IRHSLNA58064 [INFINEON]
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2); RAD- HARD同步整流器表面贴装( SMD - 2 )型号: | IRHSLNA58064 |
厂家: | Infineon |
描述: | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
文件: | 总9页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-94401A
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57064
60V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on)
QG
IRHSLNA57064 100K Rads (Si) 6.1mΩ 160nC
IRHSLNA53064 300K Rads (Si) 6.1mΩ 160nC
IRHSLNA54064 600K Rads (Si) 6.1mΩ 160nC
IRHSLNA58064 1000K Rads (Si) 7.1mΩ 160nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications.RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area.Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
n
n
n
n
Refer to IRHSNA57064 for Lower R
DS(on)
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain or Source Current
75*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain or Source Current
75*
300
D
GS
C
I
Pulsed Drain Current ➀
DM
@ T = 25°C
P
Max. Power Dissipation
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
370
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy ➀
Schottky and Body Diode Avg. Forward Current ➀
Schottky and Body Diode Avg. Forward Current ➀
Opeating and Storage Temperature Range
25
mJ
AR
(AV)@ T = 25°C
I
F
75*
C
A
I
(AV)@ T =100°C
75*
F
C
T
T
-55 to 150
J, STG
°C
g
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/07/02
IRHSLNA57064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
60
—
—
—
—
V
V
GS
V
GS
= 0V, I = 1.0mA
D
DSS
R
mΩ
= 12V, I = 45A
DS(on)
6.1
D
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
45
—
—
—
—
—
4.0
—
V
S ( )
µA
V
= V
> 15V, I
I
= 1.0mA
= 45A
GS(th)
fs
DS
GS, D
Ω
V
DS
DS
I
50
50
V
= 48V, V =0V
DS GS
DSS
—
mA
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
100
-100
160
55
V
= 20V
GSS
GSS
GS
nA
nC
—
V
= -20V
GS
—
—
—
—
—
—
—
6.6
V
=12V, I =45A,
GS D
g
gs
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= 30V
DS
65
gd
d(on)
r
t
t
t
t
35
V
= 30V, I = 45A,
DD
GS
D
125
75
50
V
=12V, R = 2.35Ω
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
+ L
Total Inductance
—
Measured from center of drain
pad to center of source pad
nH
S
D
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
V
Diode Forward Voltage
—
—
—
—
—
—
—
—
0.93
0.9
T
T
= -55°C, I =45A, V
= 0V
= 0V
= 0V
SD
J
J
J
D
GS
V
= 25°C, I = 45A, V
D
GS
—
—
0.82
100
210
—
T
= 125°C, I =45A, V
D
GS
t
Reverse Recovery Time
nS
nC
nH
T = 25°C, I =45A, di/dt ≤ 100A/µs
j
F
V
rr
Q
Reverse Recovery Charge
—
≤ 30V
RR
DS
L
S
+ L Total Inductance
7.95
Measured from center of drain pad to
center of source pad (for Schottky only)
D
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
—
—
—
—
0.5
0.7
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHSLNA57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
➀
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
60
2.0
—
—
4.0
60
1.5
—
—
4.0
100
-100
25
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
GS
V
GS
= 20V
GSS
GSS
DSS
nA
—
—
= -20 V
—
—
µA
V
=48V, V
=0V
DS
GS
R
DS(on)
R
DS(on)
V
SD
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
➀
—
6.1
—
7.1
mΩ
V
= 12V, I =45A
D
GS
➀
—
—
6.1
1.3
—
—
7.1
1.3
mΩ
V
GS
= 12V, I =45A
D
➀
V
V
= 0V, I = 45A
GS S
1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064
2. Part number IRHSLNA58064
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
➀
Table 2. Single Event Effect Safe Operating Area
VDS (V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Ion
LET
MeV/(mg/cm2))
39.2
Energy
(MeV)
300
300
2068
Range
Kr
Xe
Au
37.4
29.2
106
60
46
35
60
46
35
60
35
27
52
25
20
34
15
14
63.3
86.6
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHSLNA57064
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
75A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
GS
=12V
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
www.irf.com
IRHSLNA57064
Pre-Irradiation
20
16
12
8
I
D
= 45A
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
4
FOR TEST CIRCUIT
5b
SEE FIGURE
150 200
0
0
50
100
250
Q , Total Gate Charge (nC)
G
Fig 5. Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
12V
Q
Q
G
+
12 V
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 5b. Gate Charge Test Circuit
Fig 5a. Basic Gate Charge Waveform
www.irf.com
5
IRHSLNA57064
Pre-Irradiation
RD
200
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
150
100
50
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 7a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 6. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 7b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
6
www.irf.com
Pre-Irradiation
IRHSLNA57064
800
600
400
200
0
I
D
TOP
33.5A
47.4A
BOTTOM 75A
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 9. Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
L
V
G
D S
D.U .T
AS
.
R
+
V
D D
-
I
A
V
2
GS
0.01
t
Ω
p
I
AS
Fig 9b. Unclamped Inductive Waveforms
Fig 9a. Unclamped Inductive Test Circuit
www.irf.com
7
IRHSLNA57064
Pre-Irradiation
MOSFET Body Diode & Schottky Diode Characteristics
100
10
1
Tj = 125°C
Tj = 25°C
Tj = -55°C
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V
(V)
SD
Fig. 10 - Typical Forward Voltage Drop Characterstics
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
8
www.irf.com
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature
IRHSLNA57064
➀ Total Dose Irradiation with V
Bias.
GS
= 0 during
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ 50% Duty Cycle, Rectangular
➀ Total Dose Irradiation with V Bias.
DS
= 0 during
48 volt V
applied and V
➀ V
= 25V, starting T = 25°C, L= 0.13 mH
J
DS
GS
DD
Peak I = 75A, V
irradiation per MlL-STD-750, method 1019, condition A.
= 12V
L
GS
➀
Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/02
www.irf.com
9
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