IRHSLNA57064D [INFINEON]

60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - On DBC Carrier;


型号：	IRHSLNA57064D
厂家：	Infineon
描述：	60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package - On DBC Carrier
文件：	总9页 (文件大小：2395K)
中文：	中文翻译
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PD-94401C

IRHSLNA57064

60V, N-CHANNEL

RADIATION HARDENED

SYNCHRONOUS RECTIFIER

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

Radiation Level RDS(on)

Q_G

IRHSLNA57064 100 kRads(Si)

IRHSLNA53064 300 kRads(Si)

IRHSLNA54064 600 kRads(Si)

IRHSLNA58064 1000 kRads(Si)

160nC

6.1m

SMD-2

Description

Features

 Co-Pack N-channel RAD-Hard MOSFET and

Schottky Diode

The SynchFet family of Co-Pack RAD-Hard MOSFETs

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. RAD-Hard MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with IR Hirel low forward drop Schottky

rectifiers results in an extremely efficient device suitable

for use in a wide variety of Military and Space

applications.

 Ideal for Synchronous Rectifiers in DC-DC

Converters up to 75A Output

 Low Conduction Losses

 Low Switching Losses

 Low Vf Schottky Rectifier

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Continuous Drain or Source Current

Pulsed Drain Current 

Units

I_D1@ V_GS= 12V, T_C= 25°C

I_D2@ V_GS= 12V, T_C= 100°C

I_DM@T_C= 25°C

75*

300

250

2.0

± 20

370

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy 

Avalanche Current 

I_AR

E_AR

I_F(AV) @ T_C= 25°C

I_F(AV) @ T_C= 100°C

T_J

Repetitive Avalanche Energy 

Schottky and Body Diode Avg. Forward Current 

Operating Junction and

75*

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temp.

Weight

°C

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

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IRHSLNA57064

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BV_DSS

R_DS(on)

V_GS(th)

Parameter

Min. Typ. Max. Units

Test Conditions

V_GS= 0V, I_D= 1.0mA

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– –––

6.1

4.0

V_GS= 12V, I_D= 45A 

m

2.0

–––

V_DS= V_GS, I_D= 1.0mA

Gfs

I_DSS

Forward Transconductance

––– –––

_DS= 15V, I_D= 45A 

V_DS= 48V, V_GS= 0V

_DS= 48V,V_GS= 0V,T_J=125°C

V_GS= 20V

_GS= -20V

––– –––

µA

Zero Gate Voltage Drain Current

I_GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

––– ––– 100

––– ––– -100

––– ––– 160

Q_G

Q_GS

Q_GD

t_d(on)

I_D= 45A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

––– –––

V_DS= 30V

_GS= 12V

V_DD= 30V

I_D= 45A

––– ––– 125

t_d(off)

t_f

––– –––

R_G= 2.35

_GS= 12V

Measured from center of Drain

pad to center of Source pad

Ls +L_D

Total Inductance

–––

6.6

–––

Schottky Diode and Body Diode Ratings and Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Test Conditions

––– ––– 0.93

T_J=-55°C, I_S= 45A, V_GS=0V

T_J=25°C, I_S= 45A, V_GS=0V

T_J=125°C, I_S= 45A, V_GS=0V

T_J=25°C, I_F= 45A,V_DD≤30V

di/dt = 100A/µs 

V_SD

Diode Forward Voltage

––– –––

0.9

––– ––– 0.82

––– ––– 100

––– ––– 210

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

Measured from center of drain

L_{S +}L_D

t_on

Total Inductance

––– 7.95 –––

nH pad to center of source pad

(for Schottky only)

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Forward Turn-On Time

Thermal Resistance

Symbol

Parameter

Junction-to-Case (MOSFET)

Junction-to--Case (Schottky)

Min.

Typ.

Max.

Units

R_JC

–––

0.5

°C/W

R_JC

–––

0.7

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

 Pulse width  300 µs; Duty Cycle  2%

 50% Duty Cycle, Rectangular

V_DD= 25V, starting T_J= 25°C, L = 0.13mH, Peak I_L= 75A, V_GS= 12V

Total Dose Irradiation with V_GSBias. 12 volt V_GSapplied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

 Total Dose Irradiation with V_DSBias. 48 volt V_DSapplied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

 Specified Radiation Characteristics are for Radiation Hardened MOSFET die only.

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IRHSLNA57064

Radiation Characteristics

Pre-Irradiation

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

Up to 600 kRads (Si)¹

1000 kRads (Si)²

Symbol

Parameter

Units

Test Conditions

Min.

Max.

–––

4.0

Min.

Max.

–––

4.0

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

2.0

1.5

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

–––

100

-100

–––

100

-100

µA

I_GSS

V_GS= -20V

I_DSS

V_DS= 48V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

6.1

–––

7.1

V_GS= 12V, I_D= 45A 

m

Static Drain-to-Source 

On-State Resistance (SMD-2)

R_DS(on)

V_SD

–––

6.1

1.3

–––

7.1

1.3

V_GS= 12V, I_D= 45A 

V_GS= 0V, I_S= 45A 

m

Diode Forward Voltage 

1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHLSNA54064

2. Part numbers IRHSLNA58064

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

(MeV/(mg/cm²))

@ VGS = 0V @ VGS=-5V @ VGS=-10V @ VGS =-15V @ VGS=-20V

38 ± 5%

61 ± 5%

84 ± 5%

300 ± 7.5%

330 ± 7.5%

350 ± 10%

38 ± 7.5%

31 ± 10%

28 ± 7.5%

LET=38 ± 5%

LET=61 ± 5%

LET=84 ± 5%

-5

-10

Bias VGS (V)

-15

-20

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

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IRHSLNA57064

Pre-Irradiation

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

ID = 75A

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 3. Typical Transfer Characteristics

Fig 5. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 6. Maximum Safe Operating Area

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IRHSLNA57064

Pre-Irradiation

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 7. Maximum Drain Current Vs. Case Temperature

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET

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IRHSLNA57064

Pre-Irradiation

(BR)DSS

Fig 10a. Unclamped Inductive Test Circuit

Fig 10b. Unclamped Inductive Waveforms

Fig 11b. Gate Charge Test Circuit

Fig 11a. Gate Charge Waveform

Fig 12a. Switching Time Test Circuit

Fig 12b. Switching Time Waveforms

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IRHSLNA57064

Pre-Irradiation

MOSFET Body Diode & Schottky Diode Characteristics

Fig 13. Typical Forward Voltage Drop Characterstics

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case , Schottky

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IRHSLNA57064

Pre-Irradiation

Case Outline and Dimensions — SMD-2

www.infineon.com/irhirel

Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555

Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776

San Jose, California 95134, USA Tel: +1 (408) 434-5000

Data and specifications subject to change without notice.

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IRHSLNA57064

Pre-Irradiation

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

2019-04-29

IRHSLNA57064D [INFINEON]

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