IRHQ9110 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28); 抗辐射功率MOSFET表面贴装（ LCC -28 ）
| 型号： | IRHQ9110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93794C
IRHQ9110
100V, QUAD P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
MOSFET TECHNOLOGY
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ9110
100K Rads (Si)
1.1Ω
1.1Ω
-2.3A
-2.3A
IRHQ93110 300K Rads (Si)
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
bothTotal Dose and Single Event Effects (SEE). The com-
bination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Pre-Irradiation
Absolute Maximum Ratings ( Per Die)
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
-2.3
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
-1.5
-9.2
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
12
W
W/°C
V
D
C
Linear Derating Factor
0.1
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
75
mJ
A
AS
I
-2.3
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.2
mJ
V/ns
AR
dv/dt
9.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes, refer to the last page
www.irf.com
1
03/24/04
IRHQ9110
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.10
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
1.1
Ω
V
= -12V, I = -1.5A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
1.1
—
—
—
—
—
-4.0
—
V
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -1.5A ➀
DS
V
DS
I
-25
-250
= -80V, V =0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
15
V
= -20V
= 20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= -12V, I = -2.3A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.3
3.3
21
V
= -50V
DS
t
t
t
t
V
= -50V, I = -2.3A,
DD
GS
D
17
V
= -12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
32
d(off)
f
32
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
285
90
—
—
—
V
GS
= 0V, V
= -25V
iss
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
13
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-2.3
-9.2
-3.0
138
555
S
A
SM
V
V
T = 25°C, I = -2.3A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = -2.3A, di/dt ≤ 100A/µs
j
rr
RR
F
V
DD
≤ -25V ➀
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance( Per Die)
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
10.4
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
www.irf.com
Radiation Characteristics
IRHQ9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C,PostTotal Dose Irradiation ➀➀(Per Die)
Parameter
Min
Drain-to-Source Breakdown Voltage -100
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
-100
- 2.0
—
—
-5.0
-100
100
V = 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
- 2.0
—
-4.0
-100
100
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
—
—
V
GS
GSS
I
—
- 25
1.056
—
-25
µA
V
= -80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
—
—
1.056
Ω
V
= -12V, I = -1.5A
D
GS
GS
GS
R
DS(on)
➀
—
—
1.1
—
—
1.1
Ω
V
= -12V, I = -1.5A
D
V
SD
➀
-3.0
-3.0
V
V
= 0V, I = -2.3A
S
1. Part number IRHQ9110
2. Part number IRHQ93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
- 50
—
-60
-40
—
36.8
305
59.8
343
-120
-100
-80
Cu
Br
I
-60
-40
-20
0
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
www.irf.com
3
IRHQ9110
Pre-Irradiation
100
10
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
10
BOTTOM -5.0V
BOTTOM -5.0V
1
0.1
1
-5.0V
-5.0V
0.1
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 25 C
J
T = 150 C
J
0.01
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-2.3A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
0.1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHQ9110
500
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= -2.3A
GS
C
= C + C
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd ,
gd
ds
DS
DS
DS
C
= C
gd
rss
C
= C + C
400
300
200
100
0
oss ds
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
4
8
12
16
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.5
1
10
100
1000
1.0
1.5
2.0
2.5
3.0
3.5
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHQ9110
Pre-Irradiation
RD
VDS
2.5
2.0
1.5
1.0
0.5
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
P
DM
0.10
1
t
1
0.05
t
2
0.02
Notes:
1. Duty factor D = t / t
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHQ9110
200
150
100
50
L
V
I
D S
D
-1A
TOP
-1.5A
BOTTOM -2.3A
D .U .T
R
.
G
V
D D
A
I
A S
D R IV E R
V
-20V
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
.
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
-
V
-12V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ9110
Pre-Irradiation
Footnotes:
➀ Total Dose Irradiation with V
Bias.
➀ Repetitive Rating; Pulse width limited by
GS
-12 volt V
applied and V
= 0 during
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
DS
➀ V
= -50V, starting T = 25°C, L= 28.4mH,
J
DD
Peak I = -2.3A, V
= -12V
➀ Total Dose Irradiation with V
Bias.
L
GS
DS
applied and V = 0 during
GS
-80 volt V
➀ I
≤ -2.3A, di/dt ≤ -244A/µs,
≤ -100V, T ≤ 150°C
J
DS
irradiation per MlL-STD-750, method 1019, condition A
SD
DD
V
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2004
8
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