1.6A,
DD
GS
D
7.0
39
V
= 12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
42
L
S
+ L
Total Inductance
—
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
280
70
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
18
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Unit
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.5
226
900
S
A
SM
V
V
T = 25°C, I = 1.6A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = 1.6A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V ➀
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
10.4
thJC
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀ (Per Die)
Parameter
Min
Drain-to-Source Breakdown Voltage 250
100KRads(Si)1
300K to 1000K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
—
250
1.25
—
—
4.5
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
2.0
—
—
—
—
4.0
100
-100
25
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
V
V
= 20V
GSS
GS
GS
nA
—
= -20 V
GSS
I
—
µA
V
= 200V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
2.205
—
2.205
Ω
V
GS
= 12V, I = 1.0A
D
R
DS(on)
➀
—
—
2.25
1.5
—
—
2.25
1.5
Ω
V
GS
= 12V, I = 1.0A
D
V
SD
➀
V
V
GS
= 0V, I = 1.6A
S
1. Part numbers IRHQ7214, IRHQ3214 and IRHQ4214
2. Part number IRHQ8214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
43.0
39.0
250
250
250
250
250
250
250
225
250
210
36.8
305
300
250
200
150
100
50
Cu
Br
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ7214
Pre-Irradiation
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
10
1
BOTTOM5.0V
BOTTOM 5.0V
1
5.0V
5.0V
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
1.6A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
20µs PULSE WIDTH
DS
V
GS
=12V
0.1
5
7
9
11
13
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHQ7214
20
16
12
8
600
I
D
= 1.6A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
V
V
V
= 200V
= 125V
= 50V
iss
gs
gd
gd ,
DS
DS
DS
C
= C
rss
500
400
300
200
100
0
C
= C + C
gd
oss
ds
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.4
10
100
1000
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHQ7214
Pre-Irradiation
RD
1.6
1.2
0.8
0.4
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
1
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x
Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHQ7214
150
120
90
60
30
0
I
D
TOP
0.7A
1.0A
BOTTOM 1.6A
15V
DRIVER
L
V
G
D S
D.U .T
R
.
+
V
D D
-
I
AS
V
GS
2
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ7214
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
maximum junction temperature.
GS
= 0 during
➀ V
= 50V, starting T = 25°C, L= 48mH,
J
DD
Peak I = 1.6A, V
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A
DS
= 12V
L
GS
➀ I
≤ 1.6A, di/dt ≤ 336A/µs,
≤ 250V, T ≤ 150°C
J
SD
DD
➀ Total Dose Irradiation with V Bias.
DS
applied and V = 0 during
GS
V
200 volt V
DS
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/03
8
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